KR920018250A - 초크랄스키 도가니 인출에 있어서 연속적인 액상실리콘 재충전 방법 - Google Patents

초크랄스키 도가니 인출에 있어서 연속적인 액상실리콘 재충전 방법 Download PDF

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KR920018250A
KR920018250A KR1019920002933A KR920002933A KR920018250A KR 920018250 A KR920018250 A KR 920018250A KR 1019920002933 A KR1019920002933 A KR 1019920002933A KR 920002933 A KR920002933 A KR 920002933A KR 920018250 A KR920018250 A KR 920018250A
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crucible
melt
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클링 쉬른 허버트
랭 라인하트
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뢰머, 시르베
와커-헤미트로닉 게셀샤프트 퍼 엘렉트로닉-그룬도스토페 엠베하
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

내용 없음

Description

초크랄스키 도가니 인출에 있어서 연속적인 액상실리콘 재충전 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부도면 제 1도는 이 발명에 의한 실시예에 따르는 장치설명도이다.

Claims (16)

  1. 고순도의 단결정 반도체 잉곳(ingots) (3),특히 실리콘 잉곳을 보호가스하에 용융물(2)에서 제조하며, 그 용융물의 주가열구성요서(6)를 구비한 주도가니 (main crucibel) (1)와 현수시켜 회전하는 현수인출장치(pulling apparatus) (4)를 구성한 장치에 있어서, (a) 추도가니(11)가 재충전재(14)를 용융시키는 가열장치(12)와 주도가니(1)의 출구튜브(outlet tube) (13)를 구성하며, (b)고형의 재충전채(20)의 스톡콘테이너(1)가 공급장치(23)와 추가도가니(11)에 이르게 하는 피드라인(feedline) (18)을 구성하고, (c)도판트필(dopant pills) (17)의 스톡콘테이너(16)가 공급장치(feed mechanism) (22)와 추가도가니(11)에 이르게 하는 피드라인(15)를 구성함을 특징으로 하는 상기 장치.
  2. 제1항에 있어서, 그 용융물의 주도가니(1)는 두 부분으로 분리시켜 결정화 프로세스가 하나의 체임버(chanmber)내에서 발생하도록 함과 동시에, 재충전 용융재가 용융물의 통과구멍에 의해 제1체임버(first chamber)에 접속된 타체임버로 공급됨을 특징으로 하는 상기 장치.
  3. 제2항에 있어서, 상기 주도가니(1)는 통과구멍이 있는 링형상 간막이(ring-shaped partition) (29)에 의해 구분(subdivizion)시킴을 특징으로 하는 상기 장치.
  4. 제1항에 있어서, 상기 추가도가니(11)는 그 하부단에서 모세관(30)으로 용융물이 배출되도록 함을 특징으로 하는 상기 장치.
  5. 제4항에 있어서, 상기 모세관의 격경은 0.1-4mm임을 특징으로 하는 상기 장치.
  6. 제1항에 있어서, 상기 추가도가니(11)의 출구튜브(13)는 주도가니(1)내에 있는 용융물(2)에 침지시켜 구성함을 특징으로 하는 상기 장치.
  7. 제1항에 있어서, 상기 주도가니(1)는 깊이가 얕은 도가니로 구성함을 특징으로 하는 상기 장치.
  8. 제1항에 있어서, 상기 추도가니(11)는 석영(quartz)으로 제조시켜 구성함을 특징으로 하는 상기 장치.
  9. 제1항에 있어서, 상기 공급장치(23)는 계량장치(24)를 구성함을 특징으로 하는 상기 장치.
  10. 제1항에 있어서, 상기 스톡콘테이너(16), 공급장치(23) 및 추가도가니(11)는 그 주위와 그 주도가니(1)에서 기밀하게 그리고 분진이 누출되지 않게 분리되어 있음을 특징으로 하는 상기 장치.
  11. 제1항에 있어서, 상기 추가도가니(11), 스톡콘테이너(16) 및 공급장치(23)는 압력이 주도가니에서의 압력보다 낮은 보호가스를 사용하여 공급함을 특징으로 하는 상기 장치.
  12. 청구범위 제1항 내지 제11항의 어느 한항 또는 그 이상의 장치를 사용하여 고순도의 단결정실리콘 양곳의 도가니인출방법에 있어서, (a)추가도가니에서 액상형태로 인출프로세스(pulling process)를 밟을 때 주도가니 내에서의 실리콘양을 재충전시켜 주도가니의 용용물 양을 일정하게 유지하며, (b)스톡콘테이너의 고형의 반도체 재료, 특히 실리콘재를 추가도가니로 재충전시켜 용융시킴을 특징으로 하는 상기 방법.
  13. 제12항에 있어서, 상기 스톡콘테이너, 공급장치 및 추가도가니를 통하여 흐르는 보호가스 스트립에 의해 불순물을 그 시스템에서 제거함을 특징으로 하는 상기 장치.
  14. 제12항에 있어서, 상기 주도가니에서의 도판트(dopant)농도는 상기 추가도가니에서 고형도판트재를 재충전시켜 용융시킴으로써 유지시킴을 특징으로 하는 상기 장치.
  15. 제12항에 있어서, 상기 추가도가니의 모세관내에 있는 용융물의 점도에 의해 재충전재 양을 조절함을 특징으로 하는 상기 장치.
  16. 제15항에 있어서, 상기 재충전재 양은 스톡콘테이너에서 고형의 다결정정재를 첨가시켜 조절함을 특징으로 하는 상기 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920002933A 1991-03-01 1992-02-25 초크랄스키 도가니 인출에 있어서 연속적인 액상실리콘 재충전 방법 KR950003431B1 (ko)

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DE4106589.1 1991-03-01
DE91-4106589.1 1991-03-01
DE4106589A DE4106589C2 (de) 1991-03-01 1991-03-01 Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski

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IT (1) IT1254290B (ko)

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JPH05105576A (ja) 1993-04-27
DE4106589C2 (de) 1997-04-24
DE4106589A1 (de) 1992-09-03
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