IT1254290B - Procedimento per il caricamento successivo in continuo con silicio liquido nel tiraggio da crogiolo secondo czochralski. - Google Patents

Procedimento per il caricamento successivo in continuo con silicio liquido nel tiraggio da crogiolo secondo czochralski.

Info

Publication number
IT1254290B
IT1254290B ITRM920065A ITRM920065A IT1254290B IT 1254290 B IT1254290 B IT 1254290B IT RM920065 A ITRM920065 A IT RM920065A IT RM920065 A ITRM920065 A IT RM920065A IT 1254290 B IT1254290 B IT 1254290B
Authority
IT
Italy
Prior art keywords
crucible
czochralski
draft
loading procedure
liquid silicon
Prior art date
Application number
ITRM920065A
Other languages
English (en)
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of ITRM920065A0 publication Critical patent/ITRM920065A0/it
Publication of ITRM920065A1 publication Critical patent/ITRM920065A1/it
Application granted granted Critical
Publication of IT1254290B publication Critical patent/IT1254290B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Nel tiraggio da crogiolo di lingotti di cristalli secondo Czochralski, in modo particolare di quelli da silicio e con diametri dei cristalli particolarmente grandi, il grado di riempimento del crogiolo viene tenuto durante il processo del tiraggio approssimativamente costante mediante aggiunta in continuo di materiale di caricamento successivo solido oppure liquido. Gli svantaggi noti di inconvenienti termici e della introduzione di impurezze e particelle vengono superati secondo l'invenzione mediante un sistema di caricamento successivo chiuso a tenuta di gas, costituito da crogiolo (11) di addizione, con tenitore di scorta per materiale (19) dei semiconduttori e materiale (16) drogante con le corrispondenti tubazioni di trasporto e con una tubazione per il gas di scarico. Il procedimento consente inoltre un caricamento successivo regolabile e separato di materiale drogante attraverso il crogiolo di addizione.
ITRM920065A 1991-03-01 1992-01-30 Procedimento per il caricamento successivo in continuo con silicio liquido nel tiraggio da crogiolo secondo czochralski. IT1254290B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4106589A DE4106589C2 (de) 1991-03-01 1991-03-01 Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski

Publications (3)

Publication Number Publication Date
ITRM920065A0 ITRM920065A0 (it) 1992-01-30
ITRM920065A1 ITRM920065A1 (it) 1993-07-30
IT1254290B true IT1254290B (it) 1995-09-14

Family

ID=6426266

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM920065A IT1254290B (it) 1991-03-01 1992-01-30 Procedimento per il caricamento successivo in continuo con silicio liquido nel tiraggio da crogiolo secondo czochralski.

Country Status (5)

Country Link
US (2) US5242531A (it)
JP (1) JPH0676273B2 (it)
KR (1) KR950003431B1 (it)
DE (1) DE4106589C2 (it)
IT (1) IT1254290B (it)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5427056A (en) * 1990-10-17 1995-06-27 Komatsu Electronic Metals Co., Ltd. Apparatus and method for producing single crystal
JPH085737B2 (ja) * 1990-10-17 1996-01-24 コマツ電子金属株式会社 半導体単結晶製造装置
JP2506525B2 (ja) * 1992-01-30 1996-06-12 信越半導体株式会社 シリコン単結晶の製造方法
DE4218123C2 (de) * 1992-06-02 1996-05-02 Leybold Ag Vorrichtung für die kontinuierliche Zuführung von Chargengut für einen Schmelztiegel und deren Verwendung
DE4318184A1 (de) * 1993-06-01 1994-12-08 Wacker Chemitronic Verfahren und Vorrichtung zum Ziehen von Einkristallen
DE4328982C2 (de) * 1993-08-28 1996-02-01 Leybold Ag Verfahren zum Regeln eines Mengenstromes von Partikeln zu einem Schmelztiegel und Regelanordnung zur Durchführung des Verfahrens
JPH08119787A (ja) * 1994-10-14 1996-05-14 Komatsu Electron Metals Co Ltd 連続チャージ法におけるドーパント供給方法およびドーパント組成物
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5553566A (en) * 1995-06-22 1996-09-10 Motorola Inc. Method of eliminating dislocations and lowering lattice strain for highly doped N+ substrates
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
DE19538020A1 (de) * 1995-10-12 1997-04-17 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium
TW503265B (en) * 1995-12-28 2002-09-21 Mitsubishi Material Silicon Single crystal pulling apparatus
US5814148A (en) 1996-02-01 1998-09-29 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
JP3594155B2 (ja) * 1996-03-21 2004-11-24 信越半導体株式会社 シリコン単結晶引上げ装置における粒状原料の供給方法及び供給装置
US6059876A (en) * 1997-02-06 2000-05-09 William H. Robinson Method and apparatus for growing crystals
US5993902A (en) * 1997-04-09 1999-11-30 Seh America, Inc. Apparatus and method for extending the lifetime of an exhaust sleeve for growing single crystal silicon by silicon nitride (SI3 N4) coating
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
DE19882384T1 (de) * 1998-03-12 2000-07-27 Super Silicon Crystal Res Inst Zusatzschmelzvorrichtung für einkristallines Material und Verfahren zum Schmelzen von einkristallinem Material
JPH11255588A (ja) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 単結晶原料供給装置及び単結晶原料供給方法
DE19813452A1 (de) * 1998-03-26 1999-09-30 Leybold Systems Gmbh Kristall-Ziehanlage
DE19813453A1 (de) * 1998-03-26 1999-09-30 Leybold Systems Gmbh Kristall-Ziehanlage
US20010031229A1 (en) * 1998-10-20 2001-10-18 Spjut Reed E. UV-enhanced, in-line, infrared phosphorous diffusion furnace
US6284040B1 (en) * 1999-01-13 2001-09-04 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
US6330388B1 (en) 1999-01-27 2001-12-11 Northstar Photonics, Inc. Method and apparatus for waveguide optics and devices
US6179914B1 (en) 1999-02-02 2001-01-30 Seh America, Inc. Dopant delivery system and method
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
US6312517B1 (en) * 2000-05-11 2001-11-06 Memc Electronic Materials, Inc. Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
US20020085270A1 (en) * 2000-11-27 2002-07-04 Bendett Mark P. Apparatus and method for integrated photonic devices having add/drop ports and gain
WO2003027362A1 (en) * 2001-09-28 2003-04-03 Memc Electronic Materials, Inc. Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder
KR100423753B1 (ko) * 2001-11-30 2004-03-22 주식회사 실트론 실리콘 잉곳 성장을 위한 실리콘 융액 형성방법
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US6813405B1 (en) * 2002-03-29 2004-11-02 Teem Photonics Compact apparatus and method for integrated photonic devices having folded directional couplers
US20030185514A1 (en) * 2002-03-29 2003-10-02 Bendett Mark P. Method and apparatus for tapping a waveguide on a substrate
US20030196455A1 (en) * 2002-04-17 2003-10-23 Mccov Michael A. Apparatus and method for photonic waveguide fabrication
KR100987470B1 (ko) * 2002-04-24 2010-10-13 신에쯔 한도타이 가부시키가이샤 실리콘 단결정의 제조방법 및 실리콘 단결정과 실리콘웨이퍼
KR100487395B1 (ko) * 2002-07-22 2005-05-03 엘지전자 주식회사 레이저 매질 성장 장치 및 방법
JP4148049B2 (ja) * 2003-07-15 2008-09-10 株式会社Ｓｕｍｃｏ 原料供給装置
US20050056960A1 (en) * 2003-09-16 2005-03-17 Eastman Kodak Company Forming homogeneous mixtures of organic materials for physical vapor deposition using melting
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
US7166845B1 (en) 2004-01-09 2007-01-23 Crystal Photonics, Incorporated Method of enhancing performance of cerium doped lutetium yttrium orthosilicate crystals and crystals produced thereby
US7151261B2 (en) * 2004-01-09 2006-12-19 Crystal Photonics, Incorporated Method of enhancing performance of cerium doped lutetium orthosilicate crystals and crystals produced thereby
EP1577954A1 (de) * 2004-03-09 2005-09-21 RWE SCHOTT Solar GmbH Verfahren zur Förderung von Feststoffpartikeln
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7291222B2 (en) * 2004-06-18 2007-11-06 Memc Electronic Materials, Inc. Systems and methods for measuring and reducing dust in granular material
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
WO2006009802A2 (en) * 2004-06-18 2006-01-26 Memc Electronic Materials, Inc. A melter assembly and method for charging a crystal forming apparatus with molten source material
WO2006028868A2 (en) * 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
TWI291185B (en) 2005-01-17 2007-12-11 Honda Motor Co Ltd Bobbinless coil and method of manufacturing the same
JP2006315869A (ja) * 2005-05-10 2006-11-24 Sumco Corp 窒素ドープシリコン単結晶の製造方法
US20070056504A1 (en) * 2005-09-12 2007-03-15 Rexor Corporation Method and apparatus to produce single crystal ingot of uniform axial resistivity
JP5486190B2 (ja) * 2006-01-20 2014-05-07 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション 光電変換用単結晶成型シリコンおよび単結晶成型シリコン本体の製造方法および装置
JP5103194B2 (ja) * 2007-01-15 2012-12-19 シャープ株式会社 固体原料投入装置、融液原料供給装置および結晶製造装置
WO2008087949A1 (ja) * 2007-01-15 2008-07-24 Sharp Kabushiki Kaisha 固体原料供給装置、融液原料供給装置および結晶製造装置
JP5061728B2 (ja) * 2007-05-30 2012-10-31 信越半導体株式会社 シリコン単結晶の育成方法
US20100203350A1 (en) * 2007-07-20 2010-08-12 Bp Corporation Noth America Inc. Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals
WO2009014957A2 (en) * 2007-07-20 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
JP4800292B2 (ja) * 2007-12-26 2011-10-26 シャープ株式会社 融解装置
US7855087B2 (en) * 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
JP2009263178A (ja) * 2008-04-25 2009-11-12 Sumco Corp 単結晶育成装置および原料供給方法
JP5270996B2 (ja) * 2008-07-30 2013-08-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP5163386B2 (ja) * 2008-09-17 2013-03-13 株式会社Ｓｕｍｃｏ シリコン融液形成装置
FR2940806B1 (fr) * 2009-01-05 2011-04-08 Commissariat Energie Atomique Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation
JP5196438B2 (ja) * 2009-01-20 2013-05-15 シャープ株式会社 原料融液供給装置、多結晶体または単結晶体の製造装置および製造方法
DE102009021003A1 (de) * 2009-05-12 2010-11-18 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zur Bereitstellung flüssigen Siliziums
JP2011162367A (ja) * 2010-02-05 2011-08-25 Siltronic Japan Corp チョクラルスキー法による無転位単結晶シリコンの製造方法
US8652257B2 (en) 2010-02-22 2014-02-18 Lev George Eidelman Controlled gravity feeding czochralski apparatus with on the way melting raw material
MY159737A (en) * 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
MY173316A (en) * 2011-04-14 2020-01-15 Gtat Ip Holding Llc Silicon ingot having uniform multiple dopants and method and apparats for producing same
US10202704B2 (en) * 2011-04-20 2019-02-12 Gtat Ip Holding Llc Side feed system for Czochralski growth of silicon ingots
CN102418140A (zh) * 2011-12-09 2012-04-18 曾泽斌 硅熔体连续加注的直拉硅单晶生长炉及其方法
KR101483693B1 (ko) * 2012-04-05 2015-01-19 한국에너지기술연구원 실리콘 기판 제조 장치
JP5780211B2 (ja) * 2012-06-13 2015-09-16 信越半導体株式会社 単結晶育成装置
US9945048B2 (en) 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
CN103849927A (zh) * 2012-11-30 2014-06-11 有研半导体材料股份有限公司 一种直拉法生长低电阻率单晶硅用掺杂装置及掺杂方法
JP2016501824A (ja) * 2012-12-21 2016-01-21 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ ドーパントを投入し注入するためのドーパント漏斗
CN105008595B (zh) 2012-12-31 2018-04-13 Memc电子材料有限公司 通过直拉法制造铟掺杂硅
CN105026622B (zh) * 2012-12-31 2018-02-02 Memc电子材料有限公司 用于单晶半导体材料的受控掺杂的液体掺杂系统和方法
KR101437488B1 (ko) * 2013-05-16 2014-09-03 (주)에스테크 잉곳 원료 공급시스템
WO2014195980A1 (en) * 2013-06-07 2014-12-11 Memc Electronic Materials S.P.A. Dopant feeding device for dispensing dopant
US20150176151A1 (en) * 2013-12-20 2015-06-25 Energy Materials Research, LLC System and method for forming a silicon wafer
KR20150106204A (ko) 2014-03-11 2015-09-21 (주)기술과가치 잉곳 제조 장치
KR20150107540A (ko) 2014-03-14 2015-09-23 (주)기술과가치 잉곳 제조 장치
CN104264229B (zh) * 2014-10-09 2016-08-24 河北晶龙阳光设备有限公司 一种单晶炉在线掺杂装置
US10337118B2 (en) 2014-11-26 2019-07-02 Corner Star Limited Apparatus and method for doping a semiconductor melt comprising a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck between a first and second end of the apparatus
US10443148B2 (en) * 2015-03-10 2019-10-15 Globalwafers Co., Ltd. Methods for controlled doping of a melt including introducing liquid dopant below a surface of the melt
KR101722030B1 (ko) 2015-05-29 2017-04-03 주식회사 대진기계 잉곳 성장기용 리차저
US9815003B2 (en) * 2015-09-28 2017-11-14 Wacker Chemical Corporation Silicone defoamer compositions
JP6540592B2 (ja) * 2016-05-09 2019-07-10 株式会社Sumco 原料チャージ補助具及びこれを用いたチャージ管へのシリコン原料のチャージ方法並びにシリコン単結晶の製造方法
CN106012010A (zh) * 2016-08-15 2016-10-12 江苏协鑫硅材料科技发展有限公司 一种二次添加掺杂剂的方法和装置
CN108360063A (zh) * 2018-05-04 2018-08-03 蒋国庆 连续拉晶单晶炉
KR102271455B1 (ko) * 2020-09-24 2021-07-01 한화솔루션 주식회사 주 도가니로 공급되는 실리콘을 예비 용융시키기 위한 예비 용융 장치 및 그 제어방법
KR102271709B1 (ko) * 2020-10-07 2021-07-01 한화솔루션 주식회사 실리콘 잉곳 연속 성장기의 흡배기 장치
CN112981528B (zh) * 2021-03-17 2023-01-17 大连欣和重工有限公司 一种相互补料的单晶炉及其使用方法
CN113061978A (zh) * 2021-03-22 2021-07-02 上海引万光电科技有限公司 一种用于连续直拉单晶的熔融硅加料器
CN113818074A (zh) * 2021-08-24 2021-12-21 包头美科硅能源有限公司 颗粒硅直接用于ccz直拉法制备单晶硅的装置及其方法
KR102516630B1 (ko) * 2021-10-18 2023-03-30 한화솔루션 주식회사 잉곳 성장 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
NL8005312A (nl) * 1980-09-24 1982-04-16 Philips Nv Werkwijze voor het vervaardigen van ferriet eenkristallen.
US4410494A (en) * 1981-04-13 1983-10-18 Siltec Corporation Apparatus for controlling flow of molten material between crystal growth furnaces and a replenishment crucible
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
US4547258A (en) * 1982-12-22 1985-10-15 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS6270291A (ja) * 1985-09-19 1987-03-31 Toshiba Corp ＧａＡｓ単結晶の製造方法及び装置
WO1987002718A1 (en) * 1985-11-01 1987-05-07 Nippon Kokan Kabushiki Kaisha Apparatus for producing semiconductor single crystal
FR2592064B1 (fr) * 1985-12-23 1988-02-12 Elf Aquitaine Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal

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JPH05105576A (ja) 1993-04-27
DE4106589C2 (de) 1997-04-24
US5324488A (en) 1994-06-28
JPH0676273B2 (ja) 1994-09-28
DE4106589A1 (de) 1992-09-03
KR950003431B1 (ko) 1995-04-12
ITRM920065A1 (it) 1993-07-30
ITRM920065A0 (it) 1992-01-30
US5242531A (en) 1993-09-07
KR920018250A (ko) 1992-10-21

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