FR2374951A1 - Dispositif perfectionne de purification par fusion de zone - Google Patents

Dispositif perfectionne de purification par fusion de zone

Info

Publication number
FR2374951A1
FR2374951A1 FR7739115A FR7739115A FR2374951A1 FR 2374951 A1 FR2374951 A1 FR 2374951A1 FR 7739115 A FR7739115 A FR 7739115A FR 7739115 A FR7739115 A FR 7739115A FR 2374951 A1 FR2374951 A1 FR 2374951A1
Authority
FR
France
Prior art keywords
bellows
holder
semiconductor
chamber
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7739115A
Other languages
English (en)
Other versions
FR2374951B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/754,155 external-priority patent/US4045181A/en
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of FR2374951A1 publication Critical patent/FR2374951A1/fr
Application granted granted Critical
Publication of FR2374951B1 publication Critical patent/FR2374951B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S403/00—Joints and connections
    • Y10S403/01—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Silicon Compounds (AREA)

Abstract

Dispositif de purification par fusion de zone de barreaux semiconducteurs polycristallins permettant de produire des barreaux semiconducteurs monocristallins. Le dispositif comprend une chambre de chauffage par induction 16 dont la dimension longitudinale est indépendante de la longueur du barreau semiconducteur à traiter. Un premier soufflet et un second soufflet étant étanches au gaz 36 et 51 entourent le support de barreau et le support de germe. La base du support de barreau ou du support de germe comporte un joint à fluide magnétique étanche au gaz de façon à assurer un joint dynamique entre la chambre et le moyen d'entraînement Ces soufflets se dilatent et se contractent par suite du mouvement relatif du support du barreau et du support de germe par rapport à la chambre de chauffage, et peuvent être détachés de la chambre de façon à faciliter le montage et l'extraction des barreaux semiconducteurs. De façon à protéger les soufflets du semiconducteur fondu, plusieurs cylindres télescopiques métalliques sont placés à l'intérieur du second soufflet Application aux dispositifs de purification par fusion de zone de barreaux semiconducteurs polycristallins.
FR7739115A 1976-12-27 1977-12-23 Dispositif perfectionne de purification par fusion de zone Granted FR2374951A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/754,155 US4045181A (en) 1976-12-27 1976-12-27 Apparatus for zone refining
US05/806,139 US4201746A (en) 1976-12-27 1977-06-13 Apparatus for zone refining

Publications (2)

Publication Number Publication Date
FR2374951A1 true FR2374951A1 (fr) 1978-07-21
FR2374951B1 FR2374951B1 (fr) 1980-07-25

Family

ID=27115881

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739115A Granted FR2374951A1 (fr) 1976-12-27 1977-12-23 Dispositif perfectionne de purification par fusion de zone

Country Status (7)

Country Link
US (1) US4201746A (fr)
BE (1) BE862259A (fr)
CA (1) CA1101316A (fr)
DE (1) DE2757772A1 (fr)
DK (1) DK578177A (fr)
FR (1) FR2374951A1 (fr)
GB (1) GB1575670A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3421538A1 (de) * 1984-06-08 1985-12-12 ATOMIKA Technische Physik GmbH, 8000 München Vakuumaufdampfeinrichtung
US4803563A (en) * 1987-09-02 1989-02-07 Westinghouse Electric Corp. Rotor-in-stator examination magnetic carriage and positioning apparatus
US5205997A (en) * 1989-07-31 1993-04-27 Grumman Aerospace Corporation Ampoule for crystal growth
JP3850500B2 (ja) * 1996-12-06 2006-11-29 コマツ電子金属株式会社 磁場印加単結晶引上げ装置用種結晶保持器
JP3785782B2 (ja) * 1998-01-27 2006-06-14 住友電気工業株式会社 ガラスロッド延伸用加熱炉及びガラスロッドの延伸方法
US6147149A (en) * 1999-03-03 2000-11-14 Glouster Co., Inc. Adhesive caulking material which can mimic the appearance of a multicolored stone surface
US11434163B2 (en) * 2017-12-20 2022-09-06 Heraeus Quartz North America Llc Variable diameter seal for optical preform furnace

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3291570A (en) * 1963-10-22 1966-12-13 Siemens Ag Apparatus for crucible-free zone melting of crystalline rods, particularly of semiconductor rods
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
DE1519871A1 (de) * 1965-05-27 1970-02-26 Siemens Ag Verfahren zum Zonenschmelzen eines kristallinen Stabes und Vorrichtung zur Durchfuehrung dieses Verfahrens
US3679370A (en) * 1970-07-31 1972-07-25 Western Electric Co Crystal grower with expandable chamber
US3953281A (en) * 1974-06-27 1976-04-27 International Business Machines Corporation Method and system for growing monocrystalline ingots

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2557140A (en) * 1948-12-23 1951-06-19 Razdowitz Adolph Rotary joint
SU146090A1 (ru) * 1960-08-29 1961-11-30 М.Г. Лозинский Устройство дл безокислительного напылени реплик
US3151695A (en) * 1962-05-02 1964-10-06 Mack Trucks Air cleaner seal for tilt cab vehicles
US3240341A (en) * 1963-01-14 1966-03-15 Rosaen Filter Co Magnetized gasket assembly
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
US3558281A (en) * 1968-07-11 1971-01-26 Texas Instruments Inc Apparatus for minimizing stress in a heated semiconductor filament
DE2455173C3 (de) * 1974-11-21 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3291570A (en) * 1963-10-22 1966-12-13 Siemens Ag Apparatus for crucible-free zone melting of crystalline rods, particularly of semiconductor rods
DE1519871A1 (de) * 1965-05-27 1970-02-26 Siemens Ag Verfahren zum Zonenschmelzen eines kristallinen Stabes und Vorrichtung zur Durchfuehrung dieses Verfahrens
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
US3679370A (en) * 1970-07-31 1972-07-25 Western Electric Co Crystal grower with expandable chamber
US3953281A (en) * 1974-06-27 1976-04-27 International Business Machines Corporation Method and system for growing monocrystalline ingots

Also Published As

Publication number Publication date
FR2374951B1 (fr) 1980-07-25
DK578177A (da) 1978-06-27
US4201746A (en) 1980-05-06
GB1575670A (en) 1980-09-24
DE2757772A1 (de) 1978-06-29
BE862259A (fr) 1978-06-23
CA1101316A (fr) 1981-05-19

Similar Documents

Publication Publication Date Title
IT1254290B (it) Procedimento per il caricamento successivo in continuo con silicio liquido nel tiraggio da crogiolo secondo czochralski.
FR2374951A1 (fr) Dispositif perfectionne de purification par fusion de zone
EA199900716A1 (ru) Способ и устройство для соединения труб на нефтяных месторождениях
FR2456319A1 (fr) Procede de pyrolyse d'un echantillon et four a pyrolyse correspondant
FR2626290B1 (fr) Procedes et dispositifs permettant de traiter thermiquement des fils d'acier au carbone de facon a obtenir une structure perlitique fine
BE775422A (fr) Procede pour le degagement de gaz epures a une temperature moderee et generateur de gaz l'appliquant
US4000716A (en) Epitaxial growth device
FR2452473A1 (fr) Procede et appareillage pour la fluoration continue du carbone par reaction solide-gaz
FR2355261A1 (fr) Four continu a atmosphere controlee et procede de traitement thermique
US5736096A (en) Apparatus for purifying metal
KR870002279A (ko) 야금용 용기에 장치된 가스 순환블록(block)의 조립방법
DE69703604D1 (de) Warmkammer-Druckgiessmaschine für Aluminium und Aluminiumlegierungen
KR880001323A (ko) 기체에서 먼지를 수집하는 장치
OA07156A (fr) Procédé cryogénique pour l'enlèvement des gaz acides de mélanges de gaz qui les contiennent.
FR2294378A1 (fr) Structure de tuyau " sans couture " permeable aux gaz, son procede de fabrication et appareil pour la mise en oeuvre dudit procede
US3370119A (en) Hollow electrode for arc furnaces
US3060123A (en) Method of processing semiconductive materials
ATE180194T1 (de) Giessrohr für metall und verfahren zu seiner herstellung
FR1313195A (fr) Procédé de soudage à l'arc sous pression gazeuse et dispositif pour la mise en oeuvre du procédé
US4092124A (en) Apparatus for floating melt zone processing of a semiconductor rod
KR950031349A (ko) 용접 장치
KR910011366A (ko) 야금용기용 주입관 결합장치
FR2292809A1 (fr) Procede de fixation demontable de bagues d'appui en acier pour boulons d'ajustement pour le raccordement des tubes de forage
FR2387844A1 (fr) Propulseur encastrable dans la paroi laterale verticale immergee d'un iceberg tabulaire et son procede de mise en place
CN215887315U (zh) 一种液态镓在真空状态下的凝固装置

Legal Events

Date Code Title Description
ST Notification of lapse