WO2008087949A1 - 固体原料供給装置、融液原料供給装置および結晶製造装置 - Google Patents

固体原料供給装置、融液原料供給装置および結晶製造装置 Download PDF

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Publication number
WO2008087949A1
WO2008087949A1 PCT/JP2008/050379 JP2008050379W WO2008087949A1 WO 2008087949 A1 WO2008087949 A1 WO 2008087949A1 JP 2008050379 W JP2008050379 W JP 2008050379W WO 2008087949 A1 WO2008087949 A1 WO 2008087949A1
Authority
WO
WIPO (PCT)
Prior art keywords
raw material
supply device
solid raw
material supply
production apparatus
Prior art date
Application number
PCT/JP2008/050379
Other languages
English (en)
French (fr)
Inventor
Takashi Yoshinuma
Kazuki Ohki
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008002637A external-priority patent/JP5103194B2/ja
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008087949A1 publication Critical patent/WO2008087949A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　本発明は、塊状の固体原料が坩堝に投入されるときに発生するスプラッシュを抑制するとともに、発生したスプラッシュの飛散を抑制することができる固体原料投入装置に関し、前記固体原料投入装置を含んで構成される融液原料供給装置および結晶製造装置に関する。塊状の固体原料４を副坩堝２１の開口に向けて案内して供給する案内部材１と、固体原料４を案内部材１に供給する固体原料供給部３と、飛散防止部材２とを含む固体原料投入装置１０とする。また固体原料投入装置１０を備える融液原料供給装置２０，３０および結晶製造装置１００とする。
PCT/JP2008/050379 2007-01-15 2008-01-15 固体原料供給装置、融液原料供給装置および結晶製造装置 WO2008087949A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007006372 2007-01-15
JP2007-006372 2007-01-15
JP2008002637A JP5103194B2 (ja) 2007-01-15 2008-01-09 固体原料投入装置、融液原料供給装置および結晶製造装置
JP2008-002637 2008-01-09

Publications (1)

Publication Number Publication Date
WO2008087949A1 true WO2008087949A1 (ja) 2008-07-24

Family

ID=39635953

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050379 WO2008087949A1 (ja) 2007-01-15 2008-01-15 固体原料供給装置、融液原料供給装置および結晶製造装置

Country Status (1)

Country Link
WO (1) WO2008087949A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018514496A (ja) * 2015-04-29 2018-06-07 １３６６ テクノロジーズ インク． 材料が消費及び補給される溶融材料の含有体積を維持する方法
CN114250504A (zh) * 2020-09-24 2022-03-29 韩华思路信 用于预熔向主坩埚供给的硅的预熔装置及其控制方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258080A (en) * 1975-11-06 1977-05-13 Siltec Corp Continuous semiconductor crystal growth apparatus
JPS6136197A (ja) * 1984-07-06 1986-02-20 ゼネラル　シグナル　コーポレーシヨン チヨクラルスキー技術を用いて浅いるつぼから半導体材料の単結晶を成長させる装置及び方法
JPH0312387A (ja) * 1989-06-07 1991-01-21 Nkk Corp シリコン単結結晶の製造方法および製造装置
JPH03290392A (ja) * 1990-04-03 1991-12-20 Nkk Corp 単結晶製造装置
JPH05105576A (ja) * 1991-03-01 1993-04-27 Wacker Chemitronic Ges Elektron Grundstoffe Mbh チヨクラルスキーによるるつぼ引上げ操作時液体シリコンを連続的に追加装填する方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258080A (en) * 1975-11-06 1977-05-13 Siltec Corp Continuous semiconductor crystal growth apparatus
JPS6136197A (ja) * 1984-07-06 1986-02-20 ゼネラル　シグナル　コーポレーシヨン チヨクラルスキー技術を用いて浅いるつぼから半導体材料の単結晶を成長させる装置及び方法
JPH0312387A (ja) * 1989-06-07 1991-01-21 Nkk Corp シリコン単結結晶の製造方法および製造装置
JPH03290392A (ja) * 1990-04-03 1991-12-20 Nkk Corp 単結晶製造装置
JPH05105576A (ja) * 1991-03-01 1993-04-27 Wacker Chemitronic Ges Elektron Grundstoffe Mbh チヨクラルスキーによるるつぼ引上げ操作時液体シリコンを連続的に追加装填する方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018514496A (ja) * 2015-04-29 2018-06-07 １３６６ テクノロジーズ インク． 材料が消費及び補給される溶融材料の含有体積を維持する方法
EP3289116A4 (en) * 2015-04-29 2019-01-16 1366 Technologies Inc. METHOD FOR MAINTAINING A VOLUME CONTENT OF MATERIAL MADE FROM WHICH THE MATERIAL IS EXHAUSTED AND REPLENISHED
US10633765B2 (en) 2015-04-29 2020-04-28 1366 Technologies, Inc. Method for maintaining contained volume of molten material from which material is depleted and replenished
CN114250504A (zh) * 2020-09-24 2022-03-29 韩华思路信 用于预熔向主坩埚供给的硅的预熔装置及其控制方法

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