CN103849927A - 一种直拉法生长低电阻率单晶硅用掺杂装置及掺杂方法 - Google Patents
一种直拉法生长低电阻率单晶硅用掺杂装置及掺杂方法 Download PDFInfo
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- CN103849927A CN103849927A CN201210505550.XA CN201210505550A CN103849927A CN 103849927 A CN103849927 A CN 103849927A CN 201210505550 A CN201210505550 A CN 201210505550A CN 103849927 A CN103849927 A CN 103849927A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 139
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 238000007599 discharging Methods 0.000 claims abstract description 46
- 239000002019 doping agent Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 230000003467 diminishing effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 description 18
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 18
- 239000010453 quartz Substances 0.000 description 15
- 101150038956 cup-4 gene Proteins 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- LULLIKNODDLMDQ-UHFFFAOYSA-N arsenic(3+) Chemical compound [As+3] LULLIKNODDLMDQ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
晶体编号 | A头(mΩ.cm) | B头(mΩ.cm) | C头(mΩ.cm) | C尾(mΩ.cm) |
晶体1 | 4.82 | 4.05 | 3.37 | 2.72 |
晶体2 | 4.21 | 3.63 | 2.97 | 2.42 |
晶体3 | 4.15 | 3.51 | 2.89 | 2.31 |
Claims (7)
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CN201210505550.XA CN103849927A (zh) | 2012-11-30 | 2012-11-30 | 一种直拉法生长低电阻率单晶硅用掺杂装置及掺杂方法 |
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CN201210505550.XA CN103849927A (zh) | 2012-11-30 | 2012-11-30 | 一种直拉法生长低电阻率单晶硅用掺杂装置及掺杂方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI575123B (zh) * | 2015-10-12 | 2017-03-21 | 環球晶圓股份有限公司 | 摻雜器、長晶爐以及使用長晶爐的方法 |
CN108796603A (zh) * | 2018-08-29 | 2018-11-13 | 内蒙古中环协鑫光伏材料有限公司 | 一种直拉单晶补掺合金的工艺方法 |
CN111364098A (zh) * | 2018-12-26 | 2020-07-03 | 有研半导体材料有限公司 | 一种用于重掺直拉单晶的掺杂装置 |
CN113584574A (zh) * | 2021-08-02 | 2021-11-02 | 宁夏中欣晶圆半导体科技有限公司 | 固相掺杂方法、装置、重掺砷硅单晶生产系统及生产方法 |
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CN1056135A (zh) * | 1990-04-13 | 1991-11-13 | 日本钢管株式会社 | 单晶硅生产设备 |
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JPH08295591A (ja) * | 1995-04-26 | 1996-11-12 | Komatsu Electron Metals Co Ltd | ドーピング装置 |
CN1285009A (zh) * | 1998-01-05 | 2001-02-21 | Memc电子材料有限公司 | 具有熔体掺杂功能的晶体生长装置 |
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- 2012-11-30 CN CN201210505550.XA patent/CN103849927A/zh active Pending
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CN1038123A (zh) * | 1988-05-13 | 1989-12-20 | 科特有限公司 | 交联葡萄糖异构酶 |
CN1041011A (zh) * | 1988-07-07 | 1990-04-04 | 日本钢管株式会社 | 制造硅单晶的方法和设备 |
CN1056135A (zh) * | 1990-04-13 | 1991-11-13 | 日本钢管株式会社 | 单晶硅生产设备 |
US5324488A (en) * | 1991-03-01 | 1994-06-28 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoff M.B.H. | Continuous liquid silicon recharging process in czochralski crucible pulling |
JPH08295591A (ja) * | 1995-04-26 | 1996-11-12 | Komatsu Electron Metals Co Ltd | ドーピング装置 |
CN1285009A (zh) * | 1998-01-05 | 2001-02-21 | Memc电子材料有限公司 | 具有熔体掺杂功能的晶体生长装置 |
CN1414147A (zh) * | 2001-10-26 | 2003-04-30 | 北京有色金属研究总院 | 一种用于直拉硅单晶制备中的掺杂方法及其装置 |
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CN101280461A (zh) * | 2008-01-09 | 2008-10-08 | 西安理工晶体科技有限公司 | 一种用于掺杂锗单晶体掺杂剂的装置 |
CN201224779Y (zh) * | 2008-07-25 | 2009-04-22 | 北京有色金属研究总院 | 一种用于切克劳斯基法制造硅单晶再装料用的锥形底托 |
CN201232093Y (zh) * | 2008-07-25 | 2009-05-06 | 北京有色金属研究总院 | 一种用于切克劳斯基法制造硅单晶再装料或籽晶装置中钢绳的紧固件 |
CN102618919A (zh) * | 2012-03-13 | 2012-08-01 | 杭州奔博科技有限公司 | 一种单晶炉加料装置 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI575123B (zh) * | 2015-10-12 | 2017-03-21 | 環球晶圓股份有限公司 | 摻雜器、長晶爐以及使用長晶爐的方法 |
CN108796603A (zh) * | 2018-08-29 | 2018-11-13 | 内蒙古中环协鑫光伏材料有限公司 | 一种直拉单晶补掺合金的工艺方法 |
CN108796603B (zh) * | 2018-08-29 | 2024-04-19 | 内蒙古中环晶体材料有限公司 | 一种直拉单晶补掺合金的工艺方法 |
CN111364098A (zh) * | 2018-12-26 | 2020-07-03 | 有研半导体材料有限公司 | 一种用于重掺直拉单晶的掺杂装置 |
CN113584574A (zh) * | 2021-08-02 | 2021-11-02 | 宁夏中欣晶圆半导体科技有限公司 | 固相掺杂方法、装置、重掺砷硅单晶生产系统及生产方法 |
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