KR920015495A - 반도체장치 및 그의 제조방법 - Google Patents

반도체장치 및 그의 제조방법 Download PDF

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KR920015495A
KR920015495A KR1019920000276A KR920000276A KR920015495A KR 920015495 A KR920015495 A KR 920015495A KR 1019920000276 A KR1019920000276 A KR 1019920000276A KR 920000276 A KR920000276 A KR 920000276A KR 920015495 A KR920015495 A KR 920015495A
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South Korea
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semiconductor device
film
purity silicon
ladder polymer
formula
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KR1019920000276A
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KR950006431B1 (ko
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에쓰지 아시다데
히로시 아시다찌
히로시 모찌쯔기
유소 가네에
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시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR920015495A publication Critical patent/KR920015495A/ko
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Publication of KR950006431B1 publication Critical patent/KR950006431B1/ko

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

내용 없음

Description

반도체장치 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 1실시예의 반도체장치의 단면도

Claims (2)

  1. 반도체소자 및 이 반도체소자에 형성한 다음식(1)으로 표시되는 고순도 실리콘 래더포리마(silicon ladder polymer)의 경화막으로 형성되는 응력완충 보호막을 구비한 반도체장치.
    (식중, n은 중량평균 분자량이 10만∼20만으로 되는 정수이다.)
  2. 알루미늄(aluminum)막을 형성한 반도체소자에 상기 제1항기재의 식(1)에 표시되는 고순도 실리콘 래더포리마막을 형성하고, 상기 알루미늄을 노출되도록, 방향족계 유기용제에 의해 상기 고순도 실리콘 래더포리마막을 현상하고, 승온속도 20℃/min이상으로 승온하여 경화하고, 냉각속도 20℃/min이상으로 냉각하여 응력완충 보호막을 얻는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920000276A 1991-01-31 1992-01-10 반도체장치 및 그의 제조방법 KR950006431B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3010908A JPH04261049A (ja) 1991-01-31 1991-01-31 半導体装置およびその製造方法
JP91-010908 1991-01-31
JP91-10908 1991-01-31

Publications (2)

Publication Number Publication Date
KR920015495A true KR920015495A (ko) 1992-08-27
KR950006431B1 KR950006431B1 (ko) 1995-06-15

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US (1) US5180691A (ko)
JP (1) JPH04261049A (ko)
KR (1) KR950006431B1 (ko)
DE (1) DE4202290C2 (ko)
IT (1) IT1258835B (ko)

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JP2613128B2 (ja) * 1990-10-01 1997-05-21 三菱電機株式会社 半導体装置

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IT1258835B (it) 1996-02-29
ITMI920178A0 (it) 1992-01-30
DE4202290A1 (de) 1992-08-13
KR950006431B1 (ko) 1995-06-15
JPH04261049A (ja) 1992-09-17
ITMI920178A1 (it) 1993-07-30
DE4202290C2 (de) 2001-07-19
US5180691A (en) 1993-01-19

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