JPS56118334A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56118334A
JPS56118334A JP2141180A JP2141180A JPS56118334A JP S56118334 A JPS56118334 A JP S56118334A JP 2141180 A JP2141180 A JP 2141180A JP 2141180 A JP2141180 A JP 2141180A JP S56118334 A JPS56118334 A JP S56118334A
Authority
JP
Japan
Prior art keywords
polyimide
psg4
opened
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2141180A
Other languages
Japanese (ja)
Inventor
Yorihiro Uchiyama
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2141180A priority Critical patent/JPS56118334A/en
Publication of JPS56118334A publication Critical patent/JPS56118334A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a protective film with improved strength against soft errors and mechanical shocks, by stacking a polyimide film on an insulating film of inorganic compounds. CONSTITUTION:An Si substrate 1 with an Al wiring 2 and a pad 3 is covered with PSG4, on which a polyimide 5 is stacked. Further a resist-mask 6 is formed and the polyimide 5 is opened by organic alkaline solutions and the PSG4 is opened by using CF4 gases. With such an arrangement, the thickly-formed polyimide film protects the substrate 1 against the radioactive rays and the possible soft errors and the damages to the PSG can effectively prevented.
JP2141180A 1980-02-22 1980-02-22 Semiconductor device Pending JPS56118334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2141180A JPS56118334A (en) 1980-02-22 1980-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2141180A JPS56118334A (en) 1980-02-22 1980-02-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56118334A true JPS56118334A (en) 1981-09-17

Family

ID=12054275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2141180A Pending JPS56118334A (en) 1980-02-22 1980-02-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56118334A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197846A (en) * 1982-05-14 1983-11-17 Oki Electric Ind Co Ltd Manufacture of multilayer wiring structure
US5180691A (en) * 1991-01-31 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device sealed with molding resin employing a stress buffering film of silicone
US5600151A (en) * 1995-02-13 1997-02-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising a semiconductor substrate, an element formed thereon, and a stress-buffering film made of a silicone ladder resin

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197846A (en) * 1982-05-14 1983-11-17 Oki Electric Ind Co Ltd Manufacture of multilayer wiring structure
US5180691A (en) * 1991-01-31 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device sealed with molding resin employing a stress buffering film of silicone
DE4202290C2 (en) * 1991-01-31 2001-07-19 Mitsubishi Electric Corp Semiconductor device with cast resin sealing and method for producing the same
US5600151A (en) * 1995-02-13 1997-02-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising a semiconductor substrate, an element formed thereon, and a stress-buffering film made of a silicone ladder resin

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