KR920006011B1 - 반도체기억장치의 동작모드선택회로 - Google Patents

반도체기억장치의 동작모드선택회로 Download PDF

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Publication number
KR920006011B1
KR920006011B1 KR1019870003516A KR870003516A KR920006011B1 KR 920006011 B1 KR920006011 B1 KR 920006011B1 KR 1019870003516 A KR1019870003516 A KR 1019870003516A KR 870003516 A KR870003516 A KR 870003516A KR 920006011 B1 KR920006011 B1 KR 920006011B1
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KR
South Korea
Prior art keywords
operation mode
fuse
circuit means
bonding pad
selection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870003516A
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English (en)
Korean (ko)
Other versions
KR880000965A (ko
Inventor
가즈도시·오자끼 히데유기 히라야마
히데도 히다까
Original Assignee
미쓰비시전기 주식회사
시끼 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰비시전기 주식회사, 시끼 모리야 filed Critical 미쓰비시전기 주식회사
Publication of KR880000965A publication Critical patent/KR880000965A/ko
Application granted granted Critical
Publication of KR920006011B1 publication Critical patent/KR920006011B1/ko
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
    • G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
KR1019870003516A 1986-06-23 1987-04-13 반도체기억장치의 동작모드선택회로 Expired KR920006011B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61146687A JPS634492A (ja) 1986-06-23 1986-06-23 半導体記憶装置
JP146687 1986-06-23
JP86-146687 1987-06-23

Publications (2)

Publication Number Publication Date
KR880000965A KR880000965A (ko) 1988-03-30
KR920006011B1 true KR920006011B1 (ko) 1992-07-25

Family

ID=15413306

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870003516A Expired KR920006011B1 (ko) 1986-06-23 1987-04-13 반도체기억장치의 동작모드선택회로

Country Status (5)

Country Link
US (1) US4833650A (enExample)
JP (1) JPS634492A (enExample)
KR (1) KR920006011B1 (enExample)
DE (1) DE3716518A1 (enExample)
FR (1) FR2600453B1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960003526B1 (ko) * 1992-10-02 1996-03-14 삼성전자주식회사 반도체 메모리장치
US5528551A (en) * 1987-05-21 1996-06-18 Texas Instruments Inc Read/write memory with plural memory cell write capability at a selected row address
JP2623460B2 (ja) * 1987-09-16 1997-06-25 株式会社日立製作所 半導体記憶装置
KR900008554B1 (ko) * 1988-04-23 1990-11-24 삼성전자 주식회사 메모리 동작모드 선택회로
JPH0281619A (ja) * 1988-09-19 1990-03-22 Toray Ind Inc 熱可塑性樹脂フィルムのキャスト方法
US4987325A (en) * 1988-07-13 1991-01-22 Samsung Electronics Co., Ltd. Mode selecting circuit for semiconductor memory device
US5083293A (en) * 1989-01-12 1992-01-21 General Instrument Corporation Prevention of alteration of data stored in secure integrated circuit chip memory
JPH0611804B2 (ja) * 1989-03-01 1994-02-16 東レ株式会社 熱可塑性フィルムの表面処理方法
JPH078529B2 (ja) * 1989-03-13 1995-02-01 東レ株式会社 磁気記録媒体用二軸配向ポリエステルフィルムの製造方法
US5217917A (en) * 1990-03-20 1993-06-08 Hitachi, Ltd. Semiconductor memory device with improved substrate arrangement to permit forming a plurality of different types of random access memory, and a testing method therefor
US5113511A (en) * 1989-06-02 1992-05-12 Atari Corporation System for dynamically providing predicted high/slow speed accessing memory to a processing unit based on instructions
ATE110865T1 (de) * 1989-06-30 1994-09-15 Siemens Ag Integrierte schaltungsanordnung.
US4970418A (en) * 1989-09-26 1990-11-13 Apple Computer, Inc. Programmable memory state machine for providing variable clocking to a multimode memory
IL96808A (en) * 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
US5780918A (en) * 1990-05-22 1998-07-14 Seiko Epson Corporation Semiconductor integrated circuit device having a programmable adjusting element in the form of a fuse mounted on a margin of the device and a method of manufacturing the same
DE69129401T2 (de) * 1990-12-25 1998-10-29 Mitsubishi Electric Corp Halbleiterspeichervorrichtung mit einem grossen Speicher und einem Hochgeschwindigkeitsspeicher
US5587964A (en) * 1991-06-28 1996-12-24 Digital Equipment Corporation Page mode and nibble mode DRAM
JP2856988B2 (ja) * 1992-08-21 1999-02-10 株式会社東芝 半導体集積回路
US6279116B1 (en) 1992-10-02 2001-08-21 Samsung Electronics Co., Ltd. Synchronous dynamic random access memory devices that utilize clock masking signals to control internal clock signal generation
US5355344A (en) * 1992-11-13 1994-10-11 Sgs-Thomson Microelectronics, Inc. Structure for using a portion of an integrated circuit die
JP2888081B2 (ja) * 1993-03-04 1999-05-10 日本電気株式会社 半導体記憶装置
JP3344494B2 (ja) * 1993-03-23 2002-11-11 インターナショナル・ビジネス・マシーンズ・コーポレーション ページモードを有するシングルクロックメモリ
RU2156506C2 (ru) * 1993-04-27 2000-09-20 Самсунг Электроникс Ко., Лтд. Полупроводниковая память
US5418756A (en) * 1993-09-30 1995-05-23 Sgs-Thomson Microelectronics, Inc. Edge transition detection disable circuit to alter memory device operating characteristics
US5457659A (en) * 1994-07-19 1995-10-10 Micron Technology, Inc. Programmable dynamic random access memory (DRAM)
JP3526100B2 (ja) * 1995-03-06 2004-05-10 株式会社ルネサステクノロジ モード設定回路
JPH08321173A (ja) * 1995-05-23 1996-12-03 Mitsubishi Electric Corp 半導体メモリ
US5657293A (en) * 1995-08-23 1997-08-12 Micron Technology, Inc. Integrated circuit memory with back end mode disable
JP2786152B2 (ja) * 1996-04-25 1998-08-13 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
US6608792B2 (en) * 2000-11-09 2003-08-19 Texas Instruments Incorporated Method and apparatus for storing data in an integrated circuit
DE10056590A1 (de) * 2000-11-15 2002-05-23 Philips Corp Intellectual Pty Schaltungsanordnung
US7299327B2 (en) * 2005-02-18 2007-11-20 International Business Machines Corporation Content-on-demand memory key with positive access evidence feature
JP2019134693A (ja) * 2018-02-05 2019-08-15 株式会社マキタ ヘッジトリマ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2948159C2 (de) * 1979-11-29 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Integrierter Speicherbaustein mit wählbaren Betriebsfunktionen
JPS5685934A (en) * 1979-12-14 1981-07-13 Nippon Telegr & Teleph Corp <Ntt> Control signal generating circuit
US4446534A (en) * 1980-12-08 1984-05-01 National Semiconductor Corporation Programmable fuse circuit
JPS5956284A (ja) * 1982-09-24 1984-03-31 Hitachi Micro Comput Eng Ltd 半導体記憶装置
US4586167A (en) * 1983-01-24 1986-04-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
JPS59135695A (ja) * 1983-01-24 1984-08-03 Mitsubishi Electric Corp 半導体記憶装置
DE3318123A1 (de) * 1983-05-18 1984-11-22 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung mit einem datenspeicher und einer ansteuereinheit zum auslesen, schreiben und loeschen des speichers
US4590388A (en) * 1984-04-23 1986-05-20 At&T Bell Laboratories CMOS spare decoder circuit
US4685084A (en) * 1985-06-07 1987-08-04 Intel Corporation Apparatus for selecting alternate addressing mode and read-only memory
JPS62139198A (ja) * 1985-12-11 1987-06-22 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
DE3716518C2 (enExample) 1991-07-04
DE3716518A1 (de) 1988-01-14
US4833650A (en) 1989-05-23
FR2600453A1 (fr) 1987-12-24
KR880000965A (ko) 1988-03-30
JPS634492A (ja) 1988-01-09
FR2600453B1 (fr) 1993-12-03

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