KR900013008A - 반도체 봉지용 에폭시 수지 조성물 및 반도체장치 - Google Patents

반도체 봉지용 에폭시 수지 조성물 및 반도체장치 Download PDF

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Publication number
KR900013008A
KR900013008A KR1019900002445A KR900002445A KR900013008A KR 900013008 A KR900013008 A KR 900013008A KR 1019900002445 A KR1019900002445 A KR 1019900002445A KR 900002445 A KR900002445 A KR 900002445A KR 900013008 A KR900013008 A KR 900013008A
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KR
South Korea
Prior art keywords
epoxy resin
resin composition
semiconductor
semiconductor device
less
Prior art date
Application number
KR1019900002445A
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English (en)
Other versions
KR950005310B1 (ko
Inventor
데쓰오 요시따
요시오 후지무라
미노루 다께이
Original Assignee
고사까 유따로
신에쓰 가가꾸 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 고사까 유따로, 신에쓰 가가꾸 고오교 가부시끼가이샤 filed Critical 고사까 유따로
Publication of KR900013008A publication Critical patent/KR900013008A/ko
Application granted granted Critical
Publication of KR950005310B1 publication Critical patent/KR950005310B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23—Sheet including cover or casing
    • Y10T428/239—Complete cover or casing

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)

Abstract

내용 없음

Description

반도체 봉지용 에폭시 수지 조성물 및 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 버어의 발생 유무를 조사하기 위해 사용한 금형의 단면도이고,
제2도는 동 금형의 하금형 평면도이다.

Claims (2)

  1. (가)에폭시 수지, (나) 경화제, (다)충전제로서 순도가 99.5% 이상으로 Na2O의 함유율이 0.03%이하이고, 또한 100℃물로 추출한 때의 Na이온 함량이 5ppm이하, Cl이온 함유량이 1ppm이하임과 동시에, 평균 입자 지름이 5μm-60μm이고, 또한 입자 지름 250μm이상의 입자 함유율이 1%이하인 α-알루미나 및 (라) 실리콘 변성 에폭시 수지 및 및/또는 실리콘 변성페놀 수지를 배합한 것을 특징으로 하는 반도체 봉지용 에폭시 수지 조성물.
  2. 제1항에 의한 반도체 봉지용 에폭시 수지 조성물의 경화물로 봉지시킨 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900002445A 1989-02-27 1990-02-26 반도체 봉지용 에폭시 수지 조성물 및 반도체 장치 KR950005310B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1048303A JPH0362844A (ja) 1989-02-27 1989-02-27 半導体封止用エポキシ樹脂組成物及び半導体装置
JP1-48,303 1989-02-27
JP1-48303 1989-02-27

Publications (2)

Publication Number Publication Date
KR900013008A true KR900013008A (ko) 1990-09-03
KR950005310B1 KR950005310B1 (ko) 1995-05-23

Family

ID=12799663

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900002445A KR950005310B1 (ko) 1989-02-27 1990-02-26 반도체 봉지용 에폭시 수지 조성물 및 반도체 장치

Country Status (4)

Country Link
US (1) US5096762A (ko)
JP (1) JPH0362844A (ko)
KR (1) KR950005310B1 (ko)
DE (1) DE4006153C2 (ko)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2570002B2 (ja) * 1991-05-29 1997-01-08 信越化学工業株式会社 フリップチップ用封止材及び半導体装置
US5134094A (en) * 1991-07-22 1992-07-28 Silicon Power Corporation Single inline packaged solid state relay with high current density capability
US5358980A (en) * 1991-10-03 1994-10-25 Shin-Etsu Chemical Company, Limited Naphthol novolac epoxy resin compositions and semiconductor devices encapsulated therewith
JP2768088B2 (ja) * 1991-10-03 1998-06-25 信越化学工業株式会社 熱硬化性樹脂組成物及び半導体装置
EP0544618A1 (de) * 1991-11-27 1993-06-02 Ciba-Geigy Ag Hochgefüllte Epoxid-Giessharzmassen
US5576362A (en) * 1992-04-20 1996-11-19 Denki Kagaku Kogyo Kabushiki Kaisha Insulating material and a circuit substrate in use thereof
JPH07109337A (ja) * 1993-08-20 1995-04-25 Toshiba Corp エポキシ樹脂注型材料
DE9413550U1 (de) * 1994-08-23 1996-01-11 Dylec Ltd Halbleiteranordnung mit wenigstens einem Halbleiterbauelement
DE19523897C2 (de) * 1995-06-30 2002-10-24 Bosch Gmbh Robert Verwendung von Silicon-modifizierten Epoxidharzen als Vergußmassen für elektrotechnische oder elektronische Bauteile
US5691402A (en) * 1996-09-13 1997-11-25 Composite Technology Group, Llc Composite tooling material having vinyl ester resins and fillers
US6038133A (en) * 1997-11-25 2000-03-14 Matsushita Electric Industrial Co., Ltd. Circuit component built-in module and method for producing the same
JP3756691B2 (ja) * 1999-03-18 2006-03-15 株式会社日立製作所 内燃機関用の樹脂封止形電子装置
DE19913904C1 (de) * 1999-03-26 2001-02-01 Tyco Electronics Logistics Ag Verfahren zum Abdichten von Durchführungen und Vergußmasse zur Anwendung in diesem Verfahren
US6309587B1 (en) 1999-08-13 2001-10-30 Jeffrey L. Gniatczyk Composite molding tools and parts and processes of forming molding tools
KR20050010847A (ko) * 2002-05-30 2005-01-28 다우 글로벌 테크놀로지스 인크. 할로겐 비함유 내점화성 열가소성 수지 조성물
SG115586A1 (en) * 2002-11-12 2005-10-28 Nitto Denko Corp Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same
US7790069B2 (en) * 2003-12-19 2010-09-07 Nec Corporation Flame-retardant thermoplastic resin composition
US7288847B2 (en) * 2005-01-25 2007-10-30 Medtronic, Inc. Assembly including a circuit and an encapsulation frame, and method of making the same
JP4984501B2 (ja) * 2005-11-25 2012-07-25 住友ベークライト株式会社 エポキシ樹脂組成物及び半導体装置
JP5089885B2 (ja) * 2006-01-17 2012-12-05 太陽ホールディングス株式会社 放熱絶縁性樹脂組成物、及びそれを用いたプリント配線板
US20080039555A1 (en) * 2006-08-10 2008-02-14 Michel Ruyters Thermally conductive material
JP2008045075A (ja) * 2006-08-21 2008-02-28 Sumitomo Bakelite Co Ltd 封止用エポキシ樹脂組成物及び電子部品装置
JP2013023661A (ja) * 2011-07-25 2013-02-04 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP2013122029A (ja) * 2011-12-12 2013-06-20 Sumitomo Bakelite Co Ltd フィラー、絶縁層形成用組成物、絶縁層形成用フィルムおよび基板
JP2014187209A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 半導体装置
WO2015183892A1 (en) * 2014-05-27 2015-12-03 Reno Kaleigh Havery Bisphenol alternatives derived from renewable susbstituted phenolics and their industrial application
JP7034578B2 (ja) * 2016-03-08 2022-03-14 旭化成株式会社 エポキシ樹脂組成物、エポキシ樹脂半硬化組成物、半導体装置、及び複合材
JP6983179B2 (ja) * 2016-05-06 2021-12-17 スリーエム イノベイティブ プロパティズ カンパニー 硬化性組成物、研磨物品及びその製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
JPS559634A (en) * 1978-07-07 1980-01-23 Showa Denko Kk Resin composition
JPS6151067A (ja) * 1984-08-21 1986-03-13 Mitsubishi Rayon Co Ltd 表面被覆用組成物
US4720515A (en) * 1985-05-17 1988-01-19 Denki Kagaku Kogyo Kabushiki Kaisha Epoxy resin composition for encapsulating semiconductor
JPS62212417A (ja) * 1986-03-13 1987-09-18 Shin Etsu Chem Co Ltd エポキシ樹脂組成物
JPS62254454A (ja) * 1986-04-25 1987-11-06 Nitto Electric Ind Co Ltd 半導体装置
JPS62254453A (ja) * 1986-04-25 1987-11-06 Nitto Electric Ind Co Ltd 半導体装置
JPS6317927A (ja) * 1986-07-09 1988-01-25 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物
JPS6317928A (ja) * 1986-07-10 1988-01-25 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物
JPS63160254A (ja) * 1986-12-23 1988-07-04 Nitto Electric Ind Co Ltd 半導体装置
JPS63183917A (ja) * 1987-01-26 1988-07-29 Denki Kagaku Kogyo Kk エポキシ樹脂組成物
JPH0617458B2 (ja) * 1987-03-16 1994-03-09 信越化学工業株式会社 エポキシ樹脂組成物
JPS63226951A (ja) * 1987-03-16 1988-09-21 Shin Etsu Chem Co Ltd 樹脂封止型半導体装置
JPS649215A (en) * 1987-07-02 1989-01-12 Shinetsu Chemical Co Epoxy resin composition
JPH01272619A (ja) * 1987-07-22 1989-10-31 Mitsubishi Gas Chem Co Inc エポキシ樹脂組成物
JPS6438426A (en) * 1987-08-03 1989-02-08 Matsushita Electric Works Ltd Epoxy resin molding material
JPS6438427A (en) * 1987-08-03 1989-02-08 Matsushita Electric Works Ltd Epoxy resin molding material
JPH01126361A (ja) * 1987-11-12 1989-05-18 Denki Kagaku Kogyo Kk エポキシ樹脂組成物
JPH01190748A (ja) * 1988-01-26 1989-07-31 Shin Etsu Chem Co Ltd 半導体封止用エポキシ樹脂組成物
JP2608107B2 (ja) * 1988-06-28 1997-05-07 三菱電機株式会社 半導体封止用エポキシ樹脂組成物
JPH0228213A (ja) * 1988-04-05 1990-01-30 Mitsubishi Electric Corp 半導体封止用エポキシ樹脂組成物
JPH0232119A (ja) * 1988-07-21 1990-02-01 Matsushita Electric Works Ltd 半導体封止用エポキシ樹脂組成物
JPH02140226A (ja) * 1988-11-21 1990-05-29 Hitachi Chem Co Ltd 半導体封止用エポキシ樹脂組成物
JPH02140227A (ja) * 1988-11-21 1990-05-29 Hitachi Chem Co Ltd 半導体封止用エポキシ樹脂組成物
JPH02175718A (ja) * 1988-12-28 1990-07-09 Nippon Steel Chem Co Ltd エポキシ樹脂組成物
JPH02175717A (ja) * 1988-12-28 1990-07-09 Nippon Steel Chem Co Ltd エポキシ樹脂組成物

Also Published As

Publication number Publication date
DE4006153A1 (de) 1990-08-30
JPH0362844A (ja) 1991-03-18
DE4006153C2 (de) 1998-01-29
US5096762A (en) 1992-03-17
KR950005310B1 (ko) 1995-05-23

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