KR900012364A - 더미비트선을 갖춘 반도체 메모리장치 - Google Patents

더미비트선을 갖춘 반도체 메모리장치

Info

Publication number
KR900012364A
KR900012364A KR1019900001106A KR900001106A KR900012364A KR 900012364 A KR900012364 A KR 900012364A KR 1019900001106 A KR1019900001106 A KR 1019900001106A KR 900001106 A KR900001106 A KR 900001106A KR 900012364 A KR900012364 A KR 900012364A
Authority
KR
South Korea
Prior art keywords
memory device
bit line
semiconductor memory
dummy bit
dummy
Prior art date
Application number
KR1019900001106A
Other languages
English (en)
Other versions
KR930007279B1 (ko
Inventor
유타카 다나카
마사노리 하라구치
Original Assignee
가부시키가이샤 도시바
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 가부시키가이샤 도시바
Publication of KR900012364A publication Critical patent/KR900012364A/ko
Application granted granted Critical
Publication of KR930007279B1 publication Critical patent/KR930007279B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019900001106A 1989-01-31 1990-01-31 더미비트선을 갖춘 반도체 메모리장치 KR930007279B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01-021004 1989-01-31
JP1021004A JPH02201797A (ja) 1989-01-31 1989-01-31 半導体メモリ装置

Publications (2)

Publication Number Publication Date
KR900012364A true KR900012364A (ko) 1990-08-03
KR930007279B1 KR930007279B1 (ko) 1993-08-04

Family

ID=12042936

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900001106A KR930007279B1 (ko) 1989-01-31 1990-01-31 더미비트선을 갖춘 반도체 메모리장치

Country Status (5)

Country Link
US (1) US5007024A (ko)
EP (1) EP0383080B1 (ko)
JP (1) JPH02201797A (ko)
KR (1) KR930007279B1 (ko)
DE (1) DE69007827T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100735642B1 (ko) * 2001-06-15 2007-07-06 후지쯔 가부시끼가이샤 반도체 기억장치

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2789755B2 (ja) * 1990-01-12 1998-08-20 日本電気株式会社 同期式半導体記憶装置
JPH04214297A (ja) * 1990-12-13 1992-08-05 Mitsubishi Electric Corp 増幅回路
JP3057780B2 (ja) * 1991-03-06 2000-07-04 日本電気アイシーマイコンシステム株式会社 半導体集積回路
JPH05266663A (ja) * 1992-03-19 1993-10-15 Fujitsu Ltd 半導体記憶装置
US5289415A (en) * 1992-04-17 1994-02-22 Motorola, Inc. Sense amplifier and latching circuit for an SRAM
EP0600142B1 (en) * 1992-11-30 1999-05-06 STMicroelectronics S.r.l. High performance single port RAM generator architecture
GB2277390B (en) * 1993-04-21 1997-02-26 Plessey Semiconductors Ltd Random access memory
US5424985A (en) * 1993-06-30 1995-06-13 Sgs-Thomson Microelectronics, Inc. Compensating delay element for clock generation in a memory device
KR960011207B1 (ko) * 1993-11-17 1996-08-21 김광호 반도체 메모리 장치의 데이타 센싱방법 및 그 회로
GB2286272A (en) * 1994-01-31 1995-08-09 Advanced Risc Mach Ltd Data memory sense amplifier operation
US5563835A (en) * 1994-01-31 1996-10-08 Advanced Risc Machines Limited Sense amplification in data memories
US5694143A (en) 1994-06-02 1997-12-02 Accelerix Limited Single chip frame buffer and graphics accelerator
JPH10502181A (ja) * 1994-06-20 1998-02-24 ネオマジック・コーポレイション メモリインタフェースのないグラフィックスコントローラ集積回路
US5481500A (en) * 1994-07-22 1996-01-02 International Business Machines Corporation Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories
US5687130A (en) * 1994-11-30 1997-11-11 Texas Instruments Incorporated Memory cell with single bit line read back
US5596539A (en) * 1995-12-28 1997-01-21 Lsi Logic Corporation Method and apparatus for a low power self-timed memory control system
US5828245A (en) * 1996-10-24 1998-10-27 Stmicroelectronics, Inc. Driver circuit including amplifier operated in a switching mode
US5708617A (en) * 1997-01-28 1998-01-13 Micron Technology, Inc. Regressive drive sense amplifier
DE69723226D1 (de) * 1997-04-03 2003-08-07 St Microelectronics Srl Speicheranordnung mit vermindertem Leistungsverlust
JP4059951B2 (ja) * 1997-04-11 2008-03-12 株式会社ルネサステクノロジ 半導体記憶装置
US5973974A (en) * 1997-09-09 1999-10-26 Micro Technology, Inc. Regressive drive sense amplifier
US5946267A (en) * 1997-11-25 1999-08-31 Atmel Corporation Zero power high speed configuration memory
EP0944089A1 (en) * 1998-03-16 1999-09-22 Nec Corporation Semiconductor memory device
JP2000243082A (ja) * 1999-02-17 2000-09-08 Mitsubishi Electric Corp 半導体記憶装置
CA2277717C (en) * 1999-07-12 2006-12-05 Mosaid Technologies Incorporated Circuit and method for multiple match detection in content addressable memories
US6490214B2 (en) * 2000-12-26 2002-12-03 Kabushiki Kaisha Toshiba Semiconductor memory device
ITRM20010531A1 (it) * 2001-08-31 2003-02-28 Micron Technology Inc Dispositivo rilevatore a bassa potenza e alta tensione per memorie ditipo flash.
KR100454145B1 (ko) * 2001-11-23 2004-10-26 주식회사 하이닉스반도체 플래쉬 메모리 장치
KR100555521B1 (ko) * 2003-10-28 2006-03-03 삼성전자주식회사 두 번 이상 샘플링하는 감지 증폭기를 구비하는 반도체 장치 및 반도체 장치의 데이터 판독 방법
JP5343916B2 (ja) 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
US8693264B2 (en) 2012-02-21 2014-04-08 Lsi Corporation Memory device having sensing circuitry with automatic latching of sense amplifier output node
JP6752126B2 (ja) * 2016-11-25 2020-09-09 ラピスセミコンダクタ株式会社 センスアンプ回路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4351034A (en) * 1980-10-10 1982-09-21 Inmos Corporation Folded bit line-shared sense amplifiers
JPS60125998A (ja) * 1983-12-12 1985-07-05 Fujitsu Ltd 半導体記憶装置
US4715015A (en) * 1984-06-01 1987-12-22 Sharp Kabushiki Kaisha Dynamic semiconductor memory with improved sense signal
JPH0736273B2 (ja) * 1984-11-26 1995-04-19 株式会社日立製作所 半導体集積回路
EP0189908B1 (en) * 1985-01-30 1992-10-28 Nec Corporation Dynamic memory with improved arrangement for precharging bit lines
JPS61276198A (ja) * 1985-04-26 1986-12-06 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド Ｃｍｏｓメモリバイアスシステム
JPH0787032B2 (ja) * 1985-07-08 1995-09-20 日本電気アイシ−マイコンシステム株式会社 半導体記憶装置
JPH0743938B2 (ja) * 1985-10-09 1995-05-15 日本電気株式会社 差動増幅器
JPS6286599A (ja) * 1985-10-09 1987-04-21 Nec Corp 半導体記憶装置
JPS62197996A (ja) * 1986-02-24 1987-09-01 Toshiba Corp 半導体メモリのセンスアンプ
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
JP2618938B2 (ja) * 1987-11-25 1997-06-11 株式会社東芝 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100735642B1 (ko) * 2001-06-15 2007-07-06 후지쯔 가부시끼가이샤 반도체 기억장치

Also Published As

Publication number Publication date
KR930007279B1 (ko) 1993-08-04
DE69007827D1 (de) 1994-05-11
DE69007827T2 (de) 1994-08-11
EP0383080B1 (en) 1994-04-06
EP0383080A2 (en) 1990-08-22
US5007024A (en) 1991-04-09
EP0383080A3 (en) 1991-06-26
JPH02201797A (ja) 1990-08-09

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