KR900001652B1 - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR900001652B1
KR900001652B1 KR1019860006335A KR860006335A KR900001652B1 KR 900001652 B1 KR900001652 B1 KR 900001652B1 KR 1019860006335 A KR1019860006335 A KR 1019860006335A KR 860006335 A KR860006335 A KR 860006335A KR 900001652 B1 KR900001652 B1 KR 900001652B1
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KR
South Korea
Prior art keywords
metal layer
semiconductor device
aluminum
layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860006335A
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English (en)
Korean (ko)
Other versions
KR870004504A (ko
Inventor
요시히로 히라다
레이지 다마기
다께시 노구찌
큥 이찌 아리마
겡지 사이또오
시게루 하라다
Original Assignee
미쓰비시 뎅기 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅기 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅기 가부시끼가이샤
Publication of KR870004504A publication Critical patent/KR870004504A/ko
Application granted granted Critical
Publication of KR900001652B1 publication Critical patent/KR900001652B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019860006335A 1985-10-08 1986-07-31 반도체 장치 및 그 제조방법 Expired KR900001652B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-224284 1985-10-08
JP60224284A JPH0611076B2 (ja) 1985-10-08 1985-10-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR870004504A KR870004504A (ko) 1987-05-09
KR900001652B1 true KR900001652B1 (ko) 1990-03-17

Family

ID=16811357

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860006335A Expired KR900001652B1 (ko) 1985-10-08 1986-07-31 반도체 장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US4896204A (enExample)
JP (1) JPH0611076B2 (enExample)
KR (1) KR900001652B1 (enExample)
DE (1) DE3634168A1 (enExample)
GB (1) GB2181893B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
DE3815512C2 (de) * 1988-05-06 1994-07-28 Deutsche Aerospace Solarzelle und Verfahren zu ihrer Herstellung
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
US5126283A (en) * 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
JPH07123101B2 (ja) * 1990-09-14 1995-12-25 株式会社東芝 半導体装置
US5175125A (en) * 1991-04-03 1992-12-29 Chartered Semiconductor Manufacturing Ltd. Pte Method for making electrical contacts
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US5382447A (en) * 1993-12-02 1995-01-17 International Business Machines Corporation Process for fabricating improved multilayer interconnect systems
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6906421B1 (en) * 1998-01-14 2005-06-14 Cypress Semiconductor Corporation Method of forming a low resistivity Ti-containing interconnect and semiconductor device comprising the same
DE69937953D1 (de) * 1999-11-22 2008-02-21 St Microelectronics Srl Korrosion durch Feuchtigkeit inhibierende Schicht für Metallisierungsschichten aus Al für elektronische Vorrichtungen und Verfahren zur Herstellung
JP6191587B2 (ja) * 2014-12-08 2017-09-06 トヨタ自動車株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866311A (en) * 1971-06-14 1975-02-18 Nat Semiconductor Corp Method of providing electrically isolated overlapping metallic conductors
JPS52147988A (en) * 1976-06-03 1977-12-08 Toshiba Corp Manufacture of semiconductor device
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
JPS56105660A (en) * 1980-01-28 1981-08-22 Nec Corp Semiconductor device
US4471376A (en) * 1981-01-14 1984-09-11 Harris Corporation Amorphous devices and interconnect system and method of fabrication
DE3140669A1 (de) * 1981-10-13 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitervorrichtungen
JPS58103168A (ja) * 1981-12-16 1983-06-20 Fujitsu Ltd 半導体装置
JPS58137231A (ja) * 1982-02-09 1983-08-15 Nec Corp 集積回路装置
JPS58201367A (ja) * 1982-05-20 1983-11-24 Nec Corp Ｍｏｓ型半導体装置の製造方法
DE3382482D1 (de) * 1982-09-30 1992-01-30 Advanced Micro Devices Inc Aluminium-metall-silicid-verbindungsstruktur fuer integrierte schaltungen und deren herstellungsverfahren.
DE3244461A1 (de) * 1982-12-01 1984-06-07 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung mit einer aus einer aluminium/silizium-legierung bestehenden kontaktleiterbahnebene
JPS60136337A (ja) * 1983-12-22 1985-07-19 モノリシツク・メモリ−ズ・インコ−ポレイテツド ２重層処理においてヒロツク抑制層を形成する方法及びその構造物

Also Published As

Publication number Publication date
DE3634168C2 (enExample) 1991-12-05
JPH0611076B2 (ja) 1994-02-09
JPS6284534A (ja) 1987-04-18
GB2181893A (en) 1987-04-29
US4896204A (en) 1990-01-23
GB2181893B (en) 1989-03-30
GB8623528D0 (en) 1986-11-05
KR870004504A (ko) 1987-05-09
DE3634168A1 (de) 1987-04-16

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