GB2181893B - Semiconductor device and method of manufacturing thereof - Google Patents

Semiconductor device and method of manufacturing thereof

Info

Publication number
GB2181893B
GB2181893B GB8623528A GB8623528A GB2181893B GB 2181893 B GB2181893 B GB 2181893B GB 8623528 A GB8623528 A GB 8623528A GB 8623528 A GB8623528 A GB 8623528A GB 2181893 B GB2181893 B GB 2181893B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8623528A
Other languages
English (en)
Other versions
GB2181893A (en
GB8623528D0 (en
Inventor
Yoshihiro Hirata
Reiji Tamaki
Takeshi Noguchi
Junichi Arima
Kenji Saitoh
Shigeru Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB8623528D0 publication Critical patent/GB8623528D0/en
Publication of GB2181893A publication Critical patent/GB2181893A/en
Application granted granted Critical
Publication of GB2181893B publication Critical patent/GB2181893B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
GB8623528A 1985-10-08 1986-10-01 Semiconductor device and method of manufacturing thereof Expired GB2181893B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60224284A JPH0611076B2 (ja) 1985-10-08 1985-10-08 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
GB8623528D0 GB8623528D0 (en) 1986-11-05
GB2181893A GB2181893A (en) 1987-04-29
GB2181893B true GB2181893B (en) 1989-03-30

Family

ID=16811357

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8623528A Expired GB2181893B (en) 1985-10-08 1986-10-01 Semiconductor device and method of manufacturing thereof

Country Status (5)

Country Link
US (1) US4896204A (enExample)
JP (1) JPH0611076B2 (enExample)
KR (1) KR900001652B1 (enExample)
DE (1) DE3634168A1 (enExample)
GB (1) GB2181893B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
DE3815512C2 (de) * 1988-05-06 1994-07-28 Deutsche Aerospace Solarzelle und Verfahren zu ihrer Herstellung
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
US5126283A (en) * 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
JPH07123101B2 (ja) * 1990-09-14 1995-12-25 株式会社東芝 半導体装置
US5175125A (en) * 1991-04-03 1992-12-29 Chartered Semiconductor Manufacturing Ltd. Pte Method for making electrical contacts
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US5382447A (en) * 1993-12-02 1995-01-17 International Business Machines Corporation Process for fabricating improved multilayer interconnect systems
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6906421B1 (en) * 1998-01-14 2005-06-14 Cypress Semiconductor Corporation Method of forming a low resistivity Ti-containing interconnect and semiconductor device comprising the same
DE69937953D1 (de) * 1999-11-22 2008-02-21 St Microelectronics Srl Korrosion durch Feuchtigkeit inhibierende Schicht für Metallisierungsschichten aus Al für elektronische Vorrichtungen und Verfahren zur Herstellung
JP6191587B2 (ja) * 2014-12-08 2017-09-06 トヨタ自動車株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0082012A2 (en) * 1981-12-16 1983-06-22 Fujitsu Limited Multilayer electrode of a semiconductor device
WO1984001471A1 (en) * 1982-09-30 1984-04-12 Advanced Micro Devices Inc An aluminum-metal silicide interconnect structure for integrated circuits and method of manufacture thereof
US4561009A (en) * 1979-07-11 1985-12-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866311A (en) * 1971-06-14 1975-02-18 Nat Semiconductor Corp Method of providing electrically isolated overlapping metallic conductors
JPS52147988A (en) * 1976-06-03 1977-12-08 Toshiba Corp Manufacture of semiconductor device
JPS56105660A (en) * 1980-01-28 1981-08-22 Nec Corp Semiconductor device
US4471376A (en) * 1981-01-14 1984-09-11 Harris Corporation Amorphous devices and interconnect system and method of fabrication
DE3140669A1 (de) * 1981-10-13 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitervorrichtungen
JPS58137231A (ja) * 1982-02-09 1983-08-15 Nec Corp 集積回路装置
JPS58201367A (ja) * 1982-05-20 1983-11-24 Nec Corp Ｍｏｓ型半導体装置の製造方法
DE3244461A1 (de) * 1982-12-01 1984-06-07 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung mit einer aus einer aluminium/silizium-legierung bestehenden kontaktleiterbahnebene
JPS60136337A (ja) * 1983-12-22 1985-07-19 モノリシツク・メモリ−ズ・インコ−ポレイテツド ２重層処理においてヒロツク抑制層を形成する方法及びその構造物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561009A (en) * 1979-07-11 1985-12-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
EP0082012A2 (en) * 1981-12-16 1983-06-22 Fujitsu Limited Multilayer electrode of a semiconductor device
WO1984001471A1 (en) * 1982-09-30 1984-04-12 Advanced Micro Devices Inc An aluminum-metal silicide interconnect structure for integrated circuits and method of manufacture thereof

Also Published As

Publication number Publication date
DE3634168C2 (enExample) 1991-12-05
JPH0611076B2 (ja) 1994-02-09
JPS6284534A (ja) 1987-04-18
KR900001652B1 (ko) 1990-03-17
GB2181893A (en) 1987-04-29
US4896204A (en) 1990-01-23
GB8623528D0 (en) 1986-11-05
KR870004504A (ko) 1987-05-09
DE3634168A1 (de) 1987-04-16

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19951108

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20001001