KR900000500A - 기판에 절연체를 코팅하기 위한장치 - Google Patents

기판에 절연체를 코팅하기 위한장치 Download PDF

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KR900000500A
KR900000500A KR1019890008711A KR890008711A KR900000500A KR 900000500 A KR900000500 A KR 900000500A KR 1019890008711 A KR1019890008711 A KR 1019890008711A KR 890008711 A KR890008711 A KR 890008711A KR 900000500 A KR900000500 A KR 900000500A
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current source
target
voltage
substrate
electrode
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KR1019890008711A
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쉐러 미하엘
랏츠 루돌프
팟츠 울리히
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바텐슐락, 투테
레이볼트 악티엔게젤샤프트
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Publication of KR900000500A publication Critical patent/KR900000500A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulating Bodies (AREA)

Abstract

내용 없음

Description

기판에 절연체를 코팅하기 위한 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명에 의한 장치의 기본도,
제 2도는 공지된 dc전류 마그네트론 스퍼터링 장치에서 7 ×10-3mbar의 압력하에서 음극전압의 함수로서 음극전류 뿐만 아니라 스퍼터링 출력에 대한 스퍼터링 속도를 나타내는 도표, 제3도는 7 ×10-3mbar의 아르곤 압력, 6.7SCCM/min의 일정한 O2흐름과 Al표적에서 dc전류 음극전압의 함수로서 음극전류 뿐만 아니라 O2부분 압력을 나타내는 도표.

Claims (17)

  1. 스퍼트되는 표적에 접속된 전극과 접속되는 dc전류 소오스가 구비되고, 환상자계가 표적을 투과하여 그 필드선이 자극영역에서 표적의 표면으로부터 나옴에 따라 표적의 스퍼트된 입자가 기판위에 부착되는 유도물질에 의해 화합물을 형성하는 기판에 절연체를 코팅하는 장치에 있어서, ac전류 소오스(30)가 구비되어 그 출력전압이 dc전류 소오스(10)의 dc전압과 중첩되고, 전극(5)에 공급되는 ac전류 소오스(30)의 전기출력은 dc전류 소오스(10)에 의해서 전극(5)에 제공된 출력의 5% 내지 25%에 대응하는 것을 특징으로 하는 기판에 절연체를 코팅하기 위한 장치.
  2. 제1항에 있어서, ac전류 소오스(30)은 HF전류 소오스인 것을 특징으로 하는 장치.
  3. 제1항과 2항에 있어서, HF출력은 dc전류 출력의 10%인 것을 특징으로 하는 장치.
  4. 제1항에 있어서, dc전류 소오스(10)은 두 인덕터(11,12)을 경유하여 전극(5)에 결합되는 것을 특징으로 하는 장치.
  5. 제1항에 있어서, ac전류 소오스(30)은 커패시터(33,34)을 경유하여 전극(5)에 결합되는 것을 특징으로 하는 장치.
  6. 제4항에 있어서, dc전류 소오스(10)은 제1인덕터(11)사이와 접지전위 사이에 커패시터(29)가 있는 것을 특징으로 하는 장치.
  7. 제4항에 있어서, 제1인덕터(11)과, 제2인덕터(12)사이와 접지전위 사이에, 커패시터(32)가 위치되어 있는 것을 특징으로 하는 장치.
  8. 제1항에 있어서, 도표(26)을 정의하는, 개구를 갖는 제2용기(24)에 제1용기(25)가 구비되고 코팅되는 기판(1)이 제2용기(24)의 개구를 통하여 표적(3)에 대응하고 일이상의 기체가 제1용기와 제2용기(25,24)사이의 공간속으로 들어가도록 하는 것을 특징으로 하는 장치.
  9. 제1항에 있어서, ac전류 소오스(30)은 13.56MHz의 ac전압을 공급하는 것을 특징으로 하는 장치.
  10. 제1항에 있어서, 표적(3)은 알루미늄으로 구성되고 기판위에 형성되는 층은 Al2O3으로 구성되는 것을 특징으로 하는 장치.
  11. 제1항에 있어서, 표적(3)은 도우핑된, 전도성 실리콘으로 구성되고, 기판위에 형성된 층은 SiO2로 구성되는 것을 특징으로 하는 장치.
  12. 제1항에 있어서, 표적(3)은 알루미늄으로 구성되고 기판위에 형성된 층은 AIN으로 구성되는 것을 특징으로 하는 장치.
  13. 제1항에 있어서, 표적(3)은 도우핑된 전도성 실리콘으로 구성되고 기판위에 형성된 층은 Si3N4으로 구성되는 것을 특징으로 하는 장치.
  14. 제1항에 있어서, 표적물질의 종류에 따라 dc전류 소오스(10)가 작동되어, 전류전압 또는 출력전압에 대하여 제어하는 것을 특징으로 하는 장치.
  15. 제1항에 있어서, Al, Si 또는 Sn의 표적이 사용될때, dc전류 소오스(10)가 전압에 대하여 우선적으로 제어되는 것을 특징으로 하는 장치.
  16. 제1항에 있어서, 아르곤/산소 분위기내에서 Al,Si,Sn,In/Sn의 표적을 스퍼터링 할떼 dc전류 소오스(10)가 전압에 대하여 제어되어 작동하는 것을 특징으로 하는 장치.
  17. 제1항에 있어서, 아르곤/질소 분위기내에서 Al,Si의 표적(3)이 스퍼트될때 dc전류 소오스(10)가 전압에 대해서 제어되어 작동하는 것을 특징으로 하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890008711A 1988-06-23 1989-06-23 기판에 절연체를 코팅하기 위한장치 KR900000500A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3821207A DE3821207A1 (de) 1988-06-23 1988-06-23 Anordnung zum beschichten eines substrats mit dielektrika
DEP3821207.2 1988-06-23

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KR900000500A true KR900000500A (ko) 1990-01-30

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US (1) US4931169A (ko)
EP (1) EP0347567A3 (ko)
JP (1) JPH0254764A (ko)
KR (1) KR900000500A (ko)
DE (1) DE3821207A1 (ko)

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US4931169A (en) 1990-06-05
EP0347567A3 (de) 1991-07-17

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