SE0303136D0 - Method and apparatus for reactive soilid-gas-plasma deposition - Google Patents

Method and apparatus for reactive soilid-gas-plasma deposition

Info

Publication number
SE0303136D0
SE0303136D0 SE0303136A SE0303136A SE0303136D0 SE 0303136 D0 SE0303136 D0 SE 0303136D0 SE 0303136 A SE0303136 A SE 0303136A SE 0303136 A SE0303136 A SE 0303136A SE 0303136 D0 SE0303136 D0 SE 0303136D0
Authority
SE
Sweden
Prior art keywords
processing chamber
anode
plasma
cathode
work piece
Prior art date
Application number
SE0303136A
Other languages
English (en)
Inventor
Vladimir Kouznetsov
Original Assignee
Chemfilt R & D Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chemfilt R & D Ab filed Critical Chemfilt R & D Ab
Priority to SE0303136A priority Critical patent/SE0303136D0/sv
Publication of SE0303136D0 publication Critical patent/SE0303136D0/sv
Priority to US10/580,406 priority patent/US20090057133A1/en
Priority to PCT/SE2004/001742 priority patent/WO2005050696A1/en
Priority to EP04800401A priority patent/EP1692711A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0068Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SE0303136A 2003-11-24 2003-11-24 Method and apparatus for reactive soilid-gas-plasma deposition SE0303136D0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE0303136A SE0303136D0 (sv) 2003-11-24 2003-11-24 Method and apparatus for reactive soilid-gas-plasma deposition
US10/580,406 US20090057133A1 (en) 2003-11-24 2004-11-24 Method and Apparatus for Reactive Solid-Gas Plasma Deposition
PCT/SE2004/001742 WO2005050696A1 (en) 2003-11-24 2004-11-24 Method and apparatus for reactive solid-gas plasma deposition
EP04800401A EP1692711A1 (en) 2003-11-24 2004-11-24 Method and apparatus for reactive solid-gas plasma deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0303136A SE0303136D0 (sv) 2003-11-24 2003-11-24 Method and apparatus for reactive soilid-gas-plasma deposition

Publications (1)

Publication Number Publication Date
SE0303136D0 true SE0303136D0 (sv) 2003-11-24

Family

ID=29729153

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0303136A SE0303136D0 (sv) 2003-11-24 2003-11-24 Method and apparatus for reactive soilid-gas-plasma deposition

Country Status (4)

Country Link
US (1) US20090057133A1 (sv)
EP (1) EP1692711A1 (sv)
SE (1) SE0303136D0 (sv)
WO (1) WO2005050696A1 (sv)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
DE102006046312B4 (de) * 2006-09-29 2010-01-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzellen mit stabilem, transparentem und leitfähigem Schichtsystem
SE532505C2 (sv) 2007-12-12 2010-02-09 Plasmatrix Materials Ab Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet
US20100193363A1 (en) * 2009-01-30 2010-08-05 Shrisudersan Jayaraman Electrochemical methods of making nanostructures
CN105122569B (zh) 2013-03-15 2019-02-26 贺利氏特种光源美国有限责任公司 用于采用双电源给双磁控管供电的系统和方法
US10000843B2 (en) * 2013-09-13 2018-06-19 DePuy Synthes Products, Inc. Coating process for non-conductive substrates and devices made from the coating process
CN105449117B (zh) * 2015-12-30 2017-09-19 昆山工研院新型平板显示技术中心有限公司 电离装置、oled模组及制备方法和电子设备
CN107301942B (zh) * 2017-07-11 2019-03-08 四川恒创博联科技有限责任公司 一种等离子体改性超滤膜处理系统
CN108757380B (zh) * 2018-05-18 2019-11-19 南京华东电子真空材料有限公司 结构简单便于安装的组合泵
DE102018213534A1 (de) * 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung
CN113544096B (zh) * 2019-02-20 2023-07-28 密歇根州立大学董事会 用于产生非均匀电场以去除流体中极化分子的电极装置
CN112584596B (zh) * 2019-09-30 2022-03-08 中国科学院大连化学物理研究所 一种射频放电等离子体增强吸附速率的装置
CN113764248B (zh) * 2020-06-02 2023-06-20 西华大学 一种金属离子源及其应用和使用方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821207A1 (de) * 1988-06-23 1989-12-28 Leybold Ag Anordnung zum beschichten eines substrats mit dielektrika
US6521106B1 (en) * 1990-01-29 2003-02-18 Novellus Systems, Inc. Collimated deposition apparatus
DE4038497C1 (sv) * 1990-12-03 1992-02-20 Leybold Ag, 6450 Hanau, De
JP2671835B2 (ja) * 1994-10-20 1997-11-05 日本電気株式会社 スパッタ装置とその装置を用いた半導体装置の製造方法
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法
SE519931C2 (sv) * 2000-06-19 2003-04-29 Chemfilt R & D Ab Anordning och förfarande för pulsad, starkt joniserad magnetronsputtering

Also Published As

Publication number Publication date
WO2005050696A1 (en) 2005-06-02
US20090057133A1 (en) 2009-03-05
EP1692711A1 (en) 2006-08-23

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