KR940014908A - 전자기 결합된 평면 플라즈마 장치에서의 산화막 에칭 공정 - Google Patents

전자기 결합된 평면 플라즈마 장치에서의 산화막 에칭 공정 Download PDF

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KR940014908A
KR940014908A KR1019930025436A KR930025436A KR940014908A KR 940014908 A KR940014908 A KR 940014908A KR 1019930025436 A KR1019930025436 A KR 1019930025436A KR 930025436 A KR930025436 A KR 930025436A KR 940014908 A KR940014908 A KR 940014908A
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chamber
silicon
fluorine scavenger
substrate
plasma
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에스. 콜리즈 케네쓰
마크스 제프리
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제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
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    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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    • H01F29/00—Variable transformers or inductances not covered by group H01F21/00
    • H01F29/14—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias
    • H01F2029/143—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias with control winding for generating magnetic bias
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
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    • H01J2237/3345—Problems associated with etching anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

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Abstract

한 벽에 유전체 차폐부를 가지는 챔버와, 상기 챔버의 외부에 그리고 무선 주파수 소스에 결합된 상기 윈도우에 근접한 평면코일을 포함하는 전자기 결합된 평면 플라즈마 제조장치에서, 플루오르 스캐빈저가 상기 챔버 내에 장착되거나 또는 챔버에 추가된다. 실리콘 산화물이 플루오르탄화수소의 플라즈마로 에칭될 경우, 플루오르 스캐빈저는 자유 플루오르 라디칼을 감소시키고, 그럼으로써 선택성 및 에칭의 이방성을 개선시키고, 또한 입자형성을 감소시키는 한편 에칭율을 증가시킨다.

Description

전자기 결합된 평면 플라즈마 장치에서의 산화막 에칭 공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 장치의 단면도,
제2도는 제1도의 장치와 회로의 개략도,
제3도는 제1도의 장치에 의해 제조된 전자기장 측면도.

Claims (17)

  1. 한 단부에 유전체 윈도우를 가지는 챔버와, 챔버에 공급될 플라즈마 전구가스용 포트와, 액세스 포트에 일반적으로 평행하게 고정시키기 위한 상기 챔버내의 기판 지지부와, 상기 챔버 외부 및 상기 유전체 윈도우 근처의 전기전도의 평면코일과, 상기 코일에 고주파 소스를 결합시키기 위한 수단을 포함하는 평면 플라즈마 제조장치에 있어서, 상기 챔버내에 발생된 플라즈마 내 또는 근처에 플루오르 스캐빈저를 설치함을 특징으로 하는 평면 플라즈마 제조장치.
  2. 제1항에 있어서, 상기 플루오르 스캐빈저는 실리콘 또는 실리콘 화합물로 된 소재임을 특징으로 하는 평면 플라즈마 제조장치.
  3. 제2항에 있어서, 상기 플루오르 스캐빈저는 상기 유전체 윈도우 및 상기 기판지지부 사이에서 보통 그들에 평행하게 장착된 실리콘 소재임을 특징으로 하는 평면 플라즈마 제조장치.
  4. 제1항에 있어서, 실리콘 화합물 소재는 상기 유전체 윈도우 및 상기 기판지지부 사이에서 보통 그들에 평행하게 장착됨을 특징으로 하는 평면 플라즈마 제조장치.
  5. 제4항에 있어서, 상기 실리콘 소스는 기판의 외면을 덮는 실리콘 카아바이드 링임을 특징으로 하는 평면 플라즈마 제조장치.
  6. 제1항에 있어서, 상기 플루오르 스캐빈저는 그래파이트로 된 링 또는 실린더임을 특징으로 하는 평면 플라즈마 제조장치.
  7. 제1항에 있어서, 제2 무선주파수 소스가 상기 기판지지부에 연결됨을 특징으로 하는 평면 플라즈마 제조장치.
  8. 기판이 유전체 차폐부에 반드시 평행하도록 상기 차폐부에 고정되게 진공 챔버내에 상기 기판을 장착하고, 상기 기판에 무선주파수 바이어스를 가하고, 상기 챔버에 플루오르탄화수소 에칭가스를 도입하고, 상기 유전체 윈도우 근처의 상기 챔버 외부에 배치된 대략 평면의 코일에 무선 주파수 전류를 가함으로써 상기 가스로 부터 플라즈마를 형성하고, 그리고 상기 챔버내로 플루오르 스캐빈저를 도입시킴으로써, 상기 기상사에 비산소 함유층에 관하여 선택적으로 산소 함유층을 에칭하게 됨을 특징으로 하는 산소 함유층 포함하는 기판처리방법.
  9. 제8항에 있어서, 상기 플루오르 스캐빈저는 실리콘의 고체 소재임을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
  10. 제9항에 있어서, 상기 재료는 상기 기판 및 상기 유전체 차폐부 사이에서 보통 그들에 평행하게 장착됨을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
  11. 제8항에 있어서, 상기 플루오르 스캐빈저는 실리콘 함유 화합물임을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
  12. 제8항에 있어서, 상기 플루오르 스캐빈저는 실리콘 카아바이드 평판임을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
  13. 제11항에 있어서, 상기 실리콘 함유 화합물은 실리콘 함유 가스임을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
  14. 제8항에 있어서, 상기 플루오르 스캐빈저는 탄소 함유 화합물임을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
  15. 제14항에 있어서, 상기 플루오르 스캐빈저는 탄소 부화가스임을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
  16. 제15항에 있어서, 상기 탄소 부화가스는 벤젠 및 아세틸렌으로 구성된 단체로 부터 선택됨을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
  17. 제14항에 있어서, 상기 탄소 함유 화합물은 그래파이트 재료임을 특징으로 하는 산소 함유층을 포함하는 기판 처리 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930025436A 1992-12-01 1993-11-26 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정 KR100281345B1 (ko)

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US7/984,045 1992-12-01

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US (1) US6217785B1 (ko)
EP (2) EP0601468B1 (ko)
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DE (2) DE69332176T2 (ko)
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DE69332176T2 (de) 2003-04-03
DE69332176D1 (de) 2002-09-05
KR100281345B1 (ko) 2001-03-02
DE69317518D1 (de) 1998-04-23
EP0601468A1 (en) 1994-06-15
ES2113464T3 (es) 1998-05-01
JP3422540B2 (ja) 2003-06-30
EP0802560A1 (en) 1997-10-22
EP0601468B1 (en) 1998-03-18
JPH06283473A (ja) 1994-10-07
DE69317518T2 (de) 1998-10-29
EP0802560B1 (en) 2002-07-31

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