DE69317518D1 - Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxyden - Google Patents

Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxyden

Info

Publication number
DE69317518D1
DE69317518D1 DE69317518T DE69317518T DE69317518D1 DE 69317518 D1 DE69317518 D1 DE 69317518D1 DE 69317518 T DE69317518 T DE 69317518T DE 69317518 T DE69317518 T DE 69317518T DE 69317518 D1 DE69317518 D1 DE 69317518D1
Authority
DE
Germany
Prior art keywords
generating
electromagnetically coupled
flat plasma
coupled flat
etching oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE69317518T
Other languages
English (en)
Other versions
DE69317518T2 (de
Inventor
Kenneth S Collins
Jeffrey Marks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25530259&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69317518(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69317518D1 publication Critical patent/DE69317518D1/de
Publication of DE69317518T2 publication Critical patent/DE69317518T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F29/00—Variable transformers or inductances not covered by group H01F21/00
    • H01F29/14—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias
    • H01F2029/143—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias with control winding for generating magnetic bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3345—Problems associated with etching anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
DE69317518T 1992-12-01 1993-12-01 Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxyden Revoked DE69317518T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98404592A 1992-12-01 1992-12-01

Publications (2)

Publication Number Publication Date
DE69317518D1 true DE69317518D1 (de) 1998-04-23
DE69317518T2 DE69317518T2 (de) 1998-10-29

Family

ID=25530259

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69332176T Expired - Fee Related DE69332176T2 (de) 1992-12-01 1993-12-01 Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxiden
DE69317518T Revoked DE69317518T2 (de) 1992-12-01 1993-12-01 Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxyden

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69332176T Expired - Fee Related DE69332176T2 (de) 1992-12-01 1993-12-01 Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxiden

Country Status (6)

Country Link
US (1) US6217785B1 (de)
EP (2) EP0601468B1 (de)
JP (1) JP3422540B2 (de)
KR (1) KR100281345B1 (de)
DE (2) DE69332176T2 (de)
ES (1) ES2113464T3 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US20010054601A1 (en) 1996-05-13 2001-12-27 Jian Ding Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5722668A (en) * 1994-04-29 1998-03-03 Applied Materials, Inc. Protective collar for vacuum seal in a plasma etch reactor
US5580385A (en) * 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US6156663A (en) * 1995-10-03 2000-12-05 Hitachi, Ltd. Method and apparatus for plasma processing
US6214740B1 (en) 1996-01-26 2001-04-10 Matsushita Electronics Corporation Semiconductor manufacturing apparatus
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
DE19606375A1 (de) * 1996-02-21 1997-08-28 Balzers Prozes Systeme Gmbh Plasmaquelle mit eingekoppelten Whistler- oder Helikonwellen
US5951773A (en) * 1996-03-18 1999-09-14 Hyundai Electronics Industries Co., Ltd. Inductively coupled plasma chemical vapor deposition apparatus
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US6534922B2 (en) 1996-09-27 2003-03-18 Surface Technology Systems, Plc Plasma processing apparatus
EP1324371B1 (de) * 1996-09-27 2006-06-07 Surface Technology Systems Plc Plasmabearbeitungsvorrichtung
US6308654B1 (en) 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
DE19933842A1 (de) * 1999-07-20 2001-02-01 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
DE10045793C2 (de) * 2000-09-15 2002-07-18 Zeiss Carl Verfahren zum Strukturieren eines Substrats
US6899785B2 (en) * 2001-11-05 2005-05-31 International Business Machines Corporation Method of stabilizing oxide etch and chamber performance using seasoning
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
JP5297048B2 (ja) * 2008-01-28 2013-09-25 三菱重工業株式会社 プラズマ処理方法及びプラズマ処理装置
JP5400434B2 (ja) * 2009-03-11 2014-01-29 株式会社イー・エム・ディー プラズマ処理装置
JP4621287B2 (ja) * 2009-03-11 2011-01-26 株式会社イー・エム・ディー プラズマ処理装置
CN112023844A (zh) * 2020-08-12 2020-12-04 陕西科技大学 一种用于材料制备的水热感应加热法及其制备系统
KR20220040804A (ko) 2020-09-24 2022-03-31 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155732A (en) * 1981-03-20 1982-09-25 Sharp Corp Dry etching
US4350578A (en) * 1981-05-11 1982-09-21 International Business Machines Corporation Cathode for etching
US4427516A (en) 1981-08-24 1984-01-24 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
JPS6020163A (ja) * 1983-07-14 1985-02-01 Mitsubishi Electric Corp 合成開口レ−ダ
JPS60201632A (ja) 1984-03-27 1985-10-12 Anelva Corp ドライエツチング装置
US4855017A (en) 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
US4807016A (en) * 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
US4711698A (en) 1985-07-15 1987-12-08 Texas Instruments Incorporated Silicon oxide thin film etching process
US4675073A (en) 1986-03-07 1987-06-23 Texas Instruments Incorporated Tin etch process
JPS62254428A (ja) * 1986-04-28 1987-11-06 Nippon Telegr & Teleph Corp <Ntt> 反応性スパツタエツチング方法と反応性スパツタエツチング装置
US4756810A (en) 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786359A (en) 1987-06-24 1988-11-22 Tegal Corporation Xenon enhanced plasma etch
JP2619395B2 (ja) * 1987-07-10 1997-06-11 株式会社日立製作所 プラズマ処理方法
JPH0741153Y2 (ja) 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
US4918031A (en) 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
US4990229A (en) 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5085727A (en) * 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5169487A (en) * 1990-08-27 1992-12-08 Micron Technology, Inc. Anisotropic etch method
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US5176790A (en) * 1991-09-25 1993-01-05 Applied Materials, Inc. Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal
EP0552491B1 (de) * 1992-01-24 1998-07-15 Applied Materials, Inc. Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
US5423945A (en) * 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride

Also Published As

Publication number Publication date
KR100281345B1 (ko) 2001-03-02
EP0601468B1 (de) 1998-03-18
JP3422540B2 (ja) 2003-06-30
DE69317518T2 (de) 1998-10-29
EP0601468A1 (de) 1994-06-15
EP0802560B1 (de) 2002-07-31
US6217785B1 (en) 2001-04-17
EP0802560A1 (de) 1997-10-22
JPH06283473A (ja) 1994-10-07
DE69332176T2 (de) 2003-04-03
KR940014908A (ko) 1994-07-19
ES2113464T3 (es) 1998-05-01
DE69332176D1 (de) 2002-09-05

Similar Documents

Publication Publication Date Title
DE69332176D1 (de) Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxiden
DE68927037D1 (de) Verfahren und Vorrichtung zur Erzeugung von Plasma
DE69017744D1 (de) Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas.
DE3675092D1 (de) Verfahren und apparat zur mikrowellenanregung eines plasmas bei der elektronen-zyklotronen-resonanz.
DE69328235D1 (de) Verfahren und Vorrichtung zur Reinigung von Abgas
DE69323168D1 (de) Verfahren und Vorrichtung mittels optischer Emission zur Endpunktdetektion von Plasmaätzverfahren
DE69329868D1 (de) Vorrichtung und Verfahren zur Erzeugung chaotischer Signale
DE59308435D1 (de) Vorrichtung zur Erzeugung von Mikrowellenplasmen
DE69327069D1 (de) Vorrichtung und Verfahren zur Plasmaerzeugung
DE69306007D1 (de) Verfahren und Vorrichtung zur Plasmaerzeugung und Verfahren zur Halbleiter-Bearbeitung
ATE246956T1 (de) Vorrichtung und verfahren zur erzeugung von gasbläschen optimaler grösse
DE69224514D1 (de) Verfahren und Vorrichtung zur Erzeugung eines Bildes
DE68907891D1 (de) Vorrichtung und verfahren zur kuehlung eines plasmabogens.
DE69421963D1 (de) Nachbearbeitungsverfahren und Vorrichtung zur Erzeugung von Zuverlässigkeitsymbolen
DE69227313D1 (de) Verfahren und vorrichtung zur behandlung von bauteilen in einem gasentladungsplasma
AT388814B (de) Verfahren und vorrichtung zum erzeugen eines hf-induzierten edelgasplasmas
DE69218271D1 (de) Verfahren und Vorrichtung zur Plasmaätzung von Diamant
DE69408957D1 (de) Vorrichtung und Verfahren zur Reinigung von Abgas
DE69528266D1 (de) Verfahren und vorrichtung zum kontrollierten aufbringen von partikeln auf wafers
DE69423857D1 (de) Verfahren und Vorrichtung zur Reinigung von Abgas
DE69123528D1 (de) Gerät und Verfahren unter Verwendung eines durch Mikrowellen erzeugten Plasmas
DE69528743D1 (de) Verfahren und Vorrichtung zur Plasmabehandlung
DE59808697D1 (de) Verfahren und vorrichtung zum erzeugen eines plasmas
DE69319525D1 (de) Verfahren und Vorrichtung zur Erzeugung eines überlappenden Bildgebietes
DE68917550D1 (de) Verfahren und Vorrichtung zur Plasmabehandlung.

Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation