DE69317518T2 - Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxyden - Google Patents
Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von OxydenInfo
- Publication number
- DE69317518T2 DE69317518T2 DE69317518T DE69317518T DE69317518T2 DE 69317518 T2 DE69317518 T2 DE 69317518T2 DE 69317518 T DE69317518 T DE 69317518T DE 69317518 T DE69317518 T DE 69317518T DE 69317518 T2 DE69317518 T2 DE 69317518T2
- Authority
- DE
- Germany
- Prior art keywords
- generating
- electromagnetically coupled
- flat plasma
- coupled flat
- etching oxides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Revoked
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F29/00—Variable transformers or inductances not covered by group H01F21/00
- H01F29/14—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias
- H01F2029/143—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias with control winding for generating magnetic bias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3345—Problems associated with etching anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3346—Selectivity
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Public Health (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98404592A | 1992-12-01 | 1992-12-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69317518D1 DE69317518D1 (de) | 1998-04-23 |
DE69317518T2 true DE69317518T2 (de) | 1998-10-29 |
Family
ID=25530259
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332176T Expired - Fee Related DE69332176T2 (de) | 1992-12-01 | 1993-12-01 | Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxiden |
DE69317518T Revoked DE69317518T2 (de) | 1992-12-01 | 1993-12-01 | Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxyden |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332176T Expired - Fee Related DE69332176T2 (de) | 1992-12-01 | 1993-12-01 | Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxiden |
Country Status (6)
Country | Link |
---|---|
US (1) | US6217785B1 (de) |
EP (2) | EP0601468B1 (de) |
JP (1) | JP3422540B2 (de) |
KR (1) | KR100281345B1 (de) |
DE (2) | DE69332176T2 (de) |
ES (1) | ES2113464T3 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6238588B1 (en) | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
US6024826A (en) * | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
US20010054601A1 (en) | 1996-05-13 | 2001-12-27 | Jian Ding | Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material |
US6063233A (en) | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6090303A (en) * | 1991-06-27 | 2000-07-18 | Applied Materials, Inc. | Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
US6165311A (en) | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6514376B1 (en) | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6036877A (en) | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
US5477975A (en) * | 1993-10-15 | 1995-12-26 | Applied Materials Inc | Plasma etch apparatus with heated scavenging surfaces |
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
US5722668A (en) * | 1994-04-29 | 1998-03-03 | Applied Materials, Inc. | Protective collar for vacuum seal in a plasma etch reactor |
US5580385A (en) * | 1994-06-30 | 1996-12-03 | Texas Instruments, Incorporated | Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber |
TW279240B (en) | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
US6156663A (en) * | 1995-10-03 | 2000-12-05 | Hitachi, Ltd. | Method and apparatus for plasma processing |
US6214740B1 (en) | 1996-01-26 | 2001-04-10 | Matsushita Electronics Corporation | Semiconductor manufacturing apparatus |
US6036878A (en) | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
DE19606375A1 (de) * | 1996-02-21 | 1997-08-28 | Balzers Prozes Systeme Gmbh | Plasmaquelle mit eingekoppelten Whistler- oder Helikonwellen |
US5951773A (en) * | 1996-03-18 | 1999-09-14 | Hyundai Electronics Industries Co., Ltd. | Inductively coupled plasma chemical vapor deposition apparatus |
US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
US6534922B2 (en) | 1996-09-27 | 2003-03-18 | Surface Technology Systems, Plc | Plasma processing apparatus |
EP0838839B1 (de) * | 1996-09-27 | 2008-05-21 | Surface Technology Systems Plc | Plasmabearbeitungsgerät |
US6308654B1 (en) | 1996-10-18 | 2001-10-30 | Applied Materials, Inc. | Inductively coupled parallel-plate plasma reactor with a conical dome |
US6132551A (en) * | 1997-09-20 | 2000-10-17 | Applied Materials, Inc. | Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil |
US6028285A (en) * | 1997-11-19 | 2000-02-22 | Board Of Regents, The University Of Texas System | High density plasma source for semiconductor processing |
US6589437B1 (en) | 1999-03-05 | 2003-07-08 | Applied Materials, Inc. | Active species control with time-modulated plasma |
DE19933842A1 (de) * | 1999-07-20 | 2001-02-01 | Bosch Gmbh Robert | Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas |
US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
DE10045793C2 (de) | 2000-09-15 | 2002-07-18 | Zeiss Carl | Verfahren zum Strukturieren eines Substrats |
US6899785B2 (en) * | 2001-11-05 | 2005-05-31 | International Business Machines Corporation | Method of stabilizing oxide etch and chamber performance using seasoning |
US20040171260A1 (en) * | 2002-06-14 | 2004-09-02 | Lam Research Corporation | Line edge roughness control |
US7547635B2 (en) * | 2002-06-14 | 2009-06-16 | Lam Research Corporation | Process for etching dielectric films with improved resist and/or etch profile characteristics |
JP5297048B2 (ja) * | 2008-01-28 | 2013-09-25 | 三菱重工業株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP5400434B2 (ja) * | 2009-03-11 | 2014-01-29 | 株式会社イー・エム・ディー | プラズマ処理装置 |
JP4621287B2 (ja) * | 2009-03-11 | 2011-01-26 | 株式会社イー・エム・ディー | プラズマ処理装置 |
CN112023844A (zh) * | 2020-08-12 | 2020-12-04 | 陕西科技大学 | 一种用于材料制备的水热感应加热法及其制备系统 |
KR20220040804A (ko) | 2020-09-24 | 2022-03-31 | 삼성전자주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57155732A (en) * | 1981-03-20 | 1982-09-25 | Sharp Corp | Dry etching |
US4350578A (en) * | 1981-05-11 | 1982-09-21 | International Business Machines Corporation | Cathode for etching |
US4427516A (en) | 1981-08-24 | 1984-01-24 | Bell Telephone Laboratories, Incorporated | Apparatus and method for plasma-assisted etching of wafers |
JPS6020163A (ja) * | 1983-07-14 | 1985-02-01 | Mitsubishi Electric Corp | 合成開口レ−ダ |
JPS60201632A (ja) | 1984-03-27 | 1985-10-12 | Anelva Corp | ドライエツチング装置 |
US4855017A (en) | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US4793975A (en) * | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
US4807016A (en) * | 1985-07-15 | 1989-02-21 | Texas Instruments Incorporated | Dry etch of phosphosilicate glass with selectivity to undoped oxide |
US4711698A (en) | 1985-07-15 | 1987-12-08 | Texas Instruments Incorporated | Silicon oxide thin film etching process |
US4675073A (en) | 1986-03-07 | 1987-06-23 | Texas Instruments Incorporated | Tin etch process |
JPS62254428A (ja) * | 1986-04-28 | 1987-11-06 | Nippon Telegr & Teleph Corp <Ntt> | 反応性スパツタエツチング方法と反応性スパツタエツチング装置 |
US4756810A (en) | 1986-12-04 | 1988-07-12 | Machine Technology, Inc. | Deposition and planarizing methods and apparatus |
US4793897A (en) | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
US4786359A (en) | 1987-06-24 | 1988-11-22 | Tegal Corporation | Xenon enhanced plasma etch |
JP2619395B2 (ja) * | 1987-07-10 | 1997-06-11 | 株式会社日立製作所 | プラズマ処理方法 |
JPH0741153Y2 (ja) | 1987-10-26 | 1995-09-20 | 東京応化工業株式会社 | 試料処理用電極 |
US4918031A (en) | 1988-12-28 | 1990-04-17 | American Telephone And Telegraph Company,At&T Bell Laboratories | Processes depending on plasma generation using a helical resonator |
US4990229A (en) | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
US5085727A (en) * | 1990-05-21 | 1992-02-04 | Applied Materials, Inc. | Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion |
US5169487A (en) * | 1990-08-27 | 1992-12-08 | Micron Technology, Inc. | Anisotropic etch method |
US6090303A (en) * | 1991-06-27 | 2000-07-18 | Applied Materials, Inc. | Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
US5176790A (en) * | 1991-09-25 | 1993-01-05 | Applied Materials, Inc. | Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal |
DE69226253T2 (de) * | 1992-01-24 | 1998-12-17 | Applied Materials Inc | Plasmaätzverfahren und Reaktor zur Plasmabearbeitung |
US5423945A (en) * | 1992-09-08 | 1995-06-13 | Applied Materials, Inc. | Selectivity for etching an oxide over a nitride |
-
1993
- 1993-11-26 KR KR1019930025436A patent/KR100281345B1/ko not_active IP Right Cessation
- 1993-12-01 EP EP93119391A patent/EP0601468B1/de not_active Revoked
- 1993-12-01 EP EP97109781A patent/EP0802560B1/de not_active Revoked
- 1993-12-01 JP JP30196793A patent/JP3422540B2/ja not_active Expired - Fee Related
- 1993-12-01 DE DE69332176T patent/DE69332176T2/de not_active Expired - Fee Related
- 1993-12-01 DE DE69317518T patent/DE69317518T2/de not_active Revoked
- 1993-12-01 ES ES93119391T patent/ES2113464T3/es not_active Expired - Lifetime
-
1996
- 1996-12-09 US US08/762,464 patent/US6217785B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6217785B1 (en) | 2001-04-17 |
KR940014908A (ko) | 1994-07-19 |
DE69332176T2 (de) | 2003-04-03 |
DE69332176D1 (de) | 2002-09-05 |
KR100281345B1 (ko) | 2001-03-02 |
DE69317518D1 (de) | 1998-04-23 |
EP0601468A1 (de) | 1994-06-15 |
ES2113464T3 (es) | 1998-05-01 |
JP3422540B2 (ja) | 2003-06-30 |
EP0802560A1 (de) | 1997-10-22 |
EP0601468B1 (de) | 1998-03-18 |
JPH06283473A (ja) | 1994-10-07 |
EP0802560B1 (de) | 2002-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8331 | Complete revocation |