ES2096009T3 - Dispositivo para el recubrimiento de un sustrato, en especial con capas no conductoras electricamente. - Google Patents
Dispositivo para el recubrimiento de un sustrato, en especial con capas no conductoras electricamente.Info
- Publication number
- ES2096009T3 ES2096009T3 ES92119074T ES92119074T ES2096009T3 ES 2096009 T3 ES2096009 T3 ES 2096009T3 ES 92119074 T ES92119074 T ES 92119074T ES 92119074 T ES92119074 T ES 92119074T ES 2096009 T3 ES2096009 T3 ES 2096009T3
- Authority
- ES
- Spain
- Prior art keywords
- coating
- substrate
- conductive layers
- electrically conductive
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
EN UN PROCESO Y UN DISPOSITIVO PARA EL RECUBRIMIENTO DE UN SUBSTRATO (26) CON CAPAS NO CONDUCTORAS ELECTRICAMENTE DE UN OBJETIVO (25) CAPAZ DE CONDUCCION ELECTRICA EN ATMOSFERA REACTIVA (POR EJEMPLO OXIDANTE), CON UN CATODO (17) DISPUESTO EN UNA CAMARA (16) DE RECUBRIMIENTO EVACUABLE, QUE ACTUA CONJUNTAMENTE DE FORMA ELECTRICA CON EL OBJETIVO (25), EL CATODO (17) ESTA CONECTADO POR MOTIVOS DE UNA DEPRESION DEL ARCO EN UNA FUENTE (21) DE CORRIENTE DC Y EQUIPADO CON LA AYUDA DE UN CIRCUITO (22 O 3 HASTA 15) ADICIONALMENTE ADAPTADO DE FORMA PERIODICA PARA TENSION DE TIEMPO CORTO APLICABLE SOBRE UN POTENCIAL POSITIVO, CON LO QUE LA FRECUENCIA DE ESTA INVERSION DE POLOS PERIODICA QUE DEPENDE DE LA CAPA DE SEPARACION ES AJUSTABLE.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4202425A DE4202425C2 (de) | 1992-01-29 | 1992-01-29 | Verfahren und Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2096009T3 true ES2096009T3 (es) | 1997-03-01 |
Family
ID=6450487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92119074T Expired - Lifetime ES2096009T3 (es) | 1992-01-29 | 1992-11-06 | Dispositivo para el recubrimiento de un sustrato, en especial con capas no conductoras electricamente. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5286360A (es) |
EP (1) | EP0553410B1 (es) |
JP (1) | JP2695362B2 (es) |
DE (2) | DE4202425C2 (es) |
ES (1) | ES2096009T3 (es) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5525199A (en) * | 1991-11-13 | 1996-06-11 | Optical Corporation Of America | Low pressure reactive magnetron sputtering apparatus and method |
CH689767A5 (de) | 1992-03-24 | 1999-10-15 | Balzers Hochvakuum | Verfahren zur Werkstueckbehandlung in einer Vakuumatmosphaere und Vakuumbehandlungsanlage. |
EP0636285B1 (en) * | 1992-04-16 | 1996-09-04 | Advanced Energy Industries, Inc. | Stabilizer for switch-mode powered rf plasma processing |
DE69322404T2 (de) * | 1992-09-30 | 1999-04-29 | Advanced Energy Ind Inc Fort C | Topographisch genaues duennfilm-beschichtungssystem |
DE4233720C2 (de) * | 1992-10-07 | 2001-05-17 | Leybold Ag | Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen |
US5718813A (en) * | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
US5427669A (en) * | 1992-12-30 | 1995-06-27 | Advanced Energy Industries, Inc. | Thin film DC plasma processing system |
US6217717B1 (en) | 1992-12-30 | 2001-04-17 | Advanced Energy Industries, Inc. | Periodically clearing thin film plasma processing system |
DE69431573T2 (de) * | 1993-07-28 | 2003-06-12 | Asahi Glass Co Ltd | Verfahren zur Herstellung von Schichten |
DE69426003T2 (de) * | 1993-07-28 | 2001-05-17 | Asahi Glass Co Ltd | Verfahren und Vorrichtung zur Kathodenzerstäubung |
JPH07243039A (ja) * | 1994-03-02 | 1995-09-19 | Chugai Ro Co Ltd | 直流マグネトロン型反応性スパッタ法 |
US5651865A (en) * | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
DE4438463C1 (de) * | 1994-10-27 | 1996-02-15 | Fraunhofer Ges Forschung | Verfahren und Schaltung zur bipolaren pulsförmigen Energieeinspeisung in Niederdruckplasmen |
DE4441206C2 (de) * | 1994-11-19 | 1996-09-26 | Leybold Ag | Einrichtung für die Unterdrückung von Überschlägen in Kathoden-Zerstäubungseinrichtungen |
US5584972A (en) * | 1995-02-01 | 1996-12-17 | Sony Corporation | Plasma noise and arcing suppressor apparatus and method for sputter deposition |
WO1996031899A1 (en) | 1995-04-07 | 1996-10-10 | Advanced Energy Industries, Inc. | Adjustable energy quantum thin film plasma processing system |
US5576939A (en) * | 1995-05-05 | 1996-11-19 | Drummond; Geoffrey N. | Enhanced thin film DC plasma power supply |
US5616224A (en) * | 1995-05-09 | 1997-04-01 | Deposition Sciences, Inc. | Apparatus for reducing the intensity and frequency of arcs which occur during a sputtering process |
US5812405A (en) * | 1995-05-23 | 1998-09-22 | Viratec Thin Films, Inc. | Three variable optimization system for thin film coating design |
US5584974A (en) * | 1995-10-20 | 1996-12-17 | Eni | Arc control and switching element protection for pulsed dc cathode sputtering power supply |
US5830336A (en) * | 1995-12-05 | 1998-11-03 | Minnesota Mining And Manufacturing Company | Sputtering of lithium |
DE19546826C1 (de) * | 1995-12-15 | 1997-04-03 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zur Vorbehandlung von Substraten |
DE29520685U1 (de) * | 1995-12-29 | 1997-04-24 | Strämke, Siegfried, Dr.-Ing., 52538 Selfkant | Schaltungsanordnung zum Betrieb einer Glimmentladungsstrecke |
US5917286A (en) | 1996-05-08 | 1999-06-29 | Advanced Energy Industries, Inc. | Pulsed direct current power supply configurations for generating plasmas |
CA2205817C (en) * | 1996-05-24 | 2004-04-06 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
US5682067A (en) * | 1996-06-21 | 1997-10-28 | Sierra Applied Sciences, Inc. | Circuit for reversing polarity on electrodes |
US5882492A (en) * | 1996-06-21 | 1999-03-16 | Sierra Applied Sciences, Inc. | A.C. plasma processing system |
WO1998013532A1 (en) * | 1996-09-24 | 1998-04-02 | Deposition Sciences, Inc. | A multiple target arrangement for decreasing the intensity and severity of arcing in dc sputtering |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
DE19651811B4 (de) * | 1996-12-13 | 2006-08-31 | Unaxis Deutschland Holding Gmbh | Vorrichtung zum Belegen eines Substrats mit dünnen Schichten |
DE19702187C2 (de) * | 1997-01-23 | 2002-06-27 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zum Betreiben von Magnetronentladungen |
DE69841671D1 (de) * | 1997-02-20 | 2010-07-01 | Shibaura Mechatronics Corp | Stromversorgungseinheit für sputtervorrichtung |
SE9704607D0 (sv) | 1997-12-09 | 1997-12-09 | Chemfilt R & D Ab | A method and apparatus for magnetically enhanced sputtering |
US5910886A (en) * | 1997-11-07 | 1999-06-08 | Sierra Applied Sciences, Inc. | Phase-shift power supply |
US5993613A (en) * | 1997-11-07 | 1999-11-30 | Sierra Applied Sciences, Inc. | Method and apparatus for periodic polarity reversal during an active state |
US5889391A (en) * | 1997-11-07 | 1999-03-30 | Sierra Applied Sciences, Inc. | Power supply having combined regulator and pulsing circuits |
US6011704A (en) * | 1997-11-07 | 2000-01-04 | Sierra Applied Sciences, Inc. | Auto-ranging power supply |
WO1999058743A1 (fr) * | 1998-05-08 | 1999-11-18 | Mitsubishi Denki Kabushiki Kaisha | Unite source d'alimentation en energie pour traitement de surface par decharges |
DE19826297A1 (de) * | 1998-06-12 | 1999-12-16 | Aurion Anlagentechnik Gmbh | Vorrichtung und Verfahren zur Vermeidung von Überschlägen bei Sputterprozessen durch eine aktive Arcunterdrückung |
DE19937621C2 (de) * | 1999-08-10 | 2001-09-13 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zur pulsförmigen Energiezuführung für ein Niederdruckplasma und deren Anwendung |
JP2004507485A (ja) | 2000-09-01 | 2004-03-11 | ラーソン,マーカス | 動的膨張挙動を有する肺界面活性組成物 |
US6495000B1 (en) * | 2001-07-16 | 2002-12-17 | Sharp Laboratories Of America, Inc. | System and method for DC sputtering oxide films with a finned anode |
WO2004003968A2 (en) * | 2002-06-28 | 2004-01-08 | Tokyo Electron Limited | Method and system for arc suppression in a plasma processing system |
US6808607B2 (en) * | 2002-09-25 | 2004-10-26 | Advanced Energy Industries, Inc. | High peak power plasma pulsed supply with arc handling |
US7147759B2 (en) * | 2002-09-30 | 2006-12-12 | Zond, Inc. | High-power pulsed magnetron sputtering |
US6853142B2 (en) * | 2002-11-04 | 2005-02-08 | Zond, Inc. | Methods and apparatus for generating high-density plasma |
US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
US20040112735A1 (en) * | 2002-12-17 | 2004-06-17 | Applied Materials, Inc. | Pulsed magnetron for sputter deposition |
US6805779B2 (en) * | 2003-03-21 | 2004-10-19 | Zond, Inc. | Plasma generation using multi-step ionization |
US6903511B2 (en) * | 2003-05-06 | 2005-06-07 | Zond, Inc. | Generation of uniformly-distributed plasma |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US6943317B1 (en) * | 2004-07-02 | 2005-09-13 | Advanced Energy Industries, Inc. | Apparatus and method for fast arc extinction with early shunting of arc current in plasma |
EP1803142A1 (en) * | 2004-09-24 | 2007-07-04 | Zond, Inc. | Apparatus for generating high-current electrical discharges |
SE0402644D0 (sv) * | 2004-11-02 | 2004-11-02 | Biocell Ab | Method and apparatus for producing electric discharges |
US7305311B2 (en) * | 2005-04-22 | 2007-12-04 | Advanced Energy Industries, Inc. | Arc detection and handling in radio frequency power applications |
US20060283702A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Random pulsed DC power supply |
US20080197015A1 (en) * | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
US8217299B2 (en) * | 2007-02-22 | 2012-07-10 | Advanced Energy Industries, Inc. | Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch |
EP2075823B1 (en) * | 2007-12-24 | 2012-02-29 | Huettinger Electronic Sp. z o. o | Current change limiting device |
WO2009134756A1 (en) * | 2008-04-29 | 2009-11-05 | Cirrus Logic, Inc. | Cascaded switching power converter for coupling a photovoltaic energy source to power mains |
US9782949B2 (en) | 2008-05-30 | 2017-10-10 | Corning Incorporated | Glass laminated articles and layered articles |
US8044594B2 (en) * | 2008-07-31 | 2011-10-25 | Advanced Energy Industries, Inc. | Power supply ignition system and method |
US8395078B2 (en) | 2008-12-05 | 2013-03-12 | Advanced Energy Industries, Inc | Arc recovery with over-voltage protection for plasma-chamber power supplies |
PL2790205T3 (pl) * | 2009-02-17 | 2018-10-31 | Solvix Gmbh | Urządzenie zasilające do obróbki plazmowej |
DE102009002684B4 (de) * | 2009-04-28 | 2013-12-24 | TRUMPF Hüttinger GmbH + Co. KG | Verfahren zur Leistungsversorgung einer Plasmalast und Plasmaversorgungseinrichtung zu seiner Durchführung |
DE102010031568B4 (de) | 2010-07-20 | 2014-12-11 | TRUMPF Hüttinger GmbH + Co. KG | Arclöschanordnung und Verfahren zum Löschen von Arcs |
US8552665B2 (en) | 2010-08-20 | 2013-10-08 | Advanced Energy Industries, Inc. | Proactive arc management of a plasma load |
AT513190B9 (de) | 2012-08-08 | 2014-05-15 | Berndorf Hueck Band Und Pressblechtechnik Gmbh | Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs |
WO2014036169A1 (en) * | 2012-08-31 | 2014-03-06 | Advanced Energy Industries, Inc. | Arc management with voltage reversal and improved recovery |
EP3945541A1 (en) * | 2020-07-29 | 2022-02-02 | TRUMPF Huettinger Sp. Z o. o. | Pulsing assembly, power supply arrangement and method using the assembly |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
JP2613201B2 (ja) * | 1987-01-23 | 1997-05-21 | 株式会社日立製作所 | スパツタリング方法 |
DE3919147C2 (de) * | 1989-06-12 | 1998-01-15 | Leybold Ag | Verfahren zum Beschichten eines Kunststoffsubstrats mit Aluminium |
JPH0356671A (ja) * | 1989-07-21 | 1991-03-12 | Fujitsu Ltd | スパッタリング装置 |
DE3929695C2 (de) * | 1989-09-07 | 1996-12-19 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats |
DE4010495C2 (de) * | 1990-03-31 | 1997-07-31 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats mit Werkstoffen, beispielweise mit Metallen |
DE4136655C2 (de) * | 1990-12-31 | 2001-05-17 | Leybold Ag | Vorrichtung zum reaktiven Beschichten eines Substrats |
DE4042289A1 (de) * | 1990-12-31 | 1992-07-02 | Leybold Ag | Verfahren und vorrichtung zum reaktiven beschichten eines substrats |
DE4127504A1 (de) * | 1991-08-20 | 1993-02-25 | Leybold Ag | Einrichtung zur unterdrueckung von lichtboegen |
DE4138793C2 (de) * | 1991-11-26 | 2001-03-01 | Leybold Ag | Verfahren und Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten |
DE4138794A1 (de) * | 1991-11-26 | 1993-05-27 | Leybold Ag | Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten |
-
1992
- 1992-01-29 DE DE4202425A patent/DE4202425C2/de not_active Expired - Lifetime
- 1992-07-07 US US07/909,591 patent/US5286360A/en not_active Expired - Lifetime
- 1992-11-06 ES ES92119074T patent/ES2096009T3/es not_active Expired - Lifetime
- 1992-11-06 EP EP92119074A patent/EP0553410B1/de not_active Expired - Lifetime
- 1992-11-06 DE DE59207812T patent/DE59207812D1/de not_active Expired - Lifetime
-
1993
- 1993-01-29 JP JP5013345A patent/JP2695362B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0553410B1 (de) | 1997-01-02 |
JP2695362B2 (ja) | 1997-12-24 |
US5286360A (en) | 1994-02-15 |
JPH05311433A (ja) | 1993-11-22 |
DE59207812D1 (de) | 1997-02-13 |
DE4202425A1 (de) | 1993-08-05 |
EP0553410A1 (de) | 1993-08-04 |
DE4202425C2 (de) | 1997-07-17 |
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