DE69322404T2 - Topographisch genaues duennfilm-beschichtungssystem - Google Patents

Topographisch genaues duennfilm-beschichtungssystem

Info

Publication number
DE69322404T2
DE69322404T2 DE69322404T DE69322404T DE69322404T2 DE 69322404 T2 DE69322404 T2 DE 69322404T2 DE 69322404 T DE69322404 T DE 69322404T DE 69322404 T DE69322404 T DE 69322404T DE 69322404 T2 DE69322404 T2 DE 69322404T2
Authority
DE
Germany
Prior art keywords
thin film
film coating
coating system
accurate thin
topographically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69322404T
Other languages
English (en)
Other versions
DE69322404D1 (de
Inventor
Manabu Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Energy Industries Inc
Original Assignee
Advanced Energy Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Energy Industries Inc filed Critical Advanced Energy Industries Inc
Publication of DE69322404D1 publication Critical patent/DE69322404D1/de
Application granted granted Critical
Publication of DE69322404T2 publication Critical patent/DE69322404T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69322404T 1992-09-30 1993-09-29 Topographisch genaues duennfilm-beschichtungssystem Expired - Fee Related DE69322404T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95415192A 1992-09-30 1992-09-30
PCT/US1993/009238 WO1994008067A1 (en) 1992-09-30 1993-09-29 Topographically precise thin film coating system

Publications (2)

Publication Number Publication Date
DE69322404D1 DE69322404D1 (de) 1999-01-14
DE69322404T2 true DE69322404T2 (de) 1999-04-29

Family

ID=25495005

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69322404T Expired - Fee Related DE69322404T2 (de) 1992-09-30 1993-09-29 Topographisch genaues duennfilm-beschichtungssystem

Country Status (5)

Country Link
US (2) US5645698A (de)
EP (1) EP0663019B1 (de)
JP (1) JP3631246B2 (de)
DE (1) DE69322404T2 (de)
WO (1) WO1994008067A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1250471A1 (de) * 2000-01-18 2002-10-23 Unaxis Balzers Aktiengesellschaft Sputterkammer sowie vakuumtransportkammer und vakuumbehandlungsanlagen mit solchen kammern
CN103774111A (zh) * 2014-02-25 2014-05-07 南华大学 一种实现高功率脉冲和大电流磁控溅射镀膜功能的电路设备及控制方法

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DE69322404T2 (de) * 1992-09-30 1999-04-29 Advanced Energy Ind Inc Fort C Topographisch genaues duennfilm-beschichtungssystem
US6217717B1 (en) 1992-12-30 2001-04-17 Advanced Energy Industries, Inc. Periodically clearing thin film plasma processing system
US5535906A (en) * 1995-01-30 1996-07-16 Advanced Energy Industries, Inc. Multi-phase DC plasma processing system
WO1996031899A1 (en) * 1995-04-07 1996-10-10 Advanced Energy Industries, Inc. Adjustable energy quantum thin film plasma processing system
JP3096258B2 (ja) * 1997-07-18 2000-10-10 芝浦メカトロニクス株式会社 毎葉式マグネトロンスパッタ装置
JP2002533868A (ja) 1997-10-14 2002-10-08 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド 早い電圧増加によるプラズマ点火を目的としたシステム
WO2000063459A1 (en) * 1999-04-17 2000-10-26 Advanced Energy Industries, Inc. Method and apparatus for deposition of diamond like carbon
DE19922538A1 (de) 1999-05-10 2000-11-16 Schuelke & Mayr Gmbh Flüssig-Konzentrat zur Konservierung von Kosmetika
US6524455B1 (en) 2000-10-04 2003-02-25 Eni Technology, Inc. Sputtering apparatus using passive arc control system and method
US20040112735A1 (en) * 2002-12-17 2004-06-17 Applied Materials, Inc. Pulsed magnetron for sputter deposition
US6995545B2 (en) * 2003-08-18 2006-02-07 Mks Instruments, Inc. Control system for a sputtering system
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US20060066248A1 (en) * 2004-09-24 2006-03-30 Zond, Inc. Apparatus for generating high current electrical discharges
US6943317B1 (en) 2004-07-02 2005-09-13 Advanced Energy Industries, Inc. Apparatus and method for fast arc extinction with early shunting of arc current in plasma
US9997338B2 (en) * 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
US7305311B2 (en) * 2005-04-22 2007-12-04 Advanced Energy Industries, Inc. Arc detection and handling in radio frequency power applications
US7514935B2 (en) * 2006-09-13 2009-04-07 Advanced Energy Industries, Inc. System and method for managing power supplied to a plasma chamber
US8217299B2 (en) * 2007-02-22 2012-07-10 Advanced Energy Industries, Inc. Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
EP1995818A1 (de) 2007-05-12 2008-11-26 Huettinger Electronic Sp. z o. o Schaltung und Verfahren zur Reduzierung der in einer Zuleitungsinduktivität gespeicherten elektrischen Energie zur schnellen Plasmalichtbogenlöschung
JP2009074118A (ja) * 2007-09-19 2009-04-09 Fuji Electric Device Technology Co Ltd 保護層形成装置
EP2075823B1 (de) * 2007-12-24 2012-02-29 Huettinger Electronic Sp. z o. o Stromänderungsbegrenzungsvorrichtung
WO2009134756A1 (en) * 2008-04-29 2009-11-05 Cirrus Logic, Inc. Cascaded switching power converter for coupling a photovoltaic energy source to power mains
US8044594B2 (en) * 2008-07-31 2011-10-25 Advanced Energy Industries, Inc. Power supply ignition system and method
US8395078B2 (en) 2008-12-05 2013-03-12 Advanced Energy Industries, Inc Arc recovery with over-voltage protection for plasma-chamber power supplies
EP2648209B1 (de) 2009-02-17 2018-01-03 Solvix GmbH Energieversorgungsvorrichtung zur Plasmaverarbeitung
US8552665B2 (en) 2010-08-20 2013-10-08 Advanced Energy Industries, Inc. Proactive arc management of a plasma load
WO2015161289A1 (en) 2014-04-18 2015-10-22 Maxwell Technologies, Inc. Dry energy storage device electrode and methods of making the same
US20180040461A1 (en) 2016-08-02 2018-02-08 Advanced Energy Industries, Inc. Application of diode box to reduce crazing in glass coatings

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DE69322404T2 (de) * 1992-09-30 1999-04-29 Advanced Energy Ind Inc Fort C Topographisch genaues duennfilm-beschichtungssystem
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1250471A1 (de) * 2000-01-18 2002-10-23 Unaxis Balzers Aktiengesellschaft Sputterkammer sowie vakuumtransportkammer und vakuumbehandlungsanlagen mit solchen kammern
CN103774111A (zh) * 2014-02-25 2014-05-07 南华大学 一种实现高功率脉冲和大电流磁控溅射镀膜功能的电路设备及控制方法
CN103774111B (zh) * 2014-02-25 2016-01-13 南华大学 一种实现高功率脉冲和大电流磁控溅射镀膜功能的电路设备及控制方法

Also Published As

Publication number Publication date
JPH08502320A (ja) 1996-03-12
WO1994008067A1 (en) 1994-04-14
EP0663019B1 (de) 1998-12-02
JP3631246B2 (ja) 2005-03-23
US6120656A (en) 2000-09-19
EP0663019A1 (de) 1995-07-19
DE69322404D1 (de) 1999-01-14
US5645698A (en) 1997-07-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee