DE3177309T2 - Mittels magnetische Mitteln verbesserte Zerstäubungsquelle. - Google Patents

Mittels magnetische Mitteln verbesserte Zerstäubungsquelle.

Info

Publication number
DE3177309T2
DE3177309T2 DE3177309T DE3177309T DE3177309T2 DE 3177309 T2 DE3177309 T2 DE 3177309T2 DE 3177309 T DE3177309 T DE 3177309T DE 3177309 T DE3177309 T DE 3177309T DE 3177309 T2 DE3177309 T2 DE 3177309T2
Authority
DE
Germany
Prior art keywords
magnetic means
atomization source
improved atomization
improved
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3177309T
Other languages
English (en)
Other versions
DE3177309D1 (de
Inventor
Lawrence Turner Lamont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of DE3177309D1 publication Critical patent/DE3177309D1/de
Application granted granted Critical
Publication of DE3177309T2 publication Critical patent/DE3177309T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE3177309T 1980-05-16 1981-04-22 Mittels magnetische Mitteln verbesserte Zerstäubungsquelle. Expired - Lifetime DE3177309T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/150,532 US4457825A (en) 1980-05-16 1980-05-16 Sputter target for use in a sputter coating source

Publications (2)

Publication Number Publication Date
DE3177309D1 DE3177309D1 (de) 1994-03-31
DE3177309T2 true DE3177309T2 (de) 1994-05-26

Family

ID=22534972

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3177309T Expired - Lifetime DE3177309T2 (de) 1980-05-16 1981-04-22 Mittels magnetische Mitteln verbesserte Zerstäubungsquelle.
DE8181901255T Expired - Lifetime DE3177132D1 (de) 1980-05-16 1981-04-22 Sputter target und vorrichtung zum beschichten mittels glimmentladung.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8181901255T Expired - Lifetime DE3177132D1 (de) 1980-05-16 1981-04-22 Sputter target und vorrichtung zum beschichten mittels glimmentladung.

Country Status (6)

Country Link
US (1) US4457825A (de)
EP (2) EP0051635B1 (de)
JP (1) JPS5944387B2 (de)
DE (2) DE3177309T2 (de)
IT (1) IT1135813B (de)
WO (1) WO1981003345A1 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525264A (en) * 1981-12-07 1985-06-25 Ford Motor Company Cylindrical post magnetron sputtering system
JPS5976875A (ja) * 1982-10-22 1984-05-02 Hitachi Ltd マグネトロン型スパッタ装置とそれに用いるターゲット
US4515675A (en) * 1983-07-06 1985-05-07 Leybold-Heraeus Gmbh Magnetron cathode for cathodic evaportion apparatus
US4500409A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Magnetron sputter coating source for both magnetic and non magnetic target materials
US4500408A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
NL8402012A (nl) * 1983-07-19 1985-02-18 Varian Associates Magnetron spetter deklaag opbrengbron voor zowel magnetische als niet-magnetische trefplaatmaterialen.
CH659484A5 (de) * 1984-04-19 1987-01-30 Balzers Hochvakuum Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.
US4606806A (en) * 1984-05-17 1986-08-19 Varian Associates, Inc. Magnetron sputter device having planar and curved targets
US4627904A (en) * 1984-05-17 1986-12-09 Varian Associates, Inc. Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias
DE163445T1 (de) * 1984-05-17 1986-05-22 Varian Associates, Inc., Palo Alto, Calif. Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten.
US4564435A (en) * 1985-05-23 1986-01-14 Varian Associates, Inc. Target assembly for sputtering magnetic material
US4855033A (en) * 1986-04-04 1989-08-08 Materials Research Corporation Cathode and target design for a sputter coating apparatus
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
US4820397A (en) * 1988-04-04 1989-04-11 Tosoh Smd, Inc. Quick change sputter target assembly
US5032246A (en) * 1990-05-17 1991-07-16 Tosoh Smd, Inc. Sputtering target wrench and sputtering target design
US5009765A (en) * 1990-05-17 1991-04-23 Tosoh Smd, Inc. Sputter target design
US5490914A (en) * 1995-02-14 1996-02-13 Sony Corporation High utilization sputtering target for cathode assembly
US5147521A (en) * 1991-05-20 1992-09-15 Tosoh Smd, Inc. Quick change sputter target assembly
DE4123274C2 (de) * 1991-07-13 1996-12-19 Leybold Ag Vorrichtung zum Beschichten von Bauteilen bzw. Formteilen durch Kathodenzerstäubung
US5194131A (en) * 1991-08-16 1993-03-16 Varian Associates, Inc. Apparatus and method for multiple ring sputtering from a single target
US5269899A (en) * 1992-04-29 1993-12-14 Tosoh Smd, Inc. Cathode assembly for cathodic sputtering apparatus
US5342496A (en) * 1993-05-18 1994-08-30 Tosoh Smd, Inc. Method of welding sputtering target/backing plate assemblies
EP0676791B1 (de) * 1994-04-07 1995-11-15 Balzers Aktiengesellschaft Magnetronzerstäubungsquelle und deren Verwendung
EP0704878A1 (de) * 1994-09-27 1996-04-03 Applied Materials, Inc. Niederschlag eines Films aus zerstaübten Materialien gleichmässiger Dicke
DE19648390A1 (de) * 1995-09-27 1998-05-28 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage
CH691643A5 (de) * 1995-10-06 2001-08-31 Unaxis Balzers Ag Magnetronzerstäubungsquelle und deren Verwendung.
US5658442A (en) * 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US5855745A (en) * 1997-04-23 1999-01-05 Sierra Applied Sciences, Inc. Plasma processing system utilizing combined anode/ ion source
AU9410498A (en) * 1997-11-26 1999-06-17 Vapor Technologies, Inc. Apparatus for sputtering or arc evaporation
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6620296B2 (en) 2000-07-17 2003-09-16 Applied Materials, Inc. Target sidewall design to reduce particle generation during magnetron sputtering
US20040244949A1 (en) * 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
US7303996B2 (en) * 2003-10-01 2007-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
US10347473B2 (en) * 2009-09-24 2019-07-09 The United States Of America, As Represented By The Secretary Of The Navy Synthesis of high-purity bulk copper indium gallium selenide materials
CN103132038A (zh) * 2013-02-27 2013-06-05 蚌埠玻璃工业设计研究院 一种消除阴极背面辉光放电装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3282815A (en) * 1963-07-01 1966-11-01 Ibm Magnetic control of film deposition
US3616450A (en) * 1968-11-07 1971-10-26 Peter J Clark Sputtering apparatus
US3711398A (en) * 1971-02-18 1973-01-16 P Clarke Sputtering apparatus
US3829373A (en) * 1973-01-12 1974-08-13 Coulter Information Systems Thin film deposition apparatus using segmented target means
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
US4060470A (en) * 1974-12-06 1977-11-29 Clarke Peter J Sputtering apparatus and method
US4046660A (en) * 1975-12-29 1977-09-06 Bell Telephone Laboratories, Incorporated Sputter coating with charged particle flux control
US4155825A (en) * 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
US4100055A (en) * 1977-06-10 1978-07-11 Varian Associates, Inc. Target profile for sputtering apparatus
US4166783A (en) * 1978-04-17 1979-09-04 Varian Associates, Inc. Deposition rate regulation by computer control of sputtering systems
US4180450A (en) * 1978-08-21 1979-12-25 Vac-Tec Systems, Inc. Planar magnetron sputtering device
US4265729A (en) * 1978-09-27 1981-05-05 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device
US4162954A (en) * 1978-08-21 1979-07-31 Vac-Tec Systems, Inc. Planar magnetron sputtering device
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
HU179482B (en) * 1979-02-19 1982-10-28 Mikroelektronikai Valalat Penning pulverizel source
US4204936A (en) * 1979-03-29 1980-05-27 The Perkin-Elmer Corporation Method and apparatus for attaching a target to the cathode of a sputtering system
GB2051877B (en) * 1979-04-09 1983-03-02 Vac Tec Syst Magnetically enhanced sputtering device and method
US4239611A (en) * 1979-06-11 1980-12-16 Vac-Tec Systems, Inc. Magnetron sputtering devices
DE3004541C2 (de) * 1980-02-07 1982-03-04 Siemens AG, 1000 Berlin und 8000 München Mehrkanaliges, schreibendes Meßgerät

Also Published As

Publication number Publication date
EP0311697A3 (en) 1990-01-17
EP0311697A2 (de) 1989-04-19
EP0051635B1 (de) 1989-12-13
IT8121735A0 (it) 1981-05-15
JPS57500615A (de) 1982-04-08
US4457825A (en) 1984-07-03
EP0051635A1 (de) 1982-05-19
JPS5944387B2 (ja) 1984-10-29
EP0051635A4 (de) 1983-09-26
DE3177132D1 (de) 1990-01-18
EP0311697B1 (de) 1994-02-23
DE3177309D1 (de) 1994-03-31
WO1981003345A1 (en) 1981-11-26
IT1135813B (it) 1986-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.(N.