DE69123528T2 - Gerät und Verfahren unter Verwendung eines durch Mikrowellen erzeugten Plasmas - Google Patents
Gerät und Verfahren unter Verwendung eines durch Mikrowellen erzeugten PlasmasInfo
- Publication number
- DE69123528T2 DE69123528T2 DE69123528T DE69123528T DE69123528T2 DE 69123528 T2 DE69123528 T2 DE 69123528T2 DE 69123528 T DE69123528 T DE 69123528T DE 69123528 T DE69123528 T DE 69123528T DE 69123528 T2 DE69123528 T2 DE 69123528T2
- Authority
- DE
- Germany
- Prior art keywords
- generated plasma
- microwave generated
- microwave
- plasma
- generated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2248801A JPH04129133A (ja) | 1990-09-20 | 1990-09-20 | イオン源及びプラズマ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69123528D1 DE69123528D1 (de) | 1997-01-23 |
DE69123528T2 true DE69123528T2 (de) | 1997-06-12 |
Family
ID=17183607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69123528T Expired - Fee Related DE69123528T2 (de) | 1990-09-20 | 1991-09-09 | Gerät und Verfahren unter Verwendung eines durch Mikrowellen erzeugten Plasmas |
Country Status (4)
Country | Link |
---|---|
US (1) | US5266146A (de) |
EP (1) | EP0476900B1 (de) |
JP (1) | JPH04129133A (de) |
DE (1) | DE69123528T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6046425A (en) * | 1991-05-31 | 2000-04-04 | Hitachi, Ltd. | Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber |
US5700326A (en) * | 1992-02-27 | 1997-12-23 | Canon Kabushiki Kaisha | Microwave plasma processing apparatus |
US5444207A (en) * | 1992-03-26 | 1995-08-22 | Kabushiki Kaisha Toshiba | Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field |
US5660744A (en) * | 1992-03-26 | 1997-08-26 | Kabushiki Kaisha Toshiba | Plasma generating apparatus and surface processing apparatus |
DE4217900A1 (de) * | 1992-05-29 | 1993-12-02 | Leybold Ag | Anordnung einer mikrowellendurchlässigen Scheibe in einem Hohlleiter und Verfahren zur Einbringung dieser Scheibe |
KR970000538B1 (ko) * | 1993-04-27 | 1997-01-13 | 엘지전자 주식회사 | 게이트 리세스 구조를 갖는 전계효과트랜지스터의 제조방법 |
JPH08102279A (ja) * | 1994-09-30 | 1996-04-16 | Hitachi Ltd | マイクロ波プラズマ生成装置 |
DE19680845D2 (de) * | 1996-11-01 | 1999-03-18 | Theva Duennschicht Gmbh | Vorrichtung zur Herstellung oxidischer Dünnschichten |
US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
US6109206A (en) * | 1997-05-29 | 2000-08-29 | Applied Materials, Inc. | Remote plasma source for chamber cleaning |
JP3599564B2 (ja) | 1998-06-25 | 2004-12-08 | 東京エレクトロン株式会社 | イオン流形成方法及び装置 |
JPH11102799A (ja) * | 1997-09-26 | 1999-04-13 | Mitsubishi Electric Corp | プラズマ発生装置 |
FR2774251B1 (fr) * | 1998-01-26 | 2000-02-25 | Commissariat Energie Atomique | Source a plasma micro-onde lineaire en aimants permanents |
US6163006A (en) * | 1998-02-06 | 2000-12-19 | Astex-Plasmaquest, Inc. | Permanent magnet ECR plasma source with magnetic field optimization |
US6225592B1 (en) * | 1998-09-15 | 2001-05-01 | Astex-Plasmaquest, Inc. | Method and apparatus for launching microwave energy into a plasma processing chamber |
US6646223B2 (en) * | 1999-12-28 | 2003-11-11 | Texas Instruments Incorporated | Method for improving ash rate uniformity in photoresist ashing process equipment |
US6232723B1 (en) * | 2000-02-09 | 2001-05-15 | Igor Alexeff | Direct current energy discharge system |
US20050026436A1 (en) * | 2000-12-21 | 2005-02-03 | Hogan Timothy J. | Method for improving ash rate uniformity in photoresist ashing process equipment |
JP2003342757A (ja) * | 2002-05-28 | 2003-12-03 | Canon Inc | ミリング方法およびミリング装置 |
US6846396B2 (en) * | 2002-08-08 | 2005-01-25 | Applied Materials, Inc. | Active magnetic shielding |
US7500445B2 (en) * | 2003-01-27 | 2009-03-10 | Applied Materials, Inc. | Method and apparatus for cleaning a CVD chamber |
US9922795B2 (en) * | 2015-07-27 | 2018-03-20 | Varian Semiconductor Equipment Associates, Inc. | High brightness ion beam extraction using bias electrodes and magnets proximate the extraction aperture |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6292322A (ja) * | 1985-10-18 | 1987-04-27 | Hitachi Ltd | ドライエツチング装置 |
JPS6377120A (ja) * | 1986-09-19 | 1988-04-07 | Mitsubishi Electric Corp | プラズマ処理装置 |
JPH07120648B2 (ja) * | 1987-01-12 | 1995-12-20 | 日本真空技術株式会社 | マイクロ波プラズマ処理装置 |
KR960015609B1 (ko) * | 1987-01-19 | 1996-11-18 | 미쓰다 가쓰시게 | 플라즈마 처리장치 및 방법 |
KR880013424A (ko) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
JPH0672306B2 (ja) * | 1987-04-27 | 1994-09-14 | 株式会社半導体エネルギー研究所 | プラズマ処理装置およびプラズマ処理方法 |
JPH0687440B2 (ja) * | 1987-05-11 | 1994-11-02 | 松下電器産業株式会社 | マイクロ波プラズマ発生方法 |
US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
JPH01243343A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | マイクロ波イオン源 |
JPH0217636A (ja) * | 1988-07-06 | 1990-01-22 | Hitachi Ltd | ドライエッチング装置 |
JP2670623B2 (ja) * | 1988-09-19 | 1997-10-29 | アネルバ株式会社 | マイクロ波プラズマ処理装置 |
JPH0752635B2 (ja) * | 1988-10-18 | 1995-06-05 | 日新電機株式会社 | イオン源装置 |
JPH02123640A (ja) * | 1988-11-01 | 1990-05-11 | Anelva Corp | 放電装置 |
-
1990
- 1990-09-20 JP JP2248801A patent/JPH04129133A/ja active Pending
-
1991
- 1991-09-09 EP EP91308209A patent/EP0476900B1/de not_active Expired - Lifetime
- 1991-09-09 DE DE69123528T patent/DE69123528T2/de not_active Expired - Fee Related
- 1991-09-20 US US07/763,206 patent/US5266146A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69123528D1 (de) | 1997-01-23 |
EP0476900B1 (de) | 1996-12-11 |
JPH04129133A (ja) | 1992-04-30 |
US5266146A (en) | 1993-11-30 |
EP0476900A1 (de) | 1992-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |