JP5178832B2 - 非電導性ターゲットを使用するスパッタリングによるセラミック薄膜の成膜方法 - Google Patents
非電導性ターゲットを使用するスパッタリングによるセラミック薄膜の成膜方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 105
- 238000004544 sputter deposition Methods 0.000 title claims description 58
- 239000000919 ceramic Substances 0.000 title claims description 24
- 238000000151 deposition Methods 0.000 title description 14
- 238000000034 method Methods 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 22
- 229910012851 LiCoO 2 Inorganic materials 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 229910013290 LiNiO 2 Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 239000012811 non-conductive material Substances 0.000 claims description 4
- 229910012735 LiCo1/3Ni1/3Mn1/3O2 Inorganic materials 0.000 claims description 3
- 229910010707 LiFePO 4 Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 229910000625 lithium cobalt oxide Inorganic materials 0.000 description 21
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 18
- 230000008021 deposition Effects 0.000 description 12
- 229910052744 lithium Inorganic materials 0.000 description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004630 atomic force microscopy Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 229910021450 lithium metal oxide Inorganic materials 0.000 description 6
- 238000001552 radio frequency sputter deposition Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000006183 anode active material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- MGBJUXYJNGMFMN-UHFFFAOYSA-N [Li+].[O--].[O--].[O--].[O--].[V+5].[Ni++] Chemical compound [Li+].[O--].[O--].[O--].[O--].[V+5].[Ni++] MGBJUXYJNGMFMN-UHFFFAOYSA-N 0.000 description 2
- MOOYSSSIVSFZQA-UHFFFAOYSA-N [Li].[Mo] Chemical compound [Li].[Mo] MOOYSSSIVSFZQA-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- RLTFLELMPUMVEH-UHFFFAOYSA-N [Li+].[O--].[O--].[O--].[V+5] Chemical compound [Li+].[O--].[O--].[O--].[V+5] RLTFLELMPUMVEH-UHFFFAOYSA-N 0.000 description 1
- FBDMTTNVIIVBKI-UHFFFAOYSA-N [O-2].[Mn+2].[Co+2].[Ni+2].[Li+] Chemical compound [O-2].[Mn+2].[Co+2].[Ni+2].[Li+] FBDMTTNVIIVBKI-UHFFFAOYSA-N 0.000 description 1
- FDLZQPXZHIFURF-UHFFFAOYSA-N [O-2].[Ti+4].[Li+] Chemical compound [O-2].[Ti+4].[Li+] FDLZQPXZHIFURF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- -1 copper Chemical class 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- BVPMZCWLVVIHKO-UHFFFAOYSA-N lithium cobalt(2+) manganese(2+) oxygen(2-) Chemical compound [O-2].[Mn+2].[Co+2].[Li+] BVPMZCWLVVIHKO-UHFFFAOYSA-N 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- GELKBWJHTRAYNV-UHFFFAOYSA-K lithium iron phosphate Chemical compound [Li+].[Fe+2].[O-]P([O-])([O-])=O GELKBWJHTRAYNV-UHFFFAOYSA-K 0.000 description 1
- SWAIALBIBWIKKQ-UHFFFAOYSA-N lithium titanium Chemical compound [Li].[Ti] SWAIALBIBWIKKQ-UHFFFAOYSA-N 0.000 description 1
- PNEHEYIOYAJHPI-UHFFFAOYSA-N lithium tungsten Chemical compound [Li].[W] PNEHEYIOYAJHPI-UHFFFAOYSA-N 0.000 description 1
- 229910000686 lithium vanadium oxide Inorganic materials 0.000 description 1
- CJYZTOPVWURGAI-UHFFFAOYSA-N lithium;manganese;manganese(3+);oxygen(2-) Chemical compound [Li+].[O-2].[O-2].[O-2].[O-2].[Mn].[Mn+3] CJYZTOPVWURGAI-UHFFFAOYSA-N 0.000 description 1
- URIIGZKXFBNRAU-UHFFFAOYSA-N lithium;oxonickel Chemical compound [Li].[Ni]=O URIIGZKXFBNRAU-UHFFFAOYSA-N 0.000 description 1
- BAEKJBILAYEFEI-UHFFFAOYSA-N lithium;oxotungsten Chemical compound [Li].[W]=O BAEKJBILAYEFEI-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
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- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1391—Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
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Description
また、本発明は、スパッタリング時に、工程変数の調整により最も好ましい組成及び結晶構造を有するセラミック薄膜を成膜し得る方法を提供することを目的とする。
また、本発明は、リチウム薄膜電池に適用され得るセラミック薄膜の成膜速度を向上して薄膜電池の商用化に適した量産性を確保することを目的とする。
また、ターゲットは、LiFePO4、LiNiVO4、LiCoMnO4、LiCo1/3Ni1/3Mn1/3O2、LixV2O5、LixMoO3、LixWO3、LixTiS2、LixMoS2、Li4Ti5O12からなる群から選択される材質で作られることができる。
また、最初に印加される交流高周波電力は、交流高周波電力及び直流電力の和である混成電力に比べて小さい電力レベルであることが好ましい。
ここで、交流高周波電力の印加によりプラズマを発生させて保持し、直流電力の印加によりスパッタリングに必要なパワーを提供することが好ましい。
さらに、今までのRFスパッタリングと比べると、本発明に係るスパッタリング方法は、非電導性ターゲットに対するスパッタリングの成膜速度と成膜された薄膜の均一度を画期的に向上することができる。
Claims (10)
- 非電導性材質からなるターゲットを真空チャンバ内に配置し、最初に前記ターゲットにRF電力を印加することにより前記チャンバ内にプラズマを形成させ、次いでRF電力とDC電力とを重畳した混成電力を前記ターゲットに印加することにより前記真空チャンバ内でスパッタリング工程を行って、前記真空チャンバ内に位置する基板上にセラミック薄膜を成膜するスパッタリングによるセラミック薄膜の成膜方法。
- 前記ターゲットが、LiCoO2、LiMn2O4、LiNiO2及びCIGS(Cu(In,Ga)Se2)からなる群から選択される材質で作られる請求項1に記載のスパッタリングによるセラミック薄膜の成膜方法。
- 前記ターゲットが、LiFePO4、LiNiVO4、LiCoMnO4、LiCo1/3Ni1/3Mn1/3O2、LixV2O5、LixMoO3、LixWO3、LixTiS2、LixMoS2及びLi4Ti5O12からなる群から選択される材質で作られる請求項1に記載のスパッタリングによるセラミック薄膜の成膜方法。
- 前記ターゲットが、圧縮−焼結して作られて、前記ターゲットと同一の組成を有するセラミック薄膜がスパッタリングにより成膜される請求項1から請求項3のいずれかに記載のスパッタリングによるセラミック薄膜の成膜方法。
- 最初に印加される前記RF電力が、RFおよびDC電力の和である前記混成電力と同一の電力レベルを有する請求項1から請求項3のいずれかに記載のスパッタリングによるセラミック薄膜の成膜方法。
- 最初に印加される前記RF電力が、RFおよびDC電力の和である前記混成電力に比べて小さい電力レベルを有する請求項1から請求項3のいずれかに記載のスパッタリングによるセラミック薄膜の成膜方法。
- 前記混成電力における前記DC電力が、RF及びDC電力レベルの和の30%以上である請求項1から請求項3のいずれかに記載のスパッタリングによるセラミック薄膜の成膜方法。
- RF電力の印加によりプラズマを発生および保持し、DC電力の印加によりスパッタリングに必要なパワーを提供する請求項1から請求項3のいずれかに記載のセラミック薄膜の成膜方法。
- 非電導性ターゲットと基板とが載置されるステージを含む真空チャンバと;
前記ターゲットにRF電力を供給する交流電源と;
前記ターゲットにDC電力を供給する直流電源と;
インピーダンスマッチングを行うことにより前記RF電力と前記DC電力とを混成する整合装置と;
を含む非電導性ターゲットを使用する薄膜スパッタリング装置。 - 前記整合装置が、前記交流電源と前記直流電源とから各々電力が入力される複数の入力端子と、前記ターゲットに電力を出力する出力端子とを具備している請求項9に記載の非電導性ターゲットを使用する薄膜スパッタリング装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR10-2007-0074794 | 2007-07-25 | ||
KR20070074794 | 2007-07-25 | ||
PCT/KR2008/004344 WO2009014394A2 (en) | 2007-07-25 | 2008-07-24 | Method for depositing ceramic thin film by sputtering using non-conductive target |
Publications (2)
Publication Number | Publication Date |
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JP2011504546A JP2011504546A (ja) | 2011-02-10 |
JP5178832B2 true JP5178832B2 (ja) | 2013-04-10 |
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JP2010518122A Expired - Fee Related JP5178832B2 (ja) | 2007-07-25 | 2008-07-24 | 非電導性ターゲットを使用するスパッタリングによるセラミック薄膜の成膜方法 |
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Country | Link |
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US (1) | US20100264017A1 (ja) |
JP (1) | JP5178832B2 (ja) |
KR (1) | KR101010716B1 (ja) |
WO (1) | WO2009014394A2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009187682A (ja) * | 2008-02-01 | 2009-08-20 | Ulvac Japan Ltd | カソード電極の製造方法及び薄膜固体リチウムイオン2次電池の製造方法 |
US8992741B2 (en) * | 2008-08-08 | 2015-03-31 | Applied Materials, Inc. | Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target |
JP5392536B2 (ja) * | 2008-11-20 | 2014-01-22 | トヨタ自動車株式会社 | 全固体電池と全固体電池用電極およびその製造方法 |
JP5773346B2 (ja) * | 2009-03-12 | 2015-09-02 | 株式会社アルバック | セルフイオンスパッタリング装置 |
US9752228B2 (en) * | 2009-04-03 | 2017-09-05 | Applied Materials, Inc. | Sputtering target for PVD chamber |
KR101067337B1 (ko) * | 2009-08-20 | 2011-09-23 | 연세대학교 산학협력단 | 물리적 증착용 타겟 제조 방법 |
US8795488B2 (en) * | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed RF energy |
US8795487B2 (en) * | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power |
US8864954B2 (en) | 2011-12-23 | 2014-10-21 | Front Edge Technology Inc. | Sputtering lithium-containing material with multiple targets |
US9077000B2 (en) | 2012-03-29 | 2015-07-07 | Front Edge Technology, Inc. | Thin film battery and localized heat treatment |
US9765426B1 (en) * | 2012-04-20 | 2017-09-19 | Applied Materials, Inc. | Lithium containing composite metallic sputtering targets |
US9159964B2 (en) | 2012-09-25 | 2015-10-13 | Front Edge Technology, Inc. | Solid state battery having mismatched battery cells |
US8753724B2 (en) | 2012-09-26 | 2014-06-17 | Front Edge Technology Inc. | Plasma deposition on a partially formed battery through a mesh screen |
TWI611032B (zh) | 2013-09-05 | 2018-01-11 | 攀時歐洲公司 | 導電靶材 |
EP3196337B1 (en) | 2014-09-19 | 2019-11-20 | Toppan Printing Co., Ltd. | Film-formation device and film-formation method |
US10008739B2 (en) | 2015-02-23 | 2018-06-26 | Front Edge Technology, Inc. | Solid-state lithium battery with electrolyte |
JP6672595B2 (ja) | 2015-03-17 | 2020-03-25 | 凸版印刷株式会社 | 成膜装置 |
JP2019002047A (ja) * | 2017-06-15 | 2019-01-10 | 昭和電工株式会社 | スパッタリングターゲット |
CN113387683B (zh) * | 2021-06-11 | 2023-06-02 | 武汉科技大学 | 一种锂钴锰氧化物靶材及其制备方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3821207A1 (de) * | 1988-06-23 | 1989-12-28 | Leybold Ag | Anordnung zum beschichten eines substrats mit dielektrika |
JPH0313573A (ja) * | 1989-06-10 | 1991-01-22 | Ulvac Corp | 誘電体膜の反応性スパッタ成膜法 |
JPH06272037A (ja) * | 1991-06-21 | 1994-09-27 | Tonen Corp | 薄膜形成方法およびその装置 |
JP3478561B2 (ja) * | 1993-05-26 | 2003-12-15 | キヤノン株式会社 | スパッタ成膜方法 |
JPH0715051A (ja) * | 1993-06-24 | 1995-01-17 | Mitsubishi Electric Corp | Ybco超電導薄膜の製造方法 |
JPH07126845A (ja) * | 1993-11-05 | 1995-05-16 | Ulvac Japan Ltd | 誘電体膜の成膜方法 |
JPH08165575A (ja) * | 1994-12-09 | 1996-06-25 | Isao Hara | 多層膜の製造方法及びその装置 |
US5830336A (en) * | 1995-12-05 | 1998-11-03 | Minnesota Mining And Manufacturing Company | Sputtering of lithium |
JP4120974B2 (ja) * | 1997-06-17 | 2008-07-16 | キヤノンアネルバ株式会社 | 薄膜作製方法および薄膜作製装置 |
JP4167749B2 (ja) * | 1998-04-24 | 2008-10-22 | キヤノンアネルバ株式会社 | スパッタリング方法及びスパッタリング装置 |
JP3895463B2 (ja) * | 1998-05-11 | 2007-03-22 | 株式会社リコー | 薄膜形成方法及び薄膜形成装置 |
JP3887494B2 (ja) * | 1998-07-13 | 2007-02-28 | 株式会社リコー | 薄膜形成装置及び薄膜形成方法 |
JP4288641B2 (ja) * | 2000-08-17 | 2009-07-01 | 本田技研工業株式会社 | 化合物半導体成膜装置 |
US6558836B1 (en) * | 2001-02-08 | 2003-05-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Structure of thin-film lithium microbatteries |
JP3574104B2 (ja) * | 2001-11-27 | 2004-10-06 | 三容真空工業株式会社 | プラズマ発生のためのマッチング回路を利用したプラズマ発生駆動装置 |
US6835493B2 (en) * | 2002-07-26 | 2004-12-28 | Excellatron Solid State, Llc | Thin film battery |
US20040096745A1 (en) * | 2002-11-12 | 2004-05-20 | Matsushita Electric Industrial Co., Ltd. | Lithium ion conductor and all-solid lithium ion rechargeable battery |
JP2004335192A (ja) * | 2003-05-02 | 2004-11-25 | Sony Corp | 正極の製造方法および電池の製造方法 |
US7879410B2 (en) * | 2004-06-09 | 2011-02-01 | Imra America, Inc. | Method of fabricating an electrochemical device using ultrafast pulsed laser deposition |
WO2006063308A2 (en) * | 2004-12-08 | 2006-06-15 | Symmorphix, Inc. | DEPOSITION OF LICoO2 |
US7959769B2 (en) * | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
WO2006082846A1 (ja) * | 2005-02-02 | 2006-08-10 | Geomatec Co., Ltd. | 薄膜固体二次電池 |
US20060278524A1 (en) * | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for modulating power signals to control sputtering |
JP2007103129A (ja) * | 2005-10-03 | 2007-04-19 | Geomatec Co Ltd | 薄膜固体二次電池および薄膜固体二次電池の製造方法 |
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- 2008-07-24 JP JP2010518122A patent/JP5178832B2/ja not_active Expired - Fee Related
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WO2009014394A3 (en) | 2009-03-19 |
JP2011504546A (ja) | 2011-02-10 |
US20100264017A1 (en) | 2010-10-21 |
KR20090012140A (ko) | 2009-02-02 |
KR101010716B1 (ko) | 2011-01-24 |
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