JP5773346B2 - セルフイオンスパッタリング装置 - Google Patents
セルフイオンスパッタリング装置 Download PDFInfo
- Publication number
- JP5773346B2 JP5773346B2 JP2009060155A JP2009060155A JP5773346B2 JP 5773346 B2 JP5773346 B2 JP 5773346B2 JP 2009060155 A JP2009060155 A JP 2009060155A JP 2009060155 A JP2009060155 A JP 2009060155A JP 5773346 B2 JP5773346 B2 JP 5773346B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- self
- discharge
- power source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Description
Claims (2)
- 処理すべき基板が配置される真空チャンバと、前記基板に対向配置されるターゲットと、前記ターゲットに負の直流電位を印加するスパッタ電源と、前記ターゲットの前方空間を囲うように配置され、正の電位が印加されるアノードシールドと、前記真空チャンバ内に所定のスパッタガスを導入するガス導入手段とを備え、前記ガス導入手段は、真空チャンバにスパッタガスを導入し、ターゲットに電力投入してターゲットとアノードシールドとで囲繞された空間に放電を発生させた後、当該スパッタガスの導入を停止してこの空間にて自己放電させるセルフイオンスパッタリング装置において、
前記直流電源からターゲットへの出力回路に並列にLC共振回路を有し、LC共振回路は、そのコイルとして5〜200μHの範囲内のものを用い且つそのコンデンサとして0.10〜0.44μFの範囲内のものを用い、自己放電中にアーク放電が発生すると、前記スパッタ電源からの出力電位を共振させて出力電位の低下を抑制して前記自己放電を維持するように構成されることを特徴とするセルフイオンスパッタリング装置。 - 前記スパッタ電源からターゲットへの出力にノイズフィルターを更に備えることを特徴とする請求項1記載のセルフイオンスパッタリング装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009060155A JP5773346B2 (ja) | 2009-03-12 | 2009-03-12 | セルフイオンスパッタリング装置 |
US12/659,268 US20100230280A1 (en) | 2009-03-12 | 2010-03-02 | Self-ionized sputtering apparatus |
TW099106762A TWI520802B (zh) | 2009-03-12 | 2010-03-09 | Self - ion sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009060155A JP5773346B2 (ja) | 2009-03-12 | 2009-03-12 | セルフイオンスパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010209453A JP2010209453A (ja) | 2010-09-24 |
JP5773346B2 true JP5773346B2 (ja) | 2015-09-02 |
Family
ID=42729809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009060155A Active JP5773346B2 (ja) | 2009-03-12 | 2009-03-12 | セルフイオンスパッタリング装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100230280A1 (ja) |
JP (1) | JP5773346B2 (ja) |
TW (1) | TWI520802B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9834840B2 (en) * | 2010-05-14 | 2017-12-05 | Applied Materials, Inc. | Process kit shield for improved particle reduction |
CN103966557B (zh) * | 2013-02-05 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Ito薄膜溅射工艺方法及ito薄膜溅射设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6130665A (ja) * | 1984-07-20 | 1986-02-12 | Anelva Corp | スパツタ装置 |
JPH0798521B2 (ja) * | 1986-08-20 | 1995-10-25 | 澁谷工業株式会社 | 回転式重量充填装置 |
US5240584A (en) * | 1991-11-07 | 1993-08-31 | Leybold Aktiengesellschaft | Apparatus for the reactive coating of a substrate |
US5584972A (en) * | 1995-02-01 | 1996-12-17 | Sony Corporation | Plasma noise and arcing suppressor apparatus and method for sputter deposition |
JP2835322B2 (ja) * | 1997-02-20 | 1998-12-14 | 芝浦メカトロニクス株式会社 | スパッタリング用電源装置および該装置を用いたスパッタリング装置 |
JP4703828B2 (ja) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | スパッタリング装置及び薄膜製造方法 |
JP3635538B2 (ja) * | 2002-07-05 | 2005-04-06 | 株式会社京三製作所 | プラズマ発生用直流電源装置 |
JP5178832B2 (ja) * | 2007-07-25 | 2013-04-10 | ジーエス ナノテク カンパニー リミテッド | 非電導性ターゲットを使用するスパッタリングによるセラミック薄膜の成膜方法 |
-
2009
- 2009-03-12 JP JP2009060155A patent/JP5773346B2/ja active Active
-
2010
- 2010-03-02 US US12/659,268 patent/US20100230280A1/en not_active Abandoned
- 2010-03-09 TW TW099106762A patent/TWI520802B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI520802B (zh) | 2016-02-11 |
TW201040296A (en) | 2010-11-16 |
JP2010209453A (ja) | 2010-09-24 |
US20100230280A1 (en) | 2010-09-16 |
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