KR890012378A - 실리콘계 보호막을 사용한 반도체 장치의 제조방법 - Google Patents
실리콘계 보호막을 사용한 반도체 장치의 제조방법 Download PDFInfo
- Publication number
- KR890012378A KR890012378A KR1019890000609A KR890000609A KR890012378A KR 890012378 A KR890012378 A KR 890012378A KR 1019890000609 A KR1019890000609 A KR 1019890000609A KR 890000609 A KR890000609 A KR 890000609A KR 890012378 A KR890012378 A KR 890012378A
- Authority
- KR
- South Korea
- Prior art keywords
- protective film
- semiconductor device
- manufacturing semiconductor
- silicon based
- based protective
- Prior art date
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- 230000001681 protective effect Effects 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims 3
- 229910052710 silicon Inorganic materials 0.000 title claims 3
- 239000010703 silicon Substances 0.000 title claims 3
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예에 의한 본딩패드 형성 공정을 표시하는 반도체 장치의 단면도.
제3도는 응력완충 보호막 표면의 오고 전자분광 스팩트럼을 표시하는 그래프.
제4도는 질소 플라즈마 처리를 행한 응력완충 보호막 표면의 오거 전자분광 스펙트럼을 표시하는 그래프.
Claims (1)
- 응력완충 보호막으로서 4불화 탄소 플라즈마로서 에칭되지 않고 또한 불활성 가스에 의한 표면 개질 처리를 실실하는 것에 의하여 산소 플라즈마에 바래어도 크랙이 생기지 않는 막이 되는 내플라즈마성 실리콘계응력완충 보호막을 형성하는 것을 특징으로 하는 실리콘계 보호막을 사용한 반도체 장치의 제조방법.※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63011217A JP2503565B2 (ja) | 1988-01-21 | 1988-01-21 | 半導体装置の製造方法 |
JP63-11217 | 1988-01-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890012378A true KR890012378A (ko) | 1989-08-26 |
KR920004517B1 KR920004517B1 (ko) | 1992-06-08 |
Family
ID=11771799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890000609A KR920004517B1 (ko) | 1988-01-21 | 1989-01-20 | 실리콘계 보호막을 사용한 반도체 장치의 제조방법 |
Country Status (3)
Country | Link |
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US (1) | US5023204A (ko) |
JP (1) | JP2503565B2 (ko) |
KR (1) | KR920004517B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100238991B1 (ko) * | 1997-09-11 | 2000-04-01 | 백전호 | 공기가 주입된 에어모자를 이용한 다용도 안전모자와 헬멧 |
KR20010082057A (ko) * | 2000-02-10 | 2001-08-29 | 가네꼬 히사시 | 반도체장치 및 그 제조방법 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2503565B2 (ja) * | 1988-01-21 | 1996-06-05 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5157061A (en) * | 1988-04-05 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Epoxy resin containing an epoxy resin-modified silicone oil flexibilizer |
US5483104A (en) * | 1990-01-12 | 1996-01-09 | Paradigm Technology, Inc. | Self-aligning contact and interconnect structure |
US5166771A (en) * | 1990-01-12 | 1992-11-24 | Paradigm Technology, Inc. | Self-aligning contact and interconnect structure |
JPH04233732A (ja) * | 1990-08-16 | 1992-08-21 | Motorola Inc | 半導体の製造工程で使用するスピン・オン誘電体 |
JPH04261049A (ja) * | 1991-01-31 | 1992-09-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5256587A (en) * | 1991-03-20 | 1993-10-26 | Goldstar Electron Co., Ltd. | Methods of patterning and manufacturing semiconductor devices |
US5086017A (en) * | 1991-03-21 | 1992-02-04 | Industrial Technology Research Institute | Self aligned silicide process for gate/runner without extra masking |
US5393373A (en) * | 1991-07-11 | 1995-02-28 | Goldstar Electron Co., Ltd. | Methods of patterning and manufacturing semiconductor devices |
KR950009740B1 (ko) * | 1991-11-12 | 1995-08-26 | 금성일렉트론주식회사 | 메모리 캐패시터 제조방법 및 그 구조 |
JP2923408B2 (ja) * | 1992-12-21 | 1999-07-26 | 三菱電機株式会社 | 高純度シリコーンラダーポリマーの製造方法 |
JPH0799271A (ja) * | 1993-06-16 | 1995-04-11 | Mitsubishi Electric Corp | 半導体装置 |
JP3370806B2 (ja) | 1994-11-25 | 2003-01-27 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
US5600151A (en) * | 1995-02-13 | 1997-02-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device comprising a semiconductor substrate, an element formed thereon, and a stress-buffering film made of a silicone ladder resin |
US5474956A (en) * | 1995-03-14 | 1995-12-12 | Hughes Aircraft Company | Method of fabricating metallized substrates using an organic etch block layer |
JPH10330188A (ja) * | 1997-05-29 | 1998-12-15 | Kobe Steel Ltd | ダイヤモンドの微細加工方法 |
EP0890981B1 (en) * | 1997-07-11 | 2003-02-12 | Robert Bosch Gmbh | Enhanced underfill adhesion of flip chips |
KR100725364B1 (ko) * | 2005-09-06 | 2007-06-07 | 삼성전자주식회사 | 반도체 칩 패키지 및 그 제조 방법 |
JP4357570B2 (ja) * | 2008-01-31 | 2009-11-04 | 株式会社東芝 | 磁気記録媒体の製造方法 |
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JPS52127174A (en) * | 1976-04-19 | 1977-10-25 | Matsushita Electric Ind Co Ltd | Minute patern formation method |
JPS56135928A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Forming method for pattern of silicone resin |
JPS60249326A (ja) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | パタ−ン形成方法 |
JPS62247522A (ja) * | 1986-04-18 | 1987-10-28 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS62290139A (ja) * | 1986-06-09 | 1987-12-17 | Fujitsu Ltd | 耐熱樹脂組成物 |
JPS6314432A (ja) * | 1986-07-07 | 1988-01-21 | Nippon Telegr & Teleph Corp <Ntt> | パタン形成方法 |
JPS63107122A (ja) * | 1986-10-24 | 1988-05-12 | Fujitsu Ltd | 凹凸基板の平坦化方法 |
JPS63120774A (ja) * | 1986-11-07 | 1988-05-25 | Mitsubishi Electric Corp | 高純度SiO2薄膜形成法 |
JP2503565B2 (ja) * | 1988-01-21 | 1996-06-05 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPH01307227A (ja) * | 1988-06-06 | 1989-12-12 | Showa Denko Kk | 微細加工方法 |
JPH029153A (ja) * | 1988-06-28 | 1990-01-12 | Fujitsu Ltd | 半導体基板の平坦化処理法 |
-
1988
- 1988-01-21 JP JP63011217A patent/JP2503565B2/ja not_active Expired - Fee Related
-
1989
- 1989-01-19 US US07/298,950 patent/US5023204A/en not_active Expired - Lifetime
- 1989-01-20 KR KR1019890000609A patent/KR920004517B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100238991B1 (ko) * | 1997-09-11 | 2000-04-01 | 백전호 | 공기가 주입된 에어모자를 이용한 다용도 안전모자와 헬멧 |
KR20010082057A (ko) * | 2000-02-10 | 2001-08-29 | 가네꼬 히사시 | 반도체장치 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR920004517B1 (ko) | 1992-06-08 |
JPH01185924A (ja) | 1989-07-25 |
US5023204A (en) | 1991-06-11 |
JP2503565B2 (ja) | 1996-06-05 |
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