KR970018137A - 웨이퍼 처리 방법 - Google Patents

웨이퍼 처리 방법 Download PDF

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Publication number
KR970018137A
KR970018137A KR1019960039216A KR19960039216A KR970018137A KR 970018137 A KR970018137 A KR 970018137A KR 1019960039216 A KR1019960039216 A KR 1019960039216A KR 19960039216 A KR19960039216 A KR 19960039216A KR 970018137 A KR970018137 A KR 970018137A
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KR
South Korea
Prior art keywords
silicon
layer
wafer
forming
substrate
Prior art date
Application number
KR1019960039216A
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English (en)
Inventor
왈터 피어스 찰스
Original Assignee
존 티. 레흐버그
루센트 테크놀로지 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 존 티. 레흐버그, 루센트 테크놀로지 인코포레이티드 filed Critical 존 티. 레흐버그
Publication of KR970018137A publication Critical patent/KR970018137A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1601—Production of bubble jet print heads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1626—Manufacturing processes etching
    • B41J2/1629—Manufacturing processes etching wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1631—Manufacturing processes photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Ink Jet (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

채널기판과 같은 기판에 v형 홈(223, 221)을 형성시키기 위한 방법이 개시되어 있다. 열질화 공정에 의해 형성된 질화실리콘(215)의 마스크는 KOH에칭 동안 기판(11)을 보호한다.

Description

웨이퍼 처리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제9도는 본 발명의 실례가 되는 실시예를 이해하는데 유용한 횡단면도.

Claims (6)

  1. 실리콘 기판(11)상에 열질화 공정에 의한 질화실리콘층(141)을 형성하는 단계와, 상기 질화실리콘층(141)을 패터닝하여 상기 기판(11)의 일부를 노출시키는 단계와, 상기 기판의 상기 노출된 부분을 에칭하여 적어도 하나의 v형 홈을 만드는 단계를 포함하는 것을 특징으로 하는 웨이퍼 처리 방법.
  2. 제1항에 있어서, 상기 에칭 공정이 상기 기판을 통해서 에칭되는 것을 특징으로 하는 웨이퍼 처리 방법.
  3. 제1항에 있어서, 상기 에칭 공정이 KOH로 행하여지는 것을 특징으로 하는 웨이퍼 처리 방법.
  4. 제1항에 있어서, 상기 열질화 공정은 대기압에서 섭씨 900도 내지 섭씨 1200도의 온도로 NH3및 N2로 구성되는 족에서 선택된 적어도 한 종류의 기체에 상기 기판을 노출시키는 단계를 포함하는 것을 특징으로 하는 웨이퍼 처리 방법.
  5. 제1항에 있어서, 이산화실리콘층(213)이 질화실리콘층(215)의 상기 형성에 앞서서 형성되는 것은 특징으로 하는 웨이퍼 처리 방법.
  6. 대략 섭씨 1050도의 온도에서 산소 및 염화 수소산의 대기에 웨이퍼(11)를 노출시킴으로써 상기 실리콘 웨이퍼 상에 이산화실리콘층(213)을 형성하는 단계와, 대기압 및 대략 섭씨 1100도에서 20%의 NH3및 80%의 N2로된 대기에 상기 웨이퍼를 노출시키는 단계를 포함하는 열질화 공정에 의해 상기 이산화실리콘층(213) 및 상기 실리콘 웨이퍼(11) 사이에 질화실리콘층(215)을 형성하는 단계와, 질화실리콘 및 폴리실리콘으로 구성되는 족에서 선택되는 재료로된 재료층(217)을 상기 이산화실리콘층 위에 형성시키는 단계와, 상기 재료층(217), 상기 이산화실리콘충(213), 및 상기 질화실리콘층(215)을 패터닝하는 단계와, 상기 웨이퍼(11)을 KOH에 노출시켜서 두개 이상의 v형 홈(223, 221)을 형성하는 단계와, 상기 패터닝된 재료층(217), 상기 이산화실리콘층(213), 및 상기 질화실리콘층(215)을 제거하는 단계와, 상기 웨이퍼(11)를 베어내어(sawing) 적어도 하나의 채널 플레이트를 형성하는 단계를 포함하는 것을 특징으로 하는 채널 플레이트 형성 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960039216A 1995-09-20 1996-09-11 웨이퍼 처리 방법 KR970018137A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/531,115 US5711891A (en) 1995-09-20 1995-09-20 Wafer processing using thermal nitride etch mask
US531,115 1995-09-20

Publications (1)

Publication Number Publication Date
KR970018137A true KR970018137A (ko) 1997-04-30

Family

ID=24116299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960039216A KR970018137A (ko) 1995-09-20 1996-09-11 웨이퍼 처리 방법

Country Status (4)

Country Link
US (1) US5711891A (ko)
EP (1) EP0764977A2 (ko)
JP (1) JPH09129593A (ko)
KR (1) KR970018137A (ko)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3567052B2 (ja) * 1996-09-02 2004-09-15 三菱電機株式会社 半導体のマイクロマシニング方法
AUPP653998A0 (en) 1998-10-16 1998-11-05 Silverbrook Research Pty Ltd Micromechanical device and method (ij46B)
AUPP654398A0 (en) 1998-10-16 1998-11-05 Silverbrook Research Pty Ltd Micromechanical device and method (ij46g)
AUPP654598A0 (en) 1998-10-16 1998-11-05 Silverbrook Research Pty Ltd Micromechanical device and method (ij46h)
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
US6742873B1 (en) 2001-04-16 2004-06-01 Silverbrook Research Pty Ltd Inkjet printhead construction
US7419250B2 (en) 1999-10-15 2008-09-02 Silverbrook Research Pty Ltd Micro-electromechanical liquid ejection device
US7182431B2 (en) 1999-10-19 2007-02-27 Silverbrook Research Pty Ltd Nozzle arrangement
US20040263551A1 (en) 1998-10-16 2004-12-30 Kia Silverbrook Method and apparatus for firing ink from a plurality of nozzles on a printhead
US7028474B2 (en) 1998-10-16 2006-04-18 Silverbook Research Pty Ltd Micro-electromechanical actuator with control logic circuitry
AU1139100A (en) 1998-10-16 2000-05-08 Silverbrook Research Pty Limited Improvements relating to inkjet printers
US6994424B2 (en) 1998-10-16 2006-02-07 Silverbrook Research Pty Ltd Printhead assembly incorporating an array of printhead chips on an ink distribution structure
US6863378B2 (en) 1998-10-16 2005-03-08 Silverbrook Research Pty Ltd Inkjet printer having enclosed actuators
US7677686B2 (en) 1998-10-16 2010-03-16 Silverbrook Research Pty Ltd High nozzle density printhead ejecting low drop volumes
US7384131B2 (en) 1998-10-16 2008-06-10 Silverbrook Research Pty Ltd Pagewidth printhead having small print zone
US7111924B2 (en) 1998-10-16 2006-09-26 Silverbrook Research Pty Ltd Inkjet printhead having thermal bend actuator heating element electrically isolated from nozzle chamber ink
US6918655B2 (en) 1998-10-16 2005-07-19 Silverbrook Research Pty Ltd Ink jet printhead with nozzles
US7815291B2 (en) 1998-10-16 2010-10-19 Silverbrook Research Pty Ltd Printhead integrated circuit with low drive transistor to nozzle area ratio
US7216956B2 (en) 1998-10-16 2007-05-15 Silverbrook Research Pty Ltd Printhead assembly with power and ground connections along single edge
AUPP702198A0 (en) 1998-11-09 1998-12-03 Silverbrook Research Pty Ltd Image creation method and apparatus (ART79)
US6310641B1 (en) 1999-06-11 2001-10-30 Lexmark International, Inc. Integrated nozzle plate for an inkjet print head formed using a photolithographic method
US6676250B1 (en) 2000-06-30 2004-01-13 Silverbrook Research Pty Ltd Ink supply assembly for a print engine
US6889568B2 (en) 2002-01-24 2005-05-10 Sensarray Corporation Process condition sensing wafer and data analysis system
US7757574B2 (en) 2002-01-24 2010-07-20 Kla-Tencor Corporation Process condition sensing wafer and data analysis system
US8996090B2 (en) * 2002-06-03 2015-03-31 Exostat Medical, Inc. Noninvasive detection of a physiologic parameter within a body tissue of a patient
DE102004024105B4 (de) * 2003-10-31 2011-02-10 Qimonda Ag Verfahren zum Einbringen eines Grabens in ein Halbleitersubstrat sowie zum Aufbringen einer Deckschicht
US7547646B2 (en) * 2003-10-31 2009-06-16 Infineon Technologies Ag Trench capacitor structure and process for applying a covering layer and a mask for trench etching processes in semiconductor substrates
US8604361B2 (en) 2005-12-13 2013-12-10 Kla-Tencor Corporation Component package for maintaining safe operating temperature of components
TW200842970A (en) * 2007-04-26 2008-11-01 Mallinckrodt Baker Inc Polysilicon planarization solution for planarizing low temperature poly-silicon thin filim panels
US8681493B2 (en) 2011-05-10 2014-03-25 Kla-Tencor Corporation Heat shield module for substrate-like metrology device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法
US4266985A (en) * 1979-05-18 1981-05-12 Fujitsu Limited Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate
US4277320A (en) * 1979-10-01 1981-07-07 Rockwell International Corporation Process for direct thermal nitridation of silicon semiconductor devices
JP2604350B2 (ja) * 1985-06-05 1997-04-30 日本電気株式会社 エッチング方法
JPS63253671A (ja) * 1987-04-10 1988-10-20 Nec Corp 半導体装置の製造方法
US4957592A (en) * 1989-12-27 1990-09-18 Xerox Corporation Method of using erodable masks to produce partially etched structures in ODE wafer structures
US5201987A (en) * 1990-06-04 1993-04-13 Xerox Corporation Fabricating method for silicon structures
US5068006A (en) * 1990-09-04 1991-11-26 Xerox Corporation Thermal ink jet printhead with pre-diced nozzle face and method of fabrication therefor
JP2722873B2 (ja) * 1991-07-29 1998-03-09 日本電気株式会社 半導体装置およびその製造方法
JPH05102419A (ja) * 1991-10-07 1993-04-23 Sony Corp ダイナミツクｒａｍにおける容量の形成方法
US5308442A (en) * 1993-01-25 1994-05-03 Hewlett-Packard Company Anisotropically etched ink fill slots in silicon
US5385635A (en) * 1993-11-01 1995-01-31 Xerox Corporation Process for fabricating silicon channel structures with variable cross-sectional areas

Also Published As

Publication number Publication date
JPH09129593A (ja) 1997-05-16
EP0764977A2 (en) 1997-03-26
US5711891A (en) 1998-01-27

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