KR950030212A - 반도체 디바이스 제조용 처리장치 - Google Patents

반도체 디바이스 제조용 처리장치 Download PDF

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Publication number
KR950030212A
KR950030212A KR1019950007780A KR19950007780A KR950030212A KR 950030212 A KR950030212 A KR 950030212A KR 1019950007780 A KR1019950007780 A KR 1019950007780A KR 19950007780 A KR19950007780 A KR 19950007780A KR 950030212 A KR950030212 A KR 950030212A
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South Korea
Prior art keywords
treatment
gas
chamber
processing chamber
processing
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KR1019950007780A
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English (en)
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KR100241953B1 (ko
Inventor
타카유키 하세가와
히데히코 후지오카
요시토 요네야마
Original Assignee
미타라이 하지메
캐논 가부시키가이샤
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Priority claimed from JP09567694A external-priority patent/JP3168113B2/ja
Priority claimed from JP06961195A external-priority patent/JP3416326B2/ja
Application filed by 미타라이 하지메, 캐논 가부시키가이샤 filed Critical 미타라이 하지메
Publication of KR950030212A publication Critical patent/KR950030212A/ko
Application granted granted Critical
Publication of KR100241953B1 publication Critical patent/KR100241953B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

처리장치는, 처리실과, 상기 처리실의 내부분위기가스를 정제시켜, 이 정제된 가스를 상기 처리실로 환류시키는 환류수단과, 상기 분위기가스의 순도를 측정하는 측정수단과, 상기 측정수단의 출력에 따라 상기 환류수단의 정제능력을 조절하는 조절수단을 구비하고 있다. 다른 형태에 있어서, 처리장치는, 내부에서 제1처리가 수행되는 제1처리실과, 내부에서 제2처리가 수행되는 제2처리실과, 상기 제1처리용의 제1처리실에서 사용된 분위기가스를 가의 재사용을 위해 상기 제2처리실에 도입하는 수단을 구비하고 있다. 또 상기 제2처리실에서 사용된 가스는 이 가스의 재사용을 위해 상기 제1처리실로 환류시킨다. 이와같이 환류된 가스의 적어도 일부는 정제시켜 그의 순도를 향상시키고, 또 제2처리실로부터 배출된 가스의 순도를 순도센서에 의해 검지하고, 이 검지결과에 따라 가스정제능력을 조절한다.

Description

반도체 디바이스 제조용 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 의한 처리장치의 개략도, 제2도는 제1도의 실시예의 처리장치의 변형예의 개략도, 제3도는 본 발명의 제2실시예에 의한 처리장치의 개략도, 제4도는 반도체 디바이스 제조공정의 순서도.

Claims (11)

  1. 처리실과, 상기 처리실의 내부분위기가스를 정제시켜, 이 정제된 가스를 상기 처리실로 환류시키는 환류수단과, 상기 분위가가스의 순도를 측정하는 측정수단과, 상기 측정수단의 출력에 따라 상기 환류수단의 정제능력을 조절하는 조절수단을 구비한 것을 특징으로 하는 처리장치.
  2. 제1항에 있어서, 상기 처리실내에서는 기판에의 노광처리, 이 기판에의 도포처리 및 해당기판에의 현상처리가 수행되는 것을 특징으로 하는 처리장치.
  3. 제1항에 있어서, 상기 처리실의 내부는 감압분위기 인 것을 특징으로 하는 처리장치.
  4. 내부에서 제1처리가 수행되는 제1처리실과, 내부에서 제2처리가 수행되는 제2처리실과, 상기 제1처리용의 제1처리실에서 사용된 분위기가스를 그의 재사용을 위해 상기 제2처리실에 도입하는 수단을 구비한 것을 특징으로 하는 처리장치.
  5. 제4항에 있어서, 상기 제2처리용의 상기 제2처리실에서 사용된 분위기가스를 그의 재사용을 위해 상기 제1처리실로 환류시키는 환류수단을 또 구비한 것을 특징으로 하는 처리장치.
  6. 제5항에 있어서, 환류된 또는 환류될 분위기가스를 정제하는 정제수단을 또 구비한 것을 특징으로 하는 처리장치.
  7. 제6항에 있어서, 상기 분위기가스의 순도를 측정하는 측정수단과, 상기 측정수단의 출력에 따라서 상기 정제수단의 정제능력을 조절하는 조절수단을 또 구비한 것을 특징으로 하는 처리장치.
  8. 제4항에 있어서, 상기 제1처리는 기판의 노광처리하며, 상기 제2처리는 상기 기판에의 도포처리와 해당기판에의 현상처리중의 적어도 하나인 것을 특징으로 하는 처리장치.
  9. 제4항에 있어서, 상기 제1처리실가 제2처리실중 적어도 한쪽의 내부가 감압분위기인 것을 특징으로 하는 처리장치.
  10. 제1항 또는 제4항에 있어서, 상기 분위기가스는 불활성가스로 이루어진 것을 특징으로 하는 처리장치.
  11. 상기 청구항중 어느 한 항에 기재된 처리장치를 이용해서 디바이스를 제조하는 디바이스제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019950007780A 1994-04-08 1995-04-04 반도체디바이스제조용 처리장치 KR100241953B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP09567694A JP3168113B2 (ja) 1994-04-08 1994-04-08 減圧チャンバおよびこれを用いた露光装置
JP94-95676 1994-04-08
JP95-69611 1995-03-28
JP06961195A JP3416326B2 (ja) 1995-03-28 1995-03-28 処理システム及びこれを用いたデバイス生産方法

Publications (2)

Publication Number Publication Date
KR950030212A true KR950030212A (ko) 1995-11-24
KR100241953B1 KR100241953B1 (ko) 2000-03-02

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Country Status (4)

Country Link
US (1) US5871587A (ko)
EP (2) EP1026549B1 (ko)
KR (1) KR100241953B1 (ko)
DE (2) DE69535412D1 (ko)

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Publication number Priority date Publication date Assignee Title
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Publication number Publication date
DE69531019D1 (de) 2003-07-17
EP1026549A3 (en) 2000-08-16
DE69535412D1 (de) 2007-04-12
EP0676672A3 (en) 1996-07-10
KR100241953B1 (ko) 2000-03-02
EP0676672B1 (en) 2003-06-11
US5871587A (en) 1999-02-16
EP1026549A2 (en) 2000-08-09
EP0676672A2 (en) 1995-10-11
EP1026549B1 (en) 2007-02-28
DE69531019T2 (de) 2004-01-08

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