KR940010185A - 반도체장치 제조장치 및 로드로크실, 및 이 반도체장치 제조장치를 사용한 반도체장치의 제조방법 - Google Patents

반도체장치 제조장치 및 로드로크실, 및 이 반도체장치 제조장치를 사용한 반도체장치의 제조방법 Download PDF

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KR940010185A
KR940010185A KR1019930020980A KR930020980A KR940010185A KR 940010185 A KR940010185 A KR 940010185A KR 1019930020980 A KR1019930020980 A KR 1019930020980A KR 930020980 A KR930020980 A KR 930020980A KR 940010185 A KR940010185 A KR 940010185A
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heat treatment
treatment apparatus
semiconductor device
device manufacturing
load lock
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KR100267580B1 (ko
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마사기 사이또
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오오가 노리오
소니 가부시기가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

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  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

잔존산호에 의한 악영향을 없애는 것이 가능한 열처리장치, 반도체장치 제조장치 또는 로드로크실, 또는 이와같은 열처리장치 등을 사용한 박막의 처리방법을 제공한다.
열처리장치(6)는 산호모니터(14)를 구비하고 있는 것을 특징으로 한다. 반도체장치 제조장치는 산소모니터(14)를 구비한 열처리장치(6), 및 산소모니터(15)를 구비한 로드로크실(5)로 이루어진다. 박막의 처리방법을 열처리장치를 배기한 후, 산소모니터에 의해 열처리장치내의 산소농도를 측정하고, 산소농도가 소정치 이하로 된 후, 반도체기판을 열처리장치내에 반입하여, 반도체기판상에서의 박막처리를 행하는 것을 특징으로 한다.

Description

반도체장치 제조장치 및 로드로크실, 및 이 반도체장치 제조장치를 사용한 반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종형 LPCVD 장치(열처리장치) 및 로드로크실로 이루어지는 본 발명의 반도체장치 제조장치의 개략을 도시한 단면도.

Claims (10)

  1. 산소모니터를 구비하고 있는 것을 특징으로 하는 열처리장치.
  2. 제1항에 있어서, 열처리장치는 열확산장치, 스피터장치 또는 CVD 장치인 것을 특징으로 하는 열처리장치.
  3. 제1항에 있어서, 산소모니터는 매스스펙트럼아날라이저인 것을 특징으로 하는 열처리장치.
  4. 산소모니터를 구비한 열처리장치, 및 산소모니터를 구비한 로드로크실로 이루어지는 것을 특징으로 하는 반도체장치 제조장치.
  5. 제4항에 있어서, 열처리장치는 열확산장치, 스퍼터장치 또는 CVD 장치인 것을 특징으로 하는 반도체장치 제조장치.
  6. 제4항 또는 제5항에 있어서, 산소모니터는 매스스펙트럼아날라이저인 것을 특징으로 하는 반도체장치 제조장치.
  7. 산소모니터를 구비하는 것을 특징으로 하는 로드로크실.
  8. 제7항에 있어서, 산소모니터는 매스펙트럼아날라이저인 것을 특징으로 하는 로드로크실.
  9. 산소모니터를 구비한 열처리장치로 이루어지는 반도체장치 제조장치를 사용하여 반도체기판상에서의 박막처리를 행하는 방법으로서, 열처리장치를 배기한 후, 산소모니터에 의해 열처리장치 내의 산소농도를 측정하고, 산소농도가 소정치 이하로 된 후, 반도체기판을 열처리장치 내에 반입하여, 반도체기판상에서의 박막처리를 행하는것을 특징으로 하는 박막의 처리방법.
  10. 산소모니터를 구비한 로드로크실, 및 로드로크실에 연통하고 또한 산소모니터를 구비한 열처리장치로 이루어지는 반도체장치 제조장치를 사용하여 반도체기판상에서의 박막처리를 행하는 방법으로서, 로드로크실에 반도체기판을 반입하여, 로드로크실을 배기한 후, 산소모니터에 의해 로드로크실내의 산소농도를 측정하고, 열처리장치를 배기한 후, 산소모니터에 의해 열처리장치내의 산소농도를 측정하고, 로드로크실내 및 열처리장치내의 산소농도가 소정치 이하로 된 후, 로드로크실로부터 반도체기판을 열처리장치내에 반입하여, 반도체기판상에서의 박막처리를 행하는 것을 특징으로 하는 박막의 처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930020980A 1992-10-14 1993-10-11 반도체장치 제조장치 및 로드로크실,및 이 반도체장치 제조장치를 사용한 반도체장치의 제조방법 KR100267580B1 (ko)

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JP92-300,630 1992-10-14
JP30063092A JP3186262B2 (ja) 1992-10-14 1992-10-14 半導体装置の製造方法

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US6444480B1 (en) 2002-09-03
US5433785A (en) 1995-07-18
KR100267580B1 (ko) 2000-10-16
JPH06132224A (ja) 1994-05-13
JP3186262B2 (ja) 2001-07-11

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