KR950014461A - 박막형성방법 - Google Patents
박막형성방법 Download PDFInfo
- Publication number
- KR950014461A KR950014461A KR1019940019010A KR19940019010A KR950014461A KR 950014461 A KR950014461 A KR 950014461A KR 1019940019010 A KR1019940019010 A KR 1019940019010A KR 19940019010 A KR19940019010 A KR 19940019010A KR 950014461 A KR950014461 A KR 950014461A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- substrate
- thin film
- reaction chamber
- passivating
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
화학적 기상성장법에 의한 박막형성에 있어서 생산선을 높혀 양호하며 또한 안정된 성막분포 및 막저항의 재현성을 얻는다.
1 또는 2이상의 기판을 반응실에 도입하여, 이 기판에반응가스를 도입하여 기판의 위에 화학적 기상성장법에 의해 박막을 퇴적시켜서 기판처리를 행하고, 도입된 기판마다에 기판처리를 반복 박막형성방법이며, 반복되는 기판처리의 사이의 비기판 처리시에 예컨대 기판 고정구에 퇴적한 박막의 표면을 부동태로하는 부동태화 가스를 반응실에 도입한다. 부동태화 가스는 예컨대 흡착가스로 구체적으로, 불활성가스와 0.1~10%의 NH3로 된 혼합가스, 또는 불활성가스와 0.1~10%의 SiH2Cl2로부터 이루어진 혼합가스이다. 부동태화 가스로서 산화가스를 사용할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 박막형성방법장치의 주요부 구조를 도시한 단면 구성도.
제2도는 본 발명에 관한 박막형성방법에 의한 연속성막 처리에서 얻은 성막분포(막저항치와 그이 분포)의 변화를 도시한 그래프.
Claims (11)
1매 또는 2매 이상의 기판을 반응실에 반입하여, 반응실내에 반응가스를 도입하여 화학적 기상성장법에 의해 기판상에 성막처리하여, 그리고 성막처리제의 기판을 반응실에서 반출함으로서 기판처리를 반복하여 행하고, 기판처리의 사이에 기판의 주변부재에 퇴적한 박막의 표면을 부동태로 하기 위해 부동태화 가스를 반응실에 도입하는 것을 특징으로 하는 박막형성방법.
제1항에 있어서, 기판상의 박막의 성막분포가 3%에 달하기 전에 부동태화 가스를 도입하는 것을 특징으로 하는 박막형성방법.
제2항에 있어서, 매엽식에서 기판처리 하는 경우, 처리된 기판이 5매에 달하기전에 부동태화 가스를 도입하는 것을 특징으로 하는 박막형성방법.
제1항에 있어서, 부동태화 가스의 도입은 기판처리가 된 후에 매회 행하는 것을 특징으로 하는 박막형성방법.
제1항에 있어서, 부동태화 가스는 박막의 표면에 흡착하는 가스인 것을 특징으로 하는 박막형성방법.
제5항에 있어서, 흡착가스는 불활성가스와 0.1~10%의 NH3가스와의 혼합가스 또는 불활성가스와 0.1~10%의 SiH2Cl2가스와의 혼합가스인 것을 특징으로 하는 박막형성방법.
제1항에 있어서, 부동태화 가스는 박막의 표면을 산화하는 가스인 것을 특징으로 하는 박막형성방법.
제7항에 있어서, 산화가스는 불활성가스와 대기, 산소, NO, NO2중 어느 하나를 함유하는 혼합가스인 것을 특징으로 하는 박막형성방법.
제6항 또는 제8항에 있어서, 상기 불활성가스의 대신에 N2를 사용하는 것을 특징으로 하는 박막형성방법.
제1항에 있어서, 부동태화 가스의 압력을 0.1 내지 수백 Torr의 범위내로 하는 것을 특징으로 하는 박막형성방법.
제2항에 있어서, 부동태화 가스를 도입할 때, 동시에 반응실내에 있어서, 방전을 발생시키는 것을 특징으로 하는 박막형성방법.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32319693A JP3590416B2 (ja) | 1993-11-29 | 1993-11-29 | 薄膜形成方法および薄膜形成装置 |
JP93-323196 | 1993-11-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950014461A true KR950014461A (ko) | 1995-06-16 |
KR0132375B1 KR0132375B1 (ko) | 1998-04-17 |
Family
ID=18152128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940019010A KR0132375B1 (ko) | 1993-11-29 | 1994-08-01 | 박막형성방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5728629A (ko) |
JP (1) | JP3590416B2 (ko) |
KR (1) | KR0132375B1 (ko) |
TW (1) | TW258821B (ko) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1064847A (ja) * | 1996-07-16 | 1998-03-06 | Applied Materials Inc | タングステン材料の成膜方法、サセプタ及び成膜装置 |
JP3796030B2 (ja) | 1997-11-16 | 2006-07-12 | キヤノンアネルバ株式会社 | 薄膜作成装置 |
US5970383A (en) * | 1997-12-17 | 1999-10-19 | Advanced Micro Devices | Method of manufacturing a semiconductor device with improved control of deposition layer thickness |
US6635569B1 (en) * | 1998-04-20 | 2003-10-21 | Tokyo Electron Limited | Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus |
US6165894A (en) * | 1998-07-09 | 2000-12-26 | Advanced Micro Devices, Inc. | Method of reliably capping copper interconnects |
JP2000212749A (ja) * | 1999-01-22 | 2000-08-02 | Ulvac Japan Ltd | 薄膜形成装置、及び窒化タングステン薄膜製造方法 |
US6291347B1 (en) | 1999-10-08 | 2001-09-18 | Texas Instruments Incorporated | Method and system for constructing semiconductor devices |
US6342453B1 (en) * | 1999-12-03 | 2002-01-29 | Applied Materials, Inc. | Method for CVD process control for enhancing device performance |
JP4505915B2 (ja) * | 2000-01-13 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法 |
US6666924B1 (en) | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
JP2002129328A (ja) * | 2000-10-31 | 2002-05-09 | Applied Materials Inc | 気相堆積方法及び装置 |
JP2002146531A (ja) * | 2000-10-31 | 2002-05-22 | Applied Materials Inc | 気相堆積方法及び装置 |
US6468903B2 (en) * | 2000-11-15 | 2002-10-22 | Asm International N.V. | Pre-treatment of reactor parts for chemical vapor deposition reactors |
JP4669605B2 (ja) * | 2000-11-20 | 2011-04-13 | 東京エレクトロン株式会社 | 半導体製造装置のクリーニング方法 |
US6432822B1 (en) * | 2001-05-02 | 2002-08-13 | Advanced Micro Devices, Inc. | Method of improving electromigration resistance of capped Cu |
US6429128B1 (en) * | 2001-07-12 | 2002-08-06 | Advanced Micro Devices, Inc. | Method of forming nitride capped Cu lines with reduced electromigration along the Cu/nitride interface |
US6579730B2 (en) * | 2001-07-18 | 2003-06-17 | Applied Materials, Inc. | Monitoring process for oxide removal |
US6720259B2 (en) * | 2001-10-02 | 2004-04-13 | Genus, Inc. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
US6825051B2 (en) * | 2002-05-17 | 2004-11-30 | Asm America, Inc. | Plasma etch resistant coating and process |
US6716753B1 (en) | 2002-07-29 | 2004-04-06 | Taiwan Semiconductor Manufacturing Company | Method for forming a self-passivated copper interconnect structure |
WO2004038774A2 (en) * | 2002-10-25 | 2004-05-06 | Unaxis Balzers Ltd. | Method for producing semi-conducting devices and devices obtained with this method |
KR100491396B1 (ko) * | 2002-12-03 | 2005-05-25 | 삼성전자주식회사 | 반도체 소자의 피이-테오스(pe-teos)막 형성 방법 |
KR100771799B1 (ko) * | 2003-02-07 | 2007-10-30 | 도쿄 엘렉트론 가부시키가이샤 | 피처리 기판을 처리하는 반도체 처리 방법 및 장치 |
JP4959333B2 (ja) * | 2003-05-09 | 2012-06-20 | エーエスエム アメリカ インコーポレイテッド | 化学的不活性化を通じたリアクタ表面のパシベーション |
US7914847B2 (en) * | 2003-05-09 | 2011-03-29 | Asm America, Inc. | Reactor surface passivation through chemical deactivation |
US6974781B2 (en) * | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
US7767926B2 (en) * | 2006-03-29 | 2010-08-03 | Tokyo Electron Limited | Method and system for dry development of a multi-layer mask using sidewall passivation and mask passivation |
US8791018B2 (en) * | 2006-12-19 | 2014-07-29 | Spansion Llc | Method of depositing copper using physical vapor deposition |
US8293658B2 (en) * | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
US9223203B2 (en) | 2011-07-08 | 2015-12-29 | Asm International N.V. | Microcontact printed films as an activation layer for selective atomic layer deposition |
Family Cites Families (13)
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US4851295A (en) * | 1984-03-16 | 1989-07-25 | Genus, Inc. | Low resistivity tungsten silicon composite film |
US4510172A (en) * | 1984-05-29 | 1985-04-09 | International Business Machines Corporation | Technique for thin insulator growth |
US4737474A (en) * | 1986-11-17 | 1988-04-12 | Spectrum Cvd, Inc. | Silicide to silicon bonding process |
US5158644A (en) * | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US5207836A (en) * | 1989-08-25 | 1993-05-04 | Applied Materials, Inc. | Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus |
JPH03130368A (ja) * | 1989-09-22 | 1991-06-04 | Applied Materials Inc | 半導体ウェーハプロセス装置の洗浄方法 |
US5198298A (en) * | 1989-10-24 | 1993-03-30 | Advanced Micro Devices, Inc. | Etch stop layer using polymers |
JPH04345024A (ja) * | 1991-05-22 | 1992-12-01 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3326538B2 (ja) * | 1991-10-24 | 2002-09-24 | 東京エレクトロン株式会社 | コールドウォール形成膜処理装置 |
US5326723A (en) * | 1992-09-09 | 1994-07-05 | Intel Corporation | Method for improving stability of tungsten chemical vapor deposition |
US5434109A (en) * | 1993-04-27 | 1995-07-18 | International Business Machines Corporation | Oxidation of silicon nitride in semiconductor devices |
JPH07176484A (ja) * | 1993-06-28 | 1995-07-14 | Applied Materials Inc | 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法 |
US5565382A (en) * | 1993-10-12 | 1996-10-15 | Applied Materials, Inc. | Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas |
-
1993
- 1993-11-29 JP JP32319693A patent/JP3590416B2/ja not_active Expired - Fee Related
-
1994
- 1994-08-01 KR KR1019940019010A patent/KR0132375B1/ko not_active IP Right Cessation
- 1994-09-23 US US08/311,681 patent/US5728629A/en not_active Expired - Lifetime
- 1994-09-30 TW TW083109033A patent/TW258821B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3590416B2 (ja) | 2004-11-17 |
US5728629A (en) | 1998-03-17 |
KR0132375B1 (ko) | 1998-04-17 |
TW258821B (ko) | 1995-10-01 |
JPH07153704A (ja) | 1995-06-16 |
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