KR910007089A - 반도체 웨이퍼 처리 장치용 세척 방법 - Google Patents

반도체 웨이퍼 처리 장치용 세척 방법 Download PDF

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Publication number
KR910007089A
KR910007089A KR1019900015012A KR900015012A KR910007089A KR 910007089 A KR910007089 A KR 910007089A KR 1019900015012 A KR1019900015012 A KR 1019900015012A KR 900015012 A KR900015012 A KR 900015012A KR 910007089 A KR910007089 A KR 910007089A
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South Korea
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reducing gas
fluorine
contacting
cvd deposition
chamber
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KR1019900015012A
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English (en)
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KR0184269B1 (ko
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나가씨마 마꼬또
꼬바야씨 나오아끼
용 제리
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제임스 조셉 드롱
어플라이드 머티어리얼스 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

내용 없음

Description

반도체 웨이퍼 처리 장치용 세척 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 본 발명의 개선된 세척 방법을 설명하는 흐름도이다.

Claims (10)

  1. 플라즈마 불소 세척 단계로 부터 CVD증착 챔버에 남은 불소 잔류물을 하나 이상의 환원기체와 접촉시키는 단계로 구성됨을 특징으로 하는 반도체 웨이퍼 처리 장치에서 CVD 증착 챔버를 세척하기 위한 방법.
  2. 제 1 항에 있어서, 상기 불소 잔류물이 하나 이상의 환원기체와 접촉하는 단계가 상기 CVD 증착 캠버내에 하나 이상의 고체 반응 생성물을 형성하기 위해 상기 환원기체가 상기 불소 잔류물과 반응하는 단계를 더 포함함을 특징으로 하는 방법.
  3. 제 1 항에 있어서, 상기 불소 잔류물이 하나 이상의 환원기체와 접촉하는 단계가 하나 이상의 기체 반응 생성물을 형성하기 위해 상기 환원기체가 상기 불소 잔류물과 반응하는 단계를 더 포함하고, 상기 CVD증착 챔버로부터 하나 이상의 기체 반응 생성물의 하나 이상의 부분을 제거하는 단계를 더 포함함을 특징으로 하는 방법.
  4. 제 1 항에 있어서, 상기 불소 잔류물이 하나 이상의 환원기체와 접촉하는 단계가 상기 CVD챔버내에 하나 이상의 고체 반응 생성물과 하나 이상의 기체 반응 생성물을 형성하기 위해 상기 하나 이상의 환원기체가 상기 불소 잔류물과 반응하는 단계를 더 포함함을 특징으로 하는 방법.
  5. 제 2 항에 있어서, 하나 이상의 고체 반응 생성물을 형성하기 위해 상기 불소 잔류물이 상기 하나 이상의 환원기체와 반응하는 상기 단계는 약 10분 이상동안 상기 불소가 상기 훤원과 접촉하는 단계를 더 포함함을 특징으로 하는 방법.
  6. 제 1 항에 있어서, 상기 불소 잔류물이 하나 이상의 환원기체와 접촉하는 단계가 약 250 내지 500℃온도의 CVD증착 챔버에 유지하면서 상기 불소 잔류물이 상기 환원기체와 접촉하는 단계를 더 포함함을 특징으로 하는 방법.
  7. 제 1 항에 있어서, 상기 불소 잔류물이 하나 이상의 환원기체와 접촉하는 단계가 약 100sccm 이상의 비율로 상기 환원기체가 상기 CVD 증착 챔버내에 흐르는 단계를 더 포함함을 특징으로 하는 방법.
  8. 제 1 항에 있어서, 상기 불소 잔류물이 하나 이상의 환원기체와 접촉하는 단계가 상기 접촉 단계중 상기 CVD 증착 챔버내에서 약 10-3토르 이상의 압력에서 유지되는 것을 더 포함함을 특징으로 하는 방법.
  9. 약 250℃이상온도 및 약 10-3트르 이상 압력이 상기 CVD 증착 챔버에 유지하면서, 하나 이상의 반응 생성물을 형성하기 위해 플라즈마 불소 세척 단계로부터 상기 챔버에 남은 불소 잔류물을 약 10초이상의 시간동안 100sccm 이상 비율로 상기 챔버에 흐르는 하나 이상의 환원기체와 접촉시키는 단계로 구성됨을 특징으로 하는 반도체 웨이퍼 처리 장치에서 CVD 증착 챔버를 세척하기 위한 방법.
  10. 약 250 내지 500℃온도 및 약 10-3트르 이상 압력의 CVD 증착 챔버에 유지하면서, 하나 이상의 반응 생성물을 형성하기 위해 플라즈마 불소 세척단계로부터 상기 챔버에 남은 불소 잔류물을 약 10초이상의 시간동안 약 100 내지 500sccm 비율로 상기 챔버에 흐르는 실란(SiH4), 암모니아, 수소 포스핀(PH3), 디보린(B2H6) 및 아르신(ArH3)로 구성되는 그룹으로부터 선택한 하나 이상의 환원기체와 접촉시키는 단계로 구성됨을 특징으로 하는 반도체 웨이퍼 처리 장치에서 CVD 증착 챔버를 세척하기 위한 방법.
    ※ 참고사항 : 최초 출원 내용에 의하여 공개하는 것임.
KR1019900015012A 1989-09-22 1990-09-21 반도체 웨이퍼 처리 장치용 세척 방법 KR0184269B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41143389A 1989-09-22 1989-09-22
US7/411,433 1989-09-22
US07/411,433 1989-09-22

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KR910007089A true KR910007089A (ko) 1991-04-30
KR0184269B1 KR0184269B1 (ko) 1999-04-15

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