KR970023672A - 박막제조방법 - Google Patents
박막제조방법 Download PDFInfo
- Publication number
- KR970023672A KR970023672A KR1019960044738A KR19960044738A KR970023672A KR 970023672 A KR970023672 A KR 970023672A KR 1019960044738 A KR1019960044738 A KR 1019960044738A KR 19960044738 A KR19960044738 A KR 19960044738A KR 970023672 A KR970023672 A KR 970023672A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film manufacturing
- silicon carbide
- room temperature
- fluoride gas
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052799 carbon Inorganic materials 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims abstract 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims abstract 2
- OMRRUNXAWXNVFW-UHFFFAOYSA-N fluoridochlorine Chemical compound ClF OMRRUNXAWXNVFW-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Abstract
고순도이면서 고품질인 박막을 성장시킬수 있는 박막제조방법을 제공한다. 청정화 공정을 저온화 하기 위해 크리닝 가스로서 3불화염소를 실온 -500℃에서 사용하는 한편 유리규소 밀 유리탄소의 비율이 합하여 2wt% 이하의 탄화규소로 표면이 형성된 부재를 사용하여 부재의 부식을 억제하고, 입자발생을 방지한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본발명의 박막 제조방법의 실시에 사용되는 박막성장장치의 일예를 보여주는 개략단면 설명도.
Claims (3)
- 유리규소 및 유리 탄소의 비율이 합하여 2wt%이하인 탄화규소로 표면이 형성된 부재를 갖는 반응용기내에 실온 -500℃로 불화염소 가스를 도입 하여, 반도체기판상에 박막을 성장시킬 때 부착한 퇴적물을 에칭 제거하는 단계를 갖는 것을 특징으로 하는 박막 제조방법.
- 제1항에 있어서, 상기 불화염소가스는 농도가 0.01-10체적%의 3불화 염소인 것을 특징으로 하는 방법.
- 제1항 또는 제2항에 있어서, 상기 탄화규소로 표면이 형성된 부재는 기판의 보지구인 것을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP95-280891 | 1995-10-27 | ||
| JP7280891A JPH09129557A (ja) | 1995-10-27 | 1995-10-27 | 薄膜の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970023672A true KR970023672A (ko) | 1997-05-30 |
Family
ID=17631388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960044738A KR970023672A (ko) | 1995-10-27 | 1996-10-09 | 박막제조방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5858881A (ko) |
| EP (1) | EP0770704B1 (ko) |
| JP (1) | JPH09129557A (ko) |
| KR (1) | KR970023672A (ko) |
| DE (1) | DE69601452T2 (ko) |
| MY (1) | MY132332A (ko) |
| TW (1) | TW322641B (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG71182A1 (en) * | 1997-12-26 | 2000-03-21 | Canon Kk | Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method |
| TWI232891B (en) | 1999-08-02 | 2005-05-21 | Tokyo Electron Ltd | SiC material, semiconductor device fabricating system and SiC material forming method |
| JP4529261B2 (ja) * | 2000-09-13 | 2010-08-25 | 東京エレクトロン株式会社 | 複合金属酸化物膜の除去方法、クリーニング方法及びエッチング方法 |
| JP2002313888A (ja) * | 2001-04-09 | 2002-10-25 | Ibiden Co Ltd | 半導体用治具 |
| JP2007141895A (ja) * | 2005-11-14 | 2007-06-07 | Tokyo Electron Ltd | 載置台構造及び成膜装置 |
| JP6400227B2 (ja) | 2016-04-05 | 2018-10-03 | 関東電化工業株式会社 | 半導体製造装置のクリーニング方法 |
| US10982811B2 (en) * | 2016-04-05 | 2021-04-20 | Kanto Denka Kogyo, Co., Ltd. | Material, storage container using the material, valve attached to the storage container, method of storing ClF and method of using ClF storage container |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
| JP2720966B2 (ja) * | 1987-07-13 | 1998-03-04 | セントラル硝子株式会社 | 薄膜を付着した部品の再生利用方法 |
| JP2918892B2 (ja) * | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
| JP3140068B2 (ja) * | 1991-01-31 | 2001-03-05 | 東京エレクトロン株式会社 | クリーニング方法 |
| US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| CA2099788A1 (en) * | 1992-07-31 | 1994-02-01 | Michael A. Pickering | Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom |
-
1995
- 1995-10-27 JP JP7280891A patent/JPH09129557A/ja active Pending
-
1996
- 1996-10-09 KR KR1019960044738A patent/KR970023672A/ko not_active Application Discontinuation
- 1996-10-12 TW TW085112473A patent/TW322641B/zh active
- 1996-10-17 US US08/729,367 patent/US5858881A/en not_active Expired - Fee Related
- 1996-10-21 DE DE69601452T patent/DE69601452T2/de not_active Expired - Fee Related
- 1996-10-21 EP EP96307621A patent/EP0770704B1/en not_active Expired - Lifetime
- 1996-10-24 MY MYPI96004423A patent/MY132332A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| MY132332A (en) | 2007-10-31 |
| EP0770704B1 (en) | 1999-01-27 |
| TW322641B (ko) | 1997-12-11 |
| EP0770704A1 (en) | 1997-05-02 |
| DE69601452D1 (de) | 1999-03-11 |
| DE69601452T2 (de) | 1999-09-23 |
| US5858881A (en) | 1999-01-12 |
| JPH09129557A (ja) | 1997-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |