DE69601452D1 - Verfahren zur Aufbringung einer dünnen Schicht - Google Patents

Verfahren zur Aufbringung einer dünnen Schicht

Info

Publication number
DE69601452D1
DE69601452D1 DE69601452T DE69601452T DE69601452D1 DE 69601452 D1 DE69601452 D1 DE 69601452D1 DE 69601452 T DE69601452 T DE 69601452T DE 69601452 T DE69601452 T DE 69601452T DE 69601452 D1 DE69601452 D1 DE 69601452D1
Authority
DE
Germany
Prior art keywords
applying
thin layer
thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69601452T
Other languages
English (en)
Other versions
DE69601452T2 (de
Inventor
Hitoshi Habuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69601452D1 publication Critical patent/DE69601452D1/de
Publication of DE69601452T2 publication Critical patent/DE69601452T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
DE69601452T 1995-10-27 1996-10-21 Verfahren zur Aufbringung einer dünnen Schicht Expired - Fee Related DE69601452T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7280891A JPH09129557A (ja) 1995-10-27 1995-10-27 薄膜の製造方法

Publications (2)

Publication Number Publication Date
DE69601452D1 true DE69601452D1 (de) 1999-03-11
DE69601452T2 DE69601452T2 (de) 1999-09-23

Family

ID=17631388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601452T Expired - Fee Related DE69601452T2 (de) 1995-10-27 1996-10-21 Verfahren zur Aufbringung einer dünnen Schicht

Country Status (7)

Country Link
US (1) US5858881A (de)
EP (1) EP0770704B1 (de)
JP (1) JPH09129557A (de)
KR (1) KR970023672A (de)
DE (1) DE69601452T2 (de)
MY (1) MY132332A (de)
TW (1) TW322641B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG71182A1 (en) 1997-12-26 2000-03-21 Canon Kk Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method
WO2001009407A1 (fr) 1999-08-02 2001-02-08 Tokyo Electron Limited Materiau au carbure de silice, equipement de traitement de semi-conducteurs, et procede d'elaboration de materiau au carbure de silice
JP4529261B2 (ja) * 2000-09-13 2010-08-25 東京エレクトロン株式会社 複合金属酸化物膜の除去方法、クリーニング方法及びエッチング方法
JP2002313888A (ja) * 2001-04-09 2002-10-25 Ibiden Co Ltd 半導体用治具
JP2007141895A (ja) * 2005-11-14 2007-06-07 Tokyo Electron Ltd 載置台構造及び成膜装置
KR102322973B1 (ko) * 2016-04-05 2021-11-08 칸토 덴카 코교 가부시키가이샤 재료, 이 재료를 이용한 보존 용기, 이 보존 용기에 부착되는 밸브, 및 ClF의 보존 방법, ClF 보존 용기의 사용 방법
CN108885995A (zh) * 2016-04-05 2018-11-23 关东电化工业株式会社 半导体制造装置的清洁方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
JP2720966B2 (ja) * 1987-07-13 1998-03-04 セントラル硝子株式会社 薄膜を付着した部品の再生利用方法
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
JP3140068B2 (ja) * 1991-01-31 2001-03-05 東京エレクトロン株式会社 クリーニング方法
US5443686A (en) * 1992-01-15 1995-08-22 International Business Machines Corporation Inc. Plasma CVD apparatus and processes
CA2099788A1 (en) * 1992-07-31 1994-02-01 Michael A. Pickering Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom

Also Published As

Publication number Publication date
DE69601452T2 (de) 1999-09-23
MY132332A (en) 2007-10-31
EP0770704A1 (de) 1997-05-02
US5858881A (en) 1999-01-12
KR970023672A (ko) 1997-05-30
TW322641B (de) 1997-12-11
JPH09129557A (ja) 1997-05-16
EP0770704B1 (de) 1999-01-27

Similar Documents

Publication Publication Date Title
DE794839T1 (de) Verfahren zur beschichtung einer oberfläche
DE69630924D1 (de) Flüssige Zusammensetzung und Verfahren zur Bildung einer rostsicheren Schicht
DE69621723D1 (de) Verfahren zur Herstellung einer Schicht
DE69515926T2 (de) Verfahren zur Züchtung einer Halbleiterverbindungsschicht
DE69636618D1 (de) Verfahren zur behandlung einer substratoberfläche und behandlungsmittel hierfür
DE69821429D1 (de) Vorrichtung und Verfahren zur Herstellung einer Dünnschicht einer Verbindung
DE69621750T2 (de) Verfahren und Gerät zur Abscheidung einer Antireflexbeschichtung
DE69631233D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69807949T2 (de) Verfahren und Vorrichtung zur Herstellung einer Dünnschicht
DE69634194D1 (de) Verfahren zur bearbeitung einer oberfläche
DE69628441D1 (de) Verfahren zur herstellung von beschichteten kunststoffoberflächen
DE59603566D1 (de) Verfahren zur mehrschichtlackierung
DE69801382D1 (de) Verfahren zur herstellung einer Beschichtung von monomolekulares Dicke auf einem Substrat
DE69618900D1 (de) Verfahren und vorrichtung zur interpolation einer formfreien oberfläche
FI972639A (fi) Menetelmä ja laite alustakerroksen lakkaamista tai päällystystä varten
DE59802791D1 (de) Verfahren zur sputterbeschichtung von oberflächen
DE69933427D1 (de) Verfahren zur Entfernung einer Wärmedämmschicht
DE69926993D1 (de) Verfahren zur herstellung einer mehrschichtigen deckschicht
DE69601784T2 (de) Verfahren zur selektiven entfernung einer metallischen schicht von einem nichtmetallischen substrat
DE69606871T2 (de) Verfahren zur herstellung überzogener gegenstände
DE69601452D1 (de) Verfahren zur Aufbringung einer dünnen Schicht
DE69615642T2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69811800D1 (de) Verfahren zur Ablagerung einer dielektrischen Ta2O5-Schicht
DE59603312D1 (de) Verfahren zur reaktiven Schichtabscheidung
DE69612025T2 (de) Härtbare Beschichtungszusammensetzung und Verfahren zur Bildung einer Deckschicht

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee