DE69621750T2 - Verfahren und Gerät zur Abscheidung einer Antireflexbeschichtung - Google Patents

Verfahren und Gerät zur Abscheidung einer Antireflexbeschichtung

Info

Publication number
DE69621750T2
DE69621750T2 DE69621750T DE69621750T DE69621750T2 DE 69621750 T2 DE69621750 T2 DE 69621750T2 DE 69621750 T DE69621750 T DE 69621750T DE 69621750 T DE69621750 T DE 69621750T DE 69621750 T2 DE69621750 T2 DE 69621750T2
Authority
DE
Germany
Prior art keywords
depositing
reflective coating
reflective
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69621750T
Other languages
English (en)
Other versions
DE69621750D1 (de
Inventor
David Cheung
Joe Feng
Judy H Huang
Wai-Fan Yau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69621750D1 publication Critical patent/DE69621750D1/de
Application granted granted Critical
Publication of DE69621750T2 publication Critical patent/DE69621750T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Materials For Photolithography (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69621750T 1995-12-05 1996-12-05 Verfahren und Gerät zur Abscheidung einer Antireflexbeschichtung Expired - Fee Related DE69621750T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56733895A 1995-12-05 1995-12-05
US08/672,888 US5968324A (en) 1995-12-05 1996-06-28 Method and apparatus for depositing antireflective coating

Publications (2)

Publication Number Publication Date
DE69621750D1 DE69621750D1 (de) 2002-07-18
DE69621750T2 true DE69621750T2 (de) 2003-01-30

Family

ID=27074447

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621750T Expired - Fee Related DE69621750T2 (de) 1995-12-05 1996-12-05 Verfahren und Gerät zur Abscheidung einer Antireflexbeschichtung

Country Status (5)

Country Link
US (2) US5968324A (de)
EP (1) EP0778496B1 (de)
JP (2) JP3930932B2 (de)
KR (1) KR100459982B1 (de)
DE (1) DE69621750T2 (de)

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US6274292B1 (en) 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
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US6372668B2 (en) * 2000-01-18 2002-04-16 Advanced Micro Devices, Inc. Method of forming silicon oxynitride films
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US6852474B2 (en) * 2002-04-30 2005-02-08 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
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KR20050115634A (ko) * 2004-06-04 2005-12-08 삼성전자주식회사 플라즈마 강화 화학기상증착설비를 이용한 화학기상증착방법
US7288484B1 (en) 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US7202176B1 (en) * 2004-12-13 2007-04-10 Novellus Systems, Inc. Enhanced stripping of low-k films using downstream gas mixing
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US7657143B2 (en) * 2005-10-07 2010-02-02 Novatronix Corporation Method for improving refractive index control in PECVD deposited a-SiNy films
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US7740768B1 (en) 2006-10-12 2010-06-22 Novellus Systems, Inc. Simultaneous front side ash and backside clean
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US20080299747A1 (en) * 2007-05-30 2008-12-04 Asm Japan K.K. Method for forming amorphouse silicon film by plasma cvd
US7930657B2 (en) 2008-01-23 2011-04-19 Micron Technology, Inc. Methods of forming photomasks
EP2245512B1 (de) * 2008-01-29 2019-09-11 Brewer Science, Inc. On-track-prozess zur strukturierung einer hardmaske durch mehrere dunkelfeldbelichtungen
US8591661B2 (en) 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
KR101770008B1 (ko) 2009-12-11 2017-08-21 노벨러스 시스템즈, 인코포레이티드 고주입량 주입 박리 전에 실리콘을 보호하기 위한 개선된 패시베이션 공정
US20110272024A1 (en) * 2010-04-13 2011-11-10 Applied Materials, Inc. MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS
US8507191B2 (en) 2011-01-07 2013-08-13 Micron Technology, Inc. Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
JP6336719B2 (ja) * 2013-07-16 2018-06-06 株式会社ディスコ プラズマエッチング装置
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
JP6903040B2 (ja) * 2018-09-21 2021-07-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
WO2021150470A1 (en) * 2020-01-22 2021-07-29 IntriEnergy Inc. Method of forming anti-reflection coatings
CN115029687A (zh) * 2021-02-24 2022-09-09 中国科学院微电子研究所 抗反射膜形成方法

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Also Published As

Publication number Publication date
EP0778496A3 (de) 1998-10-14
US5968324A (en) 1999-10-19
KR970052032A (ko) 1997-07-29
US7070657B1 (en) 2006-07-04
JP3930932B2 (ja) 2007-06-13
EP0778496B1 (de) 2002-06-12
KR100459982B1 (ko) 2005-04-06
JP2007180561A (ja) 2007-07-12
DE69621750D1 (de) 2002-07-18
JPH09246180A (ja) 1997-09-19
EP0778496A2 (de) 1997-06-11

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee