KR910015014A - 반도체기판의 매엽식 표면처리방식 - Google Patents
반도체기판의 매엽식 표면처리방식 Download PDFInfo
- Publication number
- KR910015014A KR910015014A KR1019910001532A KR910001532A KR910015014A KR 910015014 A KR910015014 A KR 910015014A KR 1019910001532 A KR1019910001532 A KR 1019910001532A KR 910001532 A KR910001532 A KR 910001532A KR 910015014 A KR910015014 A KR 910015014A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor substrate
- surface treatment
- treatment method
- wafer surface
- single wafer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 title claims description 4
- 238000004381 surface treatment Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 150000008064 anhydrides Chemical class 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 웨이퍼로드(wafer load)실을 포함한 전체에 N-퍼지(purge)기구를 구비한 무수불산처리 장치의 종단면도, 제4도는 본 발명에서 사용되는 반도체기판·로드(load)실에 N-퍼지(purge)기구를 구비한 무수불산처리장치의 종단면도, 제5도는 본 발명에 이용되는 무수불산처리장치에서의 2개의 다른 무수불산처리조건에서의 각각의 롯트(lot)내 및 롯트사이의 열산화막 에칭량의 균일성을 나타낸 그래프이다.
Claims (1)
- 일정한 수증기 농도로 제어되는 질소·산소 및 아르곤으로 이루어진 무리로 부터 선정되는 한 종류 또는 복수의 가스 분위기내에서 퍼지한 반도체기판을 적어도 불산가스가 포함된 기상분위기중에서 처리하는 것을 특징으로 하는 반도체기판의 매엽식표면 처리방식.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02-20068 | 1990-01-30 | ||
| JP2020068A JP2504598B2 (ja) | 1990-01-30 | 1990-01-30 | 半導体基板の枚葉式表面処理方法 |
| JP02-020068 | 1990-01-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910015014A true KR910015014A (ko) | 1991-08-31 |
| KR940000917B1 KR940000917B1 (ko) | 1994-02-04 |
Family
ID=12016781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910001532A KR940000917B1 (ko) | 1990-01-30 | 1991-01-30 | 반도체기판의 매엽식 표면처리방식 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2504598B2 (ko) |
| KR (1) | KR940000917B1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7189291B2 (en) | 2003-06-02 | 2007-03-13 | Entegris, Inc. | Method for the removal of airborne molecular contaminants using oxygen gas mixtures |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60150633A (ja) * | 1984-01-18 | 1985-08-08 | Kokusai Electric Co Ltd | プラズマエツチング装置のロ−ドロツク室 |
| JPS61148820A (ja) * | 1984-12-24 | 1986-07-07 | Hitachi Ltd | 処理方法 |
-
1990
- 1990-01-30 JP JP2020068A patent/JP2504598B2/ja not_active Expired - Fee Related
-
1991
- 1991-01-30 KR KR1019910001532A patent/KR940000917B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2504598B2 (ja) | 1996-06-05 |
| KR940000917B1 (ko) | 1994-02-04 |
| JPH03225824A (ja) | 1991-10-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030130 Year of fee payment: 10 |
|
| LAPS | Lapse due to unpaid annual fee |