KR900017120A - 플라즈마 처리방법 - Google Patents

플라즈마 처리방법 Download PDF

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KR900017120A
KR900017120A KR1019900005427A KR900005427A KR900017120A KR 900017120 A KR900017120 A KR 900017120A KR 1019900005427 A KR1019900005427 A KR 1019900005427A KR 900005427 A KR900005427 A KR 900005427A KR 900017120 A KR900017120 A KR 900017120A
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South Korea
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plasma processing
gas
inert gas
introduction
processing method
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KR1019900005427A
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English (en)
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KR0156244B1 (ko
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히로시 고지마
요시후미 다하라
이즈미 아라이
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고다까 토시오
도오교오 에레구토론 가부시끼가이샤
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Publication of KR900017120A publication Critical patent/KR900017120A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Public Health (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Epidemiology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

플라즈마 처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는, 본 발명의 방법에서 사용하는 플라즈마 에칭장치의 개략구성을 나타내는 설명도,
제3도는, 에칭처리의 전후에 있어서의 에칭가스의 공급과 N2가스의 공급의 공급의 관계를 나타내는 타이밍 챠이트 이다.

Claims (8)

  1. 플라즈마 처리용기(50)내의 얹어놓는대(30)상에 피처리체(42)를 얹어놓고, 이 피처리체(42)에 플라즈마 처리가스에 의한 플라즈마 처리를 실시하는 공정과, 상기 플라즈마 처리시간외의 기간의 적어도 플라즈마 처리가스의 잔류기간에 상기 플라즈마 처리용기(50)내에 불활성가스를 도입하는 공정과를 구비하는 플라즈마 처리 방법.
  2. 제1항에 있어서, 플라즈마 처리시간 이외의 기간은, 플라즈마 처리의 적전의 기간 또는 직후의 기간인 플라즈마 처리방법.
  3. 제1항에 있어서, 얹어놓는(30)는, 피처리체(42)의 온도를 소정온도로 하기 위하여 냉각되어 있는 것인 플라즈마 처리방법.
  4. 제1항에 있어서, 플라즈마 처리용기(50)내로의 불황성 가스의 도입은, 얹어놓는대(30)의 표면으로 내뿜어 지도록 행하는 것인 플라즈마 처리방법.
  5. 제1항에 있어서, 플라즈마 처리용기(50)내로의 불황성 가스의 도입은, 에칭처리의 정지에 동기하여 행하는 것인 플라즈마 처리방법.
  6. 제5항에 있어서, 플라즈마 처리용기(50)내로의 불황성 가스의 도입은, 에칭가스의 공급과 바꾸어서 행하는 것인 플라즈마 처리방법.
  7. 제6항에 있어서, 불황성 가스는, N2가스인 플라즈마 처리방법.
  8. 제6항에 있어서, 플라즈마 처리용기 내로의 불황성 가스의 도입은, 에칭가스의 공급과 바꾸어서 행하는 것이며, 또한, 배기포트(52)를 통하여 플라즈마 처리용기(50)의 외부로 유출시키면서 행하는 것인 플라즈마 처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900005427A 1989-04-18 1990-04-18 플라즈마 처리방법 KR0156244B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP99068 1989-04-18
JP1-99068 1989-04-18
JP9906889 1989-04-18

Publications (2)

Publication Number Publication Date
KR900017120A true KR900017120A (ko) 1990-11-15
KR0156244B1 KR0156244B1 (ko) 1998-12-01

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US (1) US5858258A (ko)
EP (1) EP0393637B1 (ko)
KR (1) KR0156244B1 (ko)
DE (1) DE69006622T2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038863B (zh) * 2001-02-15 2011-07-06 东京毅力科创株式会社 被处理件的处理方法及处理装置
JP4115155B2 (ja) 2002-04-11 2008-07-09 東京エレクトロン株式会社 プラズマ処理装置の真空処理室内部品の帯電抑制方法
JP4294976B2 (ja) * 2003-02-27 2009-07-15 東京エレクトロン株式会社 基板処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491173A (en) * 1982-05-28 1985-01-01 Temptronic Corporation Rotatable inspection table
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4863561A (en) * 1986-12-09 1989-09-05 Texas Instruments Incorporated Method and apparatus for cleaning integrated circuit wafers
JPS63204726A (ja) * 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US4915777A (en) * 1987-07-16 1990-04-10 Texas Instruments Incorporated Method for etching tungsten
US4998979A (en) * 1988-06-06 1991-03-12 Canon Kabushiki Kaisha Method for washing deposition film-forming device
EP0353719A3 (de) * 1988-08-05 1991-04-10 Siemens Aktiengesellschaft Metallkontakt mit überhängenden Kanten und Herstellungsverfahren

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EP0393637B1 (en) 1994-02-16
DE69006622D1 (de) 1994-03-24
US5858258A (en) 1999-01-12
KR0156244B1 (ko) 1998-12-01
EP0393637A1 (en) 1990-10-24
DE69006622T2 (de) 1994-07-14

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