SE9600524D0 - A method and a device for oxidation of a semiconductor layer of SiC - Google Patents
A method and a device for oxidation of a semiconductor layer of SiCInfo
- Publication number
- SE9600524D0 SE9600524D0 SE9600524A SE9600524A SE9600524D0 SE 9600524 D0 SE9600524 D0 SE 9600524D0 SE 9600524 A SE9600524 A SE 9600524A SE 9600524 A SE9600524 A SE 9600524A SE 9600524 D0 SE9600524 D0 SE 9600524D0
- Authority
- SE
- Sweden
- Prior art keywords
- semiconductor layer
- sic
- oxidation
- layer
- sio2
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 230000003647 oxidation Effects 0.000 title abstract 3
- 238000007254 oxidation reaction Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000010410 layer Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000002344 surface layer Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9600524A SE9600524D0 (sv) | 1996-02-14 | 1996-02-14 | A method and a device for oxidation of a semiconductor layer of SiC |
| US08/612,484 US5698472A (en) | 1996-02-14 | 1996-03-07 | Method and a device for oxidation of a semiconductor layer of SIC |
| PCT/SE1997/000231 WO1997030473A1 (en) | 1996-02-14 | 1997-02-14 | A METHOD AND A DEVICE FOR OXIDATION OF A SEMICONDUCTOR LAYER OF SiC |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9600524A SE9600524D0 (sv) | 1996-02-14 | 1996-02-14 | A method and a device for oxidation of a semiconductor layer of SiC |
| US08/612,484 US5698472A (en) | 1996-02-14 | 1996-03-07 | Method and a device for oxidation of a semiconductor layer of SIC |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE9600524D0 true SE9600524D0 (sv) | 1996-02-14 |
Family
ID=26662511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9600524A SE9600524D0 (sv) | 1996-02-14 | 1996-02-14 | A method and a device for oxidation of a semiconductor layer of SiC |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5698472A (sv) |
| SE (1) | SE9600524D0 (sv) |
| WO (1) | WO1997030473A1 (sv) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143081A (en) * | 1996-07-12 | 2000-11-07 | Tokyo Electron Limited | Film forming apparatus and method, and film modifying apparatus and method |
| US6174651B1 (en) | 1999-01-14 | 2001-01-16 | Steag Rtp Systems, Inc. | Method for depositing atomized materials onto a substrate utilizing light exposure for heating |
| US6248618B1 (en) | 1999-10-12 | 2001-06-19 | Chartered Semiconductor Manufacturing Ltd. | Method of fabrication of dual gate oxides for CMOS devices |
| JP3551909B2 (ja) * | 1999-11-18 | 2004-08-11 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| US6407014B1 (en) * | 1999-12-16 | 2002-06-18 | Philips Electronics North America Corporation | Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices |
| US6569249B1 (en) | 2000-04-18 | 2003-05-27 | Clemson University | Process for forming layers on substrates |
| JP3455171B2 (ja) * | 2000-08-30 | 2003-10-14 | 宮崎沖電気株式会社 | 真空紫外光ｃｖｄによる層間絶縁膜の製造方法 |
| US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
| US8242030B2 (en) * | 2009-09-25 | 2012-08-14 | International Business Machines Corporation | Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation |
| CN110199380B (zh) | 2017-01-17 | 2023-03-28 | Zf 腓德烈斯哈芬股份公司 | 在碳化硅上制造绝缘层的方法 |
| CN109801840A (zh) * | 2018-12-04 | 2019-05-24 | 中国科学院微电子研究所 | 一种改善SiC器件界面特征的方法及SiC器件 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4474829A (en) * | 1981-11-23 | 1984-10-02 | Hughes Aircraft Company | Low-temperature charge-free process for forming native oxide layers |
| JPS628519A (ja) * | 1985-07-04 | 1987-01-16 | Nec Corp | 不純物拡散層の形成方法 |
| JPS62174925A (ja) * | 1986-01-28 | 1987-07-31 | Sharp Corp | 炭化珪素半導体の酸化方法 |
| US5178682A (en) * | 1988-06-21 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate and apparatus therefor |
| JPH01319944A (ja) * | 1988-06-21 | 1989-12-26 | Mitsubishi Electric Corp | 半導体基板表面に薄膜を形成する方法およびその装置 |
| TW260806B (sv) * | 1993-11-26 | 1995-10-21 | Ushio Electric Inc | |
| US5443863A (en) * | 1994-03-16 | 1995-08-22 | Auburn University | Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge |
-
1996
- 1996-02-14 SE SE9600524A patent/SE9600524D0/sv unknown
- 1996-03-07 US US08/612,484 patent/US5698472A/en not_active Expired - Fee Related
-
1997
- 1997-02-14 WO PCT/SE1997/000231 patent/WO1997030473A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO1997030473A1 (en) | 1997-08-21 |
| US5698472A (en) | 1997-12-16 |
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