KR880000494A - 내식막 조성물 및 이의 용도 - Google Patents

내식막 조성물 및 이의 용도 Download PDF

Info

Publication number
KR880000494A
KR880000494A KR870005909A KR870005909A KR880000494A KR 880000494 A KR880000494 A KR 880000494A KR 870005909 A KR870005909 A KR 870005909A KR 870005909 A KR870005909 A KR 870005909A KR 880000494 A KR880000494 A KR 880000494A
Authority
KR
South Korea
Prior art keywords
bag
solution
resist
weight
onium salt
Prior art date
Application number
KR870005909A
Other languages
English (en)
Other versions
KR950007226B1 (ko
Inventor
빈센트 크리벨로 제임스
조셉 오브리언 미카엘
램 리 줄리아
Original Assignee
아더 엠 킹
제네랄 일렉트릭 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25671759&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR880000494(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 아더 엠 킹, 제네랄 일렉트릭 캄파니 filed Critical 아더 엠 킹
Publication of KR880000494A publication Critical patent/KR880000494A/ko
Application granted granted Critical
Publication of KR950007226B1 publication Critical patent/KR950007226B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음

Description

내식막 조성물 및 이의 용도
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (16)

  1. (A) 유기용매 100중량부 및 (B)(1) 물 또는 평균분자량 200내지 20,000의 수성염기 가용성 유기 중합체 100중량부.(2) 물 또는 수성 염기에 불용성이고 비점이 100℃ 이상이며, (1)에 대한 용해 저해제인 산불안정성 그룹 치환된 단순화합물 5내지 100중량부 및 (3) 아릴오늄염의 유효량을 함유하는 내식막 조성물.
  2. 제1항에 있어서, 유기중합체가 노볼락 수지인 가방성(spinnable) 또는 용액주조성(solution castable)조성물.
  3. 제1항에 있어서, 산불안정성 그룹 치환된 용해 저해제가 단순 화합물의 3급 부틸에스테르인 가방성 또는 용액주조성 조성물.
  4. 제1항에 있어서, 아릴 오늄염이 설포늄염인 가방성 또는 용액주조성 조성물.
  5. 제1항에 있어서, 아릴 오늄염이 요오드늄염인 가방성 또는 용액주조성 조성물.
  6. 제1항에 있어서, 광증감제를 함유하는 가방성 또는 용액주조성 조성물.
  7. 제1항에 있어서, 용해저해제가 아릴 3급부틸 에테르인 가방성 또는 용액주조성 조성물.
  8. 제1항에 있어서, 용해 저해제가 아릴 3급부틸 카보네이트인 가방성 또는 용액주조성 조성물.
  9. 제1항에 있어서, 오늄염이 트리페닐설포늄 헥사플루오로안티모네이트인 가방성 또는 용액 주조성 조성물.
  10. 제1항에 있어서, 오늄염이 디페닐-4-티오페녹시페닐설포늄 헥사플루오로포스페이트인 가방성 또는 용액주조성 조성물.
  11. 제1항에 있어서, 오늄염이 4-메톡시페닐 페닐요오드늄 헥사플루오로포스페이트인 가방성 또는 용액주조성 조성물.
  12. 제1항에 있어서, 오늄염이 4-메톡시페닐 페닐요오드늄 트리플루오로메탄 설포네이트인 가방성 또는 용액주조성 조성물.
  13. (A) 유기용매 100중량부 및 (B)(1) 물 또는 평균분자량 200내지 20,000의 수성염기 가용성 유기중합체 100중량부, (2) 물 또는 수성 염기에 불용성이고 비점이 100℃ 이상이며, (1)에 대한 용해저해제인산 불안정성 그룹 치환된 단순 화합물 5내지 100중량부 및 (3) 아릴 오늄염의 유효량을 함유하는 내식막 조성물로 기재를 처리하여 내식막 기재 복합물을 형성시키고, 내식막 기재 복합물을 약 35℃ 내지 180℃ 범위의 온도로 소성(bavking)시키고, 적용된 내식막을 형상화되는 방법으로 조사하고, 조사된 내식막을 약 35℃ 내지 185℃ 범위의 온도로 가열하고, 조사된 내식막을 현상하여 형상화된 내식막 기재 복합물을 생성시킴을 특징으로 하여 형상화된 내식막 기재 복합물을 제조하는 방법.
  14. 제13항의 방법에 따라 제조된 기재 및 내식막 조성물을 함유하는 복합물.
  15. 제14항에 있어서, 기재가 실리콘 박판인 복합물.
  16. 제14항에 있어서, 기재가 구리피복 적층물인 복합물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870005909A 1986-06-13 1987-06-11 내식막 조성물, 형상화된 내식막 기재 복합물의 제조방법 및 이로부터 제조된 복합물 KR950007226B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US87391486A 1986-06-13 1986-06-13
US873,914 1986-06-13
CA000561112A CA1332119C (en) 1986-06-13 1988-03-10 Resist compositions and use
US873914 2001-06-04

Publications (2)

Publication Number Publication Date
KR880000494A true KR880000494A (ko) 1988-03-26
KR950007226B1 KR950007226B1 (ko) 1995-07-04

Family

ID=25671759

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870005909A KR950007226B1 (ko) 1986-06-13 1987-06-11 내식막 조성물, 형상화된 내식막 기재 복합물의 제조방법 및 이로부터 제조된 복합물

Country Status (5)

Country Link
EP (1) EP0249139B2 (ko)
JP (1) JP2714378B2 (ko)
KR (1) KR950007226B1 (ko)
CA (1) CA1332119C (ko)
DE (1) DE3750275T3 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100589892B1 (ko) * 1998-06-03 2006-06-19 데이진 가부시키가이샤 전방향족 폴리아미드 섬유, 이를 함유하는 시트 및 이 시트의 제조 방법

Families Citing this family (155)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4800152A (en) * 1987-03-16 1989-01-24 International Business Machines Corporation Negative resist compositions
MY103006A (en) * 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
DE3817010A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
DE3817009A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
DE3837513A1 (de) * 1988-11-04 1990-05-10 Basf Ag Strahlungsempfindliches gemisch
JP2571130B2 (ja) * 1989-09-20 1997-01-16 日本ゼオン株式会社 レジスト組成物
US5023164A (en) * 1989-10-23 1991-06-11 International Business Machines Corporation Highly sensitive dry developable deep UV photoresist
JPH03142918A (ja) * 1989-10-30 1991-06-18 Matsushita Electron Corp レジストパターン形成方法
JP2599007B2 (ja) * 1989-11-13 1997-04-09 富士写真フイルム株式会社 ポジ型感光性組成物
US5164278A (en) * 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
JP2676981B2 (ja) * 1990-06-01 1997-11-17 三菱電機株式会社 感光性樹脂組成物
JPH0480758A (ja) * 1990-07-23 1992-03-13 Fuji Photo Film Co Ltd 感光性組成物
JP2557748B2 (ja) * 1990-09-07 1996-11-27 日本電信電話株式会社 ポジ型レジスト材料
JPH04149445A (ja) * 1990-10-12 1992-05-22 Mitsubishi Electric Corp ポジ型感光性組成物
US5085972A (en) * 1990-11-26 1992-02-04 Minnesota Mining And Manufacturing Company Alkoxyalkyl ester solubility inhibitors for phenolic resins
US6340552B1 (en) 1990-12-27 2002-01-22 Kabushiki Kaisha Toshiba Photosensitive composition containing a dissolution inhibitor and an acid releasing compound
JP2919142B2 (ja) * 1990-12-27 1999-07-12 株式会社東芝 感光性組成物およびそれを用いたパターン形成方法
DE4124028A1 (de) * 1991-07-19 1993-01-21 Hoechst Ag Verfahren zur herstellung von n-tert.-butoxycarbonyl-maleimid
DE4124029A1 (de) * 1991-07-19 1993-01-21 Hoechst Ag Verfahren zur herstellung von tert.-butyloxycarbonyl-gruppen tragenden organischen verbindungen
US5348838A (en) * 1991-07-31 1994-09-20 Kabushiki Kaisha Toshiba Photosensitive composition comprising alkali soluble binder and photoacid generator having sulfonyl group
JP2764771B2 (ja) * 1991-10-01 1998-06-11 富士写真フイルム株式会社 感光性組成物
JP2655384B2 (ja) * 1991-11-08 1997-09-17 富士写真フイルム株式会社 ポジ型レジスト組成物
JP2964107B2 (ja) * 1991-11-11 1999-10-18 日本電信電話株式会社 ポジ型レジスト材料
US5342734A (en) * 1992-02-25 1994-08-30 Morton International, Inc. Deep UV sensitive photoresist resistant to latent image decay
JP3010607B2 (ja) * 1992-02-25 2000-02-21 ジェイエスアール株式会社 感放射線性樹脂組成物
US5580695A (en) * 1992-02-25 1996-12-03 Japan Synthetic Rubber Co., Ltd. Chemically amplified resist
JP2688168B2 (ja) * 1992-11-03 1997-12-08 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストイメージ形成プロセス
DE4242051A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag N,N-Disubstituierte Sulfonamide und damit hergestelltes strahlungsempfindliches Gemisch
DE4242050A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag Polymere mit N,N-disubstituierten Sulfonamid-Seitengruppen und deren Verwendung
JP2590702B2 (ja) * 1993-09-21 1997-03-12 日本電気株式会社 半導体装置の製造方法
JP3033443B2 (ja) 1994-06-29 2000-04-17 信越化学工業株式会社 反射防止膜材料
US5824451A (en) * 1994-07-04 1998-10-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
DE4444669A1 (de) 1994-12-15 1996-06-20 Hoechst Ag Strahlungsempfindliches Gemisch
EP0831370A4 (en) * 1995-01-17 1999-08-18 Nippon Zeon Co POSITIVELY WORKING PHOTO PAINT COMPOSITION
JP2820051B2 (ja) * 1995-01-30 1998-11-05 日本電気株式会社 レジスト材料
JPH08262720A (ja) * 1995-03-28 1996-10-11 Hoechst Ind Kk 可塑剤を含む放射線感応性組成物
JP3382081B2 (ja) * 1995-06-01 2003-03-04 株式会社東芝 レジストおよびこれを用いたパターン形成方法
JPH0954437A (ja) 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
JP3591672B2 (ja) 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
WO1997033206A1 (en) * 1996-03-07 1997-09-12 Clariant International, Ltd. Thermal treatment process of positive photoresist composition
JP3198915B2 (ja) * 1996-04-02 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3125678B2 (ja) * 1996-04-08 2001-01-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
TW337591B (en) * 1996-04-15 1998-08-01 Shinetsu Chem Ind Co Anti-reflection coating material
JP3206440B2 (ja) * 1996-06-28 2001-09-10 信越化学工業株式会社 化学増幅ポジ型レジスト材料
TW528932B (en) * 1997-01-24 2003-04-21 Shinetsu Chemical Co Polymers and chemically amplified positive resist compositions
TW530192B (en) * 1997-01-27 2003-05-01 Shinetsu Chemical Co Partially hydrogenated polymer compound and chemically sensitized positive resist material
TW574629B (en) * 1997-02-28 2004-02-01 Shinetsu Chemical Co Polystyrene derivative chemically amplified positive resist compositions, and patterning method
TW480370B (en) 1997-10-08 2002-03-21 Shinetsu Chemical Co Polystyrene-based polymer compound, chemical amplification positive type resist material and pattern formation
TW546543B (en) * 1997-10-08 2003-08-11 Shinetsu Chemical Co Resist material and patterning process
DE69941227D1 (de) 1998-04-06 2009-09-17 Fujifilm Corp Photoempfindliche Harzzusammensetzung
KR100504644B1 (ko) * 1998-10-29 2005-08-04 신에쓰 가가꾸 고교 가부시끼가이샤 포지형 레지스트 재료
US6455223B1 (en) 1999-03-26 2002-09-24 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
US6414101B1 (en) 1999-03-26 2002-07-02 Shin-Etsu Chemical Co., Ltd. Dendritic polymers and making method
US6461789B1 (en) 1999-08-25 2002-10-08 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
US6436606B1 (en) 1999-08-30 2002-08-20 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
JP3998901B2 (ja) * 1999-08-31 2007-10-31 東京応化工業株式会社 感光性基材、それを用いたレジストパターンの形成方法およびポジ型レジスト組成物
US6369279B1 (en) 1999-09-08 2002-04-09 Shin-Etsu Chemical Co., Ltd. Styrene derivatives
TW527363B (en) 1999-09-08 2003-04-11 Shinetsu Chemical Co Polymers, chemical amplification resist compositions and patterning process
JP3969909B2 (ja) 1999-09-27 2007-09-05 富士フイルム株式会社 ポジ型フォトレジスト組成物
US6461791B1 (en) 1999-10-13 2002-10-08 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
US6333436B1 (en) 1999-10-13 2001-12-25 Shin-Etsu Chemical Co., Ltd. Styrene derivatives
JP3755571B2 (ja) 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP3963624B2 (ja) 1999-12-22 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
KR100576201B1 (ko) 2000-01-17 2006-05-03 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭형 레지스트 재료
US6835524B2 (en) 2000-02-16 2004-12-28 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
US6579658B2 (en) 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
US6838224B2 (en) 2000-03-07 2005-01-04 Shi-Etsu Chemical Co., Ltd. Chemical amplification, positive resist compositions
TW538312B (en) 2000-03-07 2003-06-21 Shinetsu Chemical Co Chemical amplification, positive resist compositions
TW538088B (en) 2000-03-09 2003-06-21 Shinetsu Chemical Co Chemical amplification resist compositions
KR100660513B1 (ko) 2000-04-27 2006-12-22 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
TWI226519B (en) 2000-06-02 2005-01-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP3712047B2 (ja) 2000-08-14 2005-11-02 信越化学工業株式会社 レジスト材料及びパターン形成方法
TW565747B (en) 2000-09-07 2003-12-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
TW588221B (en) 2000-09-07 2004-05-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
US6511787B2 (en) 2000-09-07 2003-01-28 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
TW594410B (en) 2000-09-07 2004-06-21 Shinetsu Chemical Co Resist compositions and patterning process
EP1204001B1 (en) 2000-11-01 2013-09-11 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
KR100670090B1 (ko) 2000-11-29 2007-01-17 신에쓰 가가꾸 고교 가부시끼가이샤 아민 화합물, 레지스트 재료 및 패턴 형성 방법
WO2002046507A2 (en) 2000-12-04 2002-06-13 Ciba Specialty Chemicals Holding Inc. Onium salts and the use therof as latent acids
US6743564B2 (en) 2000-12-07 2004-06-01 Shin-Etsu Chemical Co., Ltd. Amine compounds, resist compositions and patterning process
US6835804B2 (en) 2000-12-07 2004-12-28 Shin-Etsu Chemical Co., Ltd. Preparation of polymer, and resist composition using the polymer
JP3962893B2 (ja) 2001-02-09 2007-08-22 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI300790B (en) 2001-02-28 2008-09-11 Shinetsu Chemical Co Polymers, Resist Compositions and Patterning Process
TWI245774B (en) 2001-03-01 2005-12-21 Shinetsu Chemical Co Silicon-containing polymer, resist composition and patterning process
KR100876047B1 (ko) 2001-03-29 2008-12-26 오사까 가스 가부시키가이샤 광활성 화합물 및 감광성 수지 조성물
JP4117112B2 (ja) * 2001-03-30 2008-07-16 富士フイルム株式会社 ポジ型フォトレジスト組成物
TW588032B (en) 2001-04-23 2004-05-21 Shinetsu Chemical Co New tertiary amine compound having ester structure and method for producing the same
TW584786B (en) 2001-06-25 2004-04-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP3891257B2 (ja) 2001-06-25 2007-03-14 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI245043B (en) 2001-06-25 2005-12-11 Shinetsu Chemical Co Novel ester compounds
TW574614B (en) 2001-09-27 2004-02-01 Shinetsu Chemical Co Chemically amplified resist compositions and patterning process
JP3821217B2 (ja) 2001-10-30 2006-09-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3890365B2 (ja) 2001-11-01 2007-03-07 富士フイルム株式会社 ポジ型レジスト組成物
JP4522628B2 (ja) 2001-11-28 2010-08-11 信越化学工業株式会社 新規なエステル化合物
JP3874092B2 (ja) 2001-12-26 2007-01-31 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP3877605B2 (ja) 2002-02-08 2007-02-07 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
TWI285650B (en) 2002-03-25 2007-08-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
TWI264442B (en) 2002-03-25 2006-10-21 Shinetsu Chemical Co Novel esters, polymers, resist compositions and patterning process
TWI304412B (en) 2002-03-26 2008-12-21 Shinetsu Chemical Co Polymers, resist compositions andpatterning process
US6866983B2 (en) * 2002-04-05 2005-03-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP3856122B2 (ja) * 2002-04-05 2006-12-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7232638B2 (en) 2002-05-02 2007-06-19 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US6919161B2 (en) 2002-07-02 2005-07-19 Shin-Etsu Chemical Co., Ltd. Silicon-containing polymer, resist composition and patterning process
JP3912512B2 (ja) 2002-07-02 2007-05-09 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
JP3844069B2 (ja) 2002-07-04 2006-11-08 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3912516B2 (ja) 2002-08-09 2007-05-09 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP3900276B2 (ja) 2002-10-25 2007-04-04 信越化学工業株式会社 レジスト材料及びパターン形成方法
TWI252374B (en) 2003-01-30 2006-04-01 Shinetsu Chemical Co Polymer, resist composition and patterning process
JP4240202B2 (ja) 2003-02-10 2009-03-18 信越化学工業株式会社 スルホン酸エステル基を有する高分子化合物、レジスト材料及びパターン形成方法
JP4068006B2 (ja) 2003-05-07 2008-03-26 信越化学工業株式会社 サーマルフロー工程を用いた微細なコンタクトホール形成方法
JP4081677B2 (ja) 2003-05-21 2008-04-30 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4029288B2 (ja) 2003-05-21 2008-01-09 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4009852B2 (ja) 2003-05-21 2007-11-21 信越化学工業株式会社 塩基性化合物、レジスト材料及びパターン形成方法
JP3981830B2 (ja) 2003-05-26 2007-09-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4114064B2 (ja) 2003-05-27 2008-07-09 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
JP2004354417A (ja) 2003-05-27 2004-12-16 Shin Etsu Chem Co Ltd ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4013063B2 (ja) 2003-08-26 2007-11-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7166418B2 (en) 2003-09-03 2007-01-23 Matsushita Electric Industrial Co., Ltd. Sulfonamide compound, polymer compound, resist material and pattern formation method
US7060775B2 (en) 2003-10-02 2006-06-13 Matsushita Electronic Industrial Co., Ltd. Polymer compound, resist material and pattern formation method
US7169530B2 (en) 2003-10-02 2007-01-30 Matsushita Electric Industrial Co., Ltd. Polymer compound, resist material and pattern formation method
US7232641B2 (en) 2003-10-08 2007-06-19 Shin-Etsu Chemical Co., Ltd. Polymerizable compound, polymer, positive-resist composition, and patterning process using the same
US7189493B2 (en) 2003-10-08 2007-03-13 Shin-Etsu Chemical Co., Ltd. Polymer, positive resist composition, and patterning process using the same
JP4235810B2 (ja) 2003-10-23 2009-03-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI286555B (en) 2003-10-23 2007-09-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP4355917B2 (ja) 2003-10-29 2009-11-04 信越化学工業株式会社 含窒素有機化合物、レジスト材料及びパターン形成方法
US7276324B2 (en) 2003-11-14 2007-10-02 Shin-Etsu Chemical Co., Ltd. Nitrogen-containing organic compound, resist composition and patterning process
JP4525912B2 (ja) 2004-01-30 2010-08-18 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
KR100942627B1 (ko) 2004-04-09 2010-02-17 신에쓰 가가꾸 고교 가부시끼가이샤 포지티브형 레지스트 재료 및 이를 이용한 패턴 형성 방법
KR100864147B1 (ko) 2004-04-09 2008-10-16 신에쓰 가가꾸 고교 가부시끼가이샤 포지티브형 레지스트 재료 및 패턴 형성 방법
JP4557159B2 (ja) 2004-04-15 2010-10-06 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びこれを用いたパターン形成方法
JP4502115B2 (ja) 2004-04-23 2010-07-14 信越化学工業株式会社 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法
JP3978215B2 (ja) 2004-05-25 2007-09-19 松下電器産業株式会社 レジスト材料及びパターン形成方法
JP3978217B2 (ja) 2004-05-27 2007-09-19 松下電器産業株式会社 レジスト材料及びパターン形成方法
JP4431888B2 (ja) 2004-10-28 2010-03-17 信越化学工業株式会社 含フッ素重合性化合物、その製造方法、この化合物から得られる高分子化合物、レジスト材料及びこれを用いたパターン形成方法
JP4506968B2 (ja) 2005-02-04 2010-07-21 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2006225476A (ja) 2005-02-16 2006-08-31 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
JP4687878B2 (ja) 2005-05-27 2011-05-25 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2006328003A (ja) * 2005-05-27 2006-12-07 Shin Etsu Chem Co Ltd 新規な重合性エステル化合物
JP4697443B2 (ja) 2005-09-21 2011-06-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4671035B2 (ja) 2005-10-14 2011-04-13 信越化学工業株式会社 化学増幅型レジスト材料及びパターン形成方法
JP4488230B2 (ja) 2005-10-31 2010-06-23 信越化学工業株式会社 レジスト用重合体、レジスト材料及びパターン形成方法
JP4582331B2 (ja) 2005-11-08 2010-11-17 信越化学工業株式会社 レジスト材料及びパターン形成方法
US8313885B2 (en) 2005-11-10 2012-11-20 Agfa Graphics Nv Lithographic printing plate precursor comprising bi-functional compounds
US7629106B2 (en) 2005-11-16 2009-12-08 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4614089B2 (ja) 2005-11-17 2011-01-19 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法
JP4831307B2 (ja) 2005-12-02 2011-12-07 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料及びパターン形成方法
US7491483B2 (en) 2006-03-06 2009-02-17 Shin-Etsu Chemical Co., Ltd. Polymers, positive resist compositions and patterning process
US7771913B2 (en) 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4784753B2 (ja) 2006-07-06 2011-10-05 信越化学工業株式会社 重合性エステル化合物、重合体、レジスト材料及びパターン形成方法
JP5183903B2 (ja) 2006-10-13 2013-04-17 信越化学工業株式会社 高分子化合物、レジスト材料及びこれを用いたパターン形成方法
JP4784760B2 (ja) 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR20120066924A (ko) 2010-12-15 2012-06-25 제일모직주식회사 오르토-니트로벤질 에스테르 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
US11681220B2 (en) * 2020-03-05 2023-06-20 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
US11675267B2 (en) * 2020-03-23 2023-06-13 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
DE3023201A1 (de) * 1980-06-21 1982-01-07 Hoechst Ag, 6000 Frankfurt Positiv arbeitendes strahlungsempfindliches gemisch
DE3151078A1 (de) * 1981-12-23 1983-07-28 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung von reliefbildern
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0617991B2 (ja) * 1983-06-22 1994-03-09 富士写真フイルム株式会社 光可溶化組成物
GB8333901D0 (en) * 1983-12-20 1984-02-01 Minnesota Mining & Mfg Radiationsensitive compositions
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
JPS6136235A (ja) * 1984-07-26 1986-02-20 Toshiba Corp ヘテロポリ酸塩
US4665006A (en) * 1985-12-09 1987-05-12 International Business Machines Corporation Positive resist system having high resistance to oxygen reactive ion etching
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100589892B1 (ko) * 1998-06-03 2006-06-19 데이진 가부시키가이샤 전방향족 폴리아미드 섬유, 이를 함유하는 시트 및 이 시트의 제조 방법

Also Published As

Publication number Publication date
EP0249139A2 (en) 1987-12-16
DE3750275D1 (de) 1994-09-01
EP0249139A3 (en) 1989-10-25
JP2714378B2 (ja) 1998-02-16
CA1332119C (en) 1994-09-27
JPS6327829A (ja) 1988-02-05
DE3750275T2 (de) 1995-03-09
KR950007226B1 (ko) 1995-07-04
EP0249139B1 (en) 1994-07-27
EP0249139B2 (en) 1998-03-11
DE3750275T3 (de) 1998-10-01

Similar Documents

Publication Publication Date Title
KR880000494A (ko) 내식막 조성물 및 이의 용도
JP4244755B2 (ja) 感放射線性樹脂組成物
US5374500A (en) Positive photoresist composition containing photoacid generator and use thereof
EP0660187B1 (en) Radiation-sensitive resin composition
EP0959389B1 (en) Diazodisulfone compound and radiation-sensitive resin composition
KR960702119A (ko) 부분적으로 중합된 수지(Partially polymerized resins)
KR960001895A (ko) 화학증폭 포지형 레지스트 조성물
KR900018736A (ko) 감광성혼합물 및 양각패턴의 생성방법
KR960008428A (ko) 화학적으로 증폭된 방사선-민감성 조성물
KR900700923A (ko) 포토레지스트 조성물
EP2020616A2 (en) Resist composition for electron beam, x-ray, or euv, and pattern-forming method using the same
KR970028825A (ko) 신규 술포늄염 및 화학 증폭 포지형 레지스트 재료
KR930004809A (ko) 네거티브 감광성 조성물 및 이를 이용한 레지스트 패턴의 형성방법
BE1010516A4 (fr) Composition photosensible travaillant en positif.
KR20090014116A (ko) 신규의 술포늄 화합물을 함유하는 레지스트 조성물, 그레지스트 조성물을 사용한 패턴 형성 방법, 및 신규의술포늄 화합물
EP0950515A3 (en) Heat-hardenable composition and planographic form plate using the composition
KR970012008A (ko) 알카리 현상을 위한 레지스트
KR970028826A (ko) 신규 술포늄염 및 화학 증폭 포지형 레지스트 재료
KR950032084A (ko) 신규술포늄염 및 화학증폭 포지형 레지스트 조성물
JP2001013687A (ja) 感放射線性樹脂組成物
US20020068236A1 (en) Positive photosensitive resin composition, positive photosensitive dry film and method of forming pattern
DE69029104T2 (de) Polysiloxane und positiv arbeitende Resistmasse
CN110231754A (zh) 一种杂环多官光致产酸剂及其制备方法和制得的化学增幅型光刻胶
JP4951464B2 (ja) ポジ型レジスト組成物及びこれを用いたパターン形成方法。
KR900002125A (ko) 내식막 조성물

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060626

Year of fee payment: 12

EXPY Expiration of term