KR870010553A - 반도체 불휘발성 메모리장치 - Google Patents
반도체 불휘발성 메모리장치 Download PDFInfo
- Publication number
- KR870010553A KR870010553A KR870004166A KR870004166A KR870010553A KR 870010553 A KR870010553 A KR 870010553A KR 870004166 A KR870004166 A KR 870004166A KR 870004166 A KR870004166 A KR 870004166A KR 870010553 A KR870010553 A KR 870010553A
- Authority
- KR
- South Korea
- Prior art keywords
- memory cell
- nonvolatile
- volatile
- random access
- power supply
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/141—Battery and back-up supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 바람직한 실시예에 따른 반도체 불휘발성 메모리장치의 기본구조의 블록도.
제2도는 제1도의 장치의 상세한 배치도.
제3도는 제1도의 장치에 있어 NVRAM 셀 EEPRO 구조의 회로도.
Claims (2)
- 휘발성 메모리셀과 휘발성 소거가능하고 프로그램 가능한 판독전용 메모리셀로 구성되는 다수의 불휘발성 랜덤 엑세스 메모리셀;전원의 전위레벨을 검지하여 검지된 레벨에 따라 기억동작 또는 재호출동작을 선택하기 위한 센스회로수단; 및 전원전압용 제1단자 수단과 보조전원 전압용 제2단자 수단으로 구성되어,상기 제1단자 수단에서 전위의 상승 또는 하강의 검출이 상기 센스회로 수단에서 수행되어 상기 전위검출의 결과에 따라 휘발성 랜덤 억세스 메모리셀에서 불휘발성 소거 가능하고 프로그램 가능한 판독전용 메모리셀로 또는 불휘발성 소거가능하고 프로그램 가능한 판독전용 메모리셀에서 휘발성 랜덤 억세스 메모리셀로 데이터 전송이 자동적으로 수행되는 것을 특징으로 하는 반도체 불휘발성 메모리 장치.
- 제1항에 있어서, 상기 포지티브측 VCC전압 센스회로는 한쌍의 공핍형 MOS트렌지스터 및 버터로 각각 구성되는 것을 특징으로 하는 반도체 불휘발성 메모리 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61097985A JPS62256296A (ja) | 1986-04-30 | 1986-04-30 | 半導体不揮発性記憶装置 |
JP61-97985 | 1986-04-30 | ||
JP97985 | 1986-04-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870010553A true KR870010553A (ko) | 1987-11-30 |
KR910001531B1 KR910001531B1 (ko) | 1991-03-15 |
Family
ID=14206956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870004166A KR910001531B1 (ko) | 1986-04-30 | 1987-04-29 | 반도체 불휘발성 메모리장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4800533A (ko) |
EP (1) | EP0247739B1 (ko) |
JP (1) | JPS62256296A (ko) |
KR (1) | KR910001531B1 (ko) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5189641A (en) * | 1987-06-08 | 1993-02-23 | Fujitsu Limited | Non-volatile random access memory device |
JPS6414798A (en) * | 1987-07-09 | 1989-01-18 | Fujitsu Ltd | Non-volatile memory device |
US5245582A (en) * | 1987-10-27 | 1993-09-14 | Mitsubishi Denki Kabushiki Kaisha | Memory card circuit with power-down control of access buffer |
US5212664A (en) * | 1989-04-05 | 1993-05-18 | Mitsubishi Denki Kabushiki Kaisha | Information card with dual power detection signals to memory decoder |
US5197026A (en) * | 1989-04-13 | 1993-03-23 | Microchip Technology Incorporated | Transparent EEPROM backup of DRAM memories |
KR0149503B1 (ko) * | 1989-04-20 | 1999-05-15 | 야마우찌 히로시 | 메모리 카트리지 |
JP2614514B2 (ja) * | 1989-05-19 | 1997-05-28 | 三菱電機株式会社 | ダイナミック・ランダム・アクセス・メモリ |
JPH03217051A (ja) * | 1990-01-23 | 1991-09-24 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
US5625593A (en) * | 1990-03-28 | 1997-04-29 | Mitsubishi Denki Kabushiki Kaisha | Memory card circuit with separate buffer chips |
US5414671A (en) * | 1990-05-01 | 1995-05-09 | Sharp Kabushimi Kaisha | Semiconductor memory device having operation control means with data judging function |
US5345422A (en) * | 1990-07-31 | 1994-09-06 | Texas Instruments Incorporated | Power up detection circuit |
JP3256996B2 (ja) * | 1991-10-31 | 2002-02-18 | ソニー株式会社 | 留守番機能付電話装置 |
JP3210068B2 (ja) * | 1992-04-16 | 2001-09-17 | キヤノン株式会社 | 記録装置 |
JPH06195258A (ja) * | 1992-07-08 | 1994-07-15 | Nec Corp | 半導体記憶装置 |
JPH06119510A (ja) * | 1992-10-07 | 1994-04-28 | Mitsubishi Electric Corp | メモリカード |
US5343437A (en) * | 1993-02-19 | 1994-08-30 | Motorola Inc. | Memory having nonvolatile and volatile memory banks |
US5488579A (en) * | 1994-04-29 | 1996-01-30 | Motorola Inc. | Three-dimensionally integrated nonvolatile SRAM cell and process |
US5519663A (en) * | 1994-09-28 | 1996-05-21 | Sci Systems, Inc. | Preservation system for volatile memory with nonvolatile backup memory |
KR0140124B1 (ko) * | 1995-07-14 | 1998-07-15 | 김광호 | 반도체 메모리 장치의 전원 전압 검출회로 |
US5661677A (en) | 1996-05-15 | 1997-08-26 | Micron Electronics, Inc. | Circuit and method for on-board programming of PRD Serial EEPROMS |
US5815455A (en) * | 1997-09-19 | 1998-09-29 | International Business Machines Corporation | Power supply interface circuit providing nonvolatile storage with suitable operating and standby voltage levels |
US5726629A (en) * | 1997-02-07 | 1998-03-10 | Yu; Raymond Y. | Lighting fixture with motion detector and announcement device |
US5880991A (en) * | 1997-04-14 | 1999-03-09 | International Business Machines Corporation | Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure |
DE69816032D1 (de) * | 1998-04-30 | 2003-08-07 | St Microelectronics Srl | Verfahren zur Sicherung von Daten im Falle unerwünschter Unterbrechnungen während ein Programmzyklus eines nichtflüchtigen Speichers, und ein nichtflüchtiger Speicher |
US6556487B1 (en) | 2000-09-20 | 2003-04-29 | Cypress Semiconductor Corp. | Non-volatile static memory cell |
US6469930B1 (en) | 2000-10-30 | 2002-10-22 | Cypress Semiconductor Corporation | Compact nonvolatile circuit having margin testing capability |
JP2003233990A (ja) | 2002-02-08 | 2003-08-22 | Sony Corp | 複合記憶回路構造及び同複合記憶回路構造を有する半導体装置 |
US20050036387A1 (en) * | 2002-04-24 | 2005-02-17 | Seal Brian K. | Method of using flash memory for storing metering data |
JP4133166B2 (ja) * | 2002-09-25 | 2008-08-13 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
US7177782B2 (en) * | 2004-06-18 | 2007-02-13 | Lenovo (Singapore) Pte. Ltd. | Methods and arrangements for capturing runtime information |
DE102005000809B4 (de) * | 2005-01-05 | 2012-09-13 | Qimonda Ag | Integrierter Halbleiterspeicher mit nichtflüchtiger Speicherung von Daten |
US8072834B2 (en) * | 2005-08-25 | 2011-12-06 | Cypress Semiconductor Corporation | Line driver circuit and method with standby mode of operation |
US7821859B1 (en) | 2006-10-24 | 2010-10-26 | Cypress Semiconductor Corporation | Adaptive current sense amplifier with direct array access capability |
US8036032B2 (en) | 2007-12-31 | 2011-10-11 | Cypress Semiconductor Corporation | 5T high density NVDRAM cell |
US8064255B2 (en) * | 2007-12-31 | 2011-11-22 | Cypress Semiconductor Corporation | Architecture of a nvDRAM array and its sense regime |
US8059458B2 (en) * | 2007-12-31 | 2011-11-15 | Cypress Semiconductor Corporation | 3T high density nvDRAM cell |
US8195901B2 (en) | 2009-02-05 | 2012-06-05 | International Business Machines Corporation | Firehose dump of SRAM write cache data to non-volatile memory using a supercap |
US9779814B2 (en) * | 2011-08-09 | 2017-10-03 | Flashsilicon Incorporation | Non-volatile static random access memory devices and methods of operations |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5699A (en) * | 1979-06-14 | 1981-01-06 | Mitsubishi Electric Corp | Semiconductor memory unit |
US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
US4420821A (en) * | 1982-02-19 | 1983-12-13 | International Business Machines Corporation | Static RAM with non-volatile back-up storage and method of operation thereof |
JPS6014362A (ja) * | 1983-07-04 | 1985-01-24 | Toshiba Corp | 半導体メモリ |
IT1215224B (it) * | 1983-08-04 | 1990-01-31 | Ates Componenti Elettron | Microcalcolatore a struttura integrata munito di memoria ram non volatile. |
JPS60185296A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS6083374A (ja) * | 1983-10-14 | 1985-05-11 | Fujitsu Ltd | 半導体記憶装置 |
JPS60185295A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS60185294A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS60185299A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS60185298A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS60185297A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS61113189A (ja) * | 1984-10-12 | 1986-05-31 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS61117794A (ja) * | 1984-11-13 | 1986-06-05 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
JPS61246995A (ja) * | 1985-04-24 | 1986-11-04 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
-
1986
- 1986-04-30 JP JP61097985A patent/JPS62256296A/ja active Pending
-
1987
- 1987-04-29 KR KR1019870004166A patent/KR910001531B1/ko not_active IP Right Cessation
- 1987-04-29 US US07/043,791 patent/US4800533A/en not_active Expired - Fee Related
- 1987-04-30 EP EP87303875A patent/EP0247739B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR910001531B1 (ko) | 1991-03-15 |
JPS62256296A (ja) | 1987-11-07 |
EP0247739A3 (en) | 1989-06-07 |
US4800533A (en) | 1989-01-24 |
EP0247739A2 (en) | 1987-12-02 |
EP0247739B1 (en) | 1993-12-29 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |