KR850005158A - 반도체 집적회로 장치 - Google Patents
반도체 집적회로 장치 Download PDFInfo
- Publication number
- KR850005158A KR850005158A KR1019840007835A KR840007835A KR850005158A KR 850005158 A KR850005158 A KR 850005158A KR 1019840007835 A KR1019840007835 A KR 1019840007835A KR 840007835 A KR840007835 A KR 840007835A KR 850005158 A KR850005158 A KR 850005158A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- circuit device
- semiconductor integrated
- signal line
- wiring board
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000004020 conductor Substances 0.000 claims 13
- 230000005540 biological transmission Effects 0.000 claims 5
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
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- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 첫번째 예의 개선된 초고속 반도체 IC의 도식적인 횡단면도.
제5도A는 제4도에 대한 배선판의 개선된 구조의 도식적인 횡단면도.
제6도A는 제4도에 대한 배선판의 개선된 다른 구조의 도식적인 횡단면도.
제9도는 본 발명의 두번째 예의 개선된 초고속 반도체 IC의 도식적인 횡단면도.
Claims (7)
- 출력단자를 갖는 반도체 칩으로서 패키이지 안에 장탁되었으며, 상기 패키이지 위에 외부 도선이 위치하고 상기 반도체 칩과 상기 외부도선 사이를 상호 연결한 배선판과 상기 배선판이 졀연판 위에 제조된 전송선로를 포함하고 상기 전송선로가 간격을 갖는 접지도체판과 신호선로 도체의 배열에 의하여 예정된 전손특성을 가지며, 상기 신호선로 도체는 상기 반도체 칩과 상기 외부 도선 사이를 상호연결시키는 반도체 직접회로장치.
- 청구범위 제1항에 있어서 상기 전송선로는 신호선로 도체와 상기 절연판의 공통 표면위에 형성된 접지 도체를 포함하는 공면(Coplanar) 가이드의 형태 안에 있는 반도체 직접회로 장치.
- 청구범위 제1항에 있어서, 상기 전송선로가 상기 절연판의 저면에 형성된 신호선로 도체와 상기 절연판의 윗면에 형성된 접지 도체를 포함하는 스트립 선의 형태안에 있는 반도체 직집회로 장치.
- 청구범위 제3항에 있어서 상기 전송선로가 절연판 위에 장착된 임피이던스 결합 저항을 갖는 반도체 직접회로 장치.
- 청구범위 제3항에 있어서 상기 전송선로는 절연판 위에 놓여진 파동발생회로를 가지며, 상기 신호선로도체와 결합되는 반도체 직접회로장치.
- 청구범위 제1항에 있어서 상기 배선판은 다층으로 된 배선판을 포함하는 반도체 직접회로장치.
- 청구범위 제6항에 있어서 상기 다층배선판은 복수의 절연판과 신호선로도체의 복수의 레벨을 갖되 상기 신호선로도체는 각각의 절연판에 형성된 관통구멍과 서로 상호 연결되어 있으며, 상기 절연판은 서로 적층되어 있는 반도체 직접회로장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58-243410 | 1983-12-23 | ||
JP???58-243410 | 1983-12-23 | ||
JP58243410A JPS60136232A (ja) | 1983-12-23 | 1983-12-23 | 半導体集積回路装置 |
JP58249336A JPS60140727A (ja) | 1983-12-27 | 1983-12-27 | 半導体集積回路装置 |
JP58-249336 | 1983-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850005158A true KR850005158A (ko) | 1985-08-21 |
KR900001273B1 KR900001273B1 (ko) | 1990-03-05 |
Family
ID=26536242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840007835A KR900001273B1 (ko) | 1983-12-23 | 1984-12-11 | 반도체 집적회로 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4751482A (ko) |
EP (1) | EP0148083B1 (ko) |
KR (1) | KR900001273B1 (ko) |
DE (1) | DE3482353D1 (ko) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1238959A (en) * | 1984-08-09 | 1988-07-05 | Robert R. Rohloff | Area-bonding tape |
US5917707A (en) | 1993-11-16 | 1999-06-29 | Formfactor, Inc. | Flexible contact structure with an electrically conductive shell |
IL80683A0 (en) * | 1985-12-20 | 1987-02-27 | Hughes Aircraft Co | Chip interface mesa |
FR2596607A1 (fr) * | 1986-03-28 | 1987-10-02 | Bull Sa | Procede de montage d'un circuit integre sur une carte de circuits imprimes, boitier de circuit integre en resultant et ruban porteur de circuits integres pour la mise en oeuvre du procede |
US4866507A (en) * | 1986-05-19 | 1989-09-12 | International Business Machines Corporation | Module for packaging semiconductor integrated circuit chips on a base substrate |
US4791473A (en) * | 1986-12-17 | 1988-12-13 | Fairchild Semiconductor Corporation | Plastic package for high frequency semiconductor devices |
JPS63258046A (ja) * | 1987-04-15 | 1988-10-25 | Toshiba Corp | 半導体集積回路装置 |
US5162896A (en) * | 1987-06-02 | 1992-11-10 | Kabushiki Kaisha Toshiba | IC package for high-speed semiconductor integrated circuit device |
US5334962A (en) * | 1987-09-18 | 1994-08-02 | Q-Dot Inc. | High-speed data supply pathway systems |
JP2507476B2 (ja) * | 1987-09-28 | 1996-06-12 | 株式会社東芝 | 半導体集積回路装置 |
JP2601867B2 (ja) * | 1988-03-31 | 1997-04-16 | 株式会社東芝 | 半導体集積回路実装基板、その製造方法および半導体集積回路装置 |
EP0344702B1 (en) * | 1988-05-30 | 1996-03-13 | Canon Kabushiki Kaisha | Electric circuit apparatus |
US5162822A (en) * | 1988-10-31 | 1992-11-10 | Hitachi, Ltd. | Saw filter chip mounted on a substrate with shielded conductors on opposite surfaces |
US5136271A (en) * | 1989-01-09 | 1992-08-04 | Mitsubishi Denki Kabushiki Kaisha | Microwave integrated circuit mountings |
US5135890A (en) * | 1989-06-16 | 1992-08-04 | General Electric Company | Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip |
US5103290A (en) * | 1989-06-16 | 1992-04-07 | General Electric Company | Hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip |
US5006820A (en) * | 1989-07-03 | 1991-04-09 | Motorola, Inc. | Low reflection input configuration for integrated circuit packages |
US5166773A (en) * | 1989-07-03 | 1992-11-24 | General Electric Company | Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid |
US5209390A (en) * | 1989-07-03 | 1993-05-11 | General Electric Company | Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid |
GB8918482D0 (en) * | 1989-08-14 | 1989-09-20 | Inmos Ltd | Packaging semiconductor chips |
US5182632A (en) * | 1989-11-22 | 1993-01-26 | Tactical Fabs, Inc. | High density multichip package with interconnect structure and heatsink |
WO1991007777A1 (en) * | 1989-11-22 | 1991-05-30 | Tactical Fabs, Inc. | High density multichip package |
US5258330A (en) * | 1990-09-24 | 1993-11-02 | Tessera, Inc. | Semiconductor chip assemblies with fan-in leads |
US5679977A (en) * | 1990-09-24 | 1997-10-21 | Tessera, Inc. | Semiconductor chip assemblies, methods of making same and components for same |
US7198969B1 (en) * | 1990-09-24 | 2007-04-03 | Tessera, Inc. | Semiconductor chip assemblies, methods of making same and components for same |
US5148266A (en) * | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies having interposer and flexible lead |
US20010030370A1 (en) * | 1990-09-24 | 2001-10-18 | Khandros Igor Y. | Microelectronic assembly having encapsulated wire bonding leads |
US5148265A (en) * | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
US5138436A (en) * | 1990-11-16 | 1992-08-11 | Ball Corporation | Interconnect package having means for waveguide transmission of rf signals |
JP3011510B2 (ja) * | 1990-12-20 | 2000-02-21 | 株式会社東芝 | 相互連結回路基板を有する半導体装置およびその製造方法 |
US5107328A (en) * | 1991-02-13 | 1992-04-21 | Micron Technology, Inc. | Packaging means for a semiconductor die having particular shelf structure |
US5155067A (en) * | 1991-03-26 | 1992-10-13 | Micron Technology, Inc. | Packaging for a semiconductor die |
US5311058A (en) * | 1991-11-29 | 1994-05-10 | Trw Inc. | Integrated circuit power distribution system |
EP0547807A3 (en) * | 1991-12-16 | 1993-09-22 | General Electric Company | Packaged electronic system |
JP2936855B2 (ja) * | 1991-12-26 | 1999-08-23 | 富士電機株式会社 | 電力用半導体装置 |
DE4223371A1 (de) * | 1992-07-16 | 1994-01-20 | Thomson Brandt Gmbh | Verfahren und Platine zur Montage von Bauelementen |
JP3267409B2 (ja) * | 1992-11-24 | 2002-03-18 | 株式会社日立製作所 | 半導体集積回路装置 |
JPH08504541A (ja) * | 1992-12-15 | 1996-05-14 | イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー | 電気的相互接続構造 |
JPH06268020A (ja) * | 1993-03-10 | 1994-09-22 | Sumitomo Electric Ind Ltd | 半導体装置 |
US5338970A (en) * | 1993-03-24 | 1994-08-16 | Intergraph Corporation | Multi-layered integrated circuit package with improved high frequency performance |
US5820014A (en) | 1993-11-16 | 1998-10-13 | Form Factor, Inc. | Solder preforms |
US5566448A (en) * | 1995-06-06 | 1996-10-22 | International Business Machines Corporation | Method of construction for multi-tiered cavities used in laminate carriers |
US5777379A (en) * | 1995-08-18 | 1998-07-07 | Tessera, Inc. | Semiconductor assemblies with reinforced peripheral regions |
US5994152A (en) | 1996-02-21 | 1999-11-30 | Formfactor, Inc. | Fabricating interconnects and tips using sacrificial substrates |
US8033838B2 (en) | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
KR100186329B1 (ko) * | 1996-06-14 | 1999-03-20 | 문정환 | 고체 촬상 소자용 반도체 패키지 |
US5757041A (en) * | 1996-09-11 | 1998-05-26 | Northrop Grumman Corporation | Adaptable MMIC array |
US5937276A (en) * | 1996-12-13 | 1999-08-10 | Tessera, Inc. | Bonding lead structure with enhanced encapsulation |
DE19734032C1 (de) * | 1997-08-06 | 1998-12-17 | Siemens Ag | Elektronisches Steuergerät mit Kontaktstift sowie Herstellungsverfahren |
US6008533A (en) * | 1997-12-08 | 1999-12-28 | Micron Technology, Inc. | Controlling impedances of an integrated circuit |
JP2000031274A (ja) * | 1998-07-14 | 2000-01-28 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US6181004B1 (en) * | 1999-01-22 | 2001-01-30 | Jerry D. Koontz | Digital signal processing assembly and test method |
DE19907949C2 (de) * | 1999-02-24 | 2002-11-07 | Siemens Ag | Steuergerät für ein Kraftfahrzeug |
SE514426C2 (sv) * | 1999-06-17 | 2001-02-19 | Ericsson Telefon Ab L M | Anordning för chipmontering i kavitet i flerlagers mönsterkort |
AU2001227912A1 (en) * | 2000-01-13 | 2001-07-24 | Alpha Industries, Inc. | Microwave ic package with dual mode wave guide |
US6388886B1 (en) * | 2000-05-08 | 2002-05-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory module and module system |
US6608390B2 (en) | 2001-11-13 | 2003-08-19 | Kulicke & Soffa Investments, Inc. | Wirebonded semiconductor package structure and method of manufacture |
US6803252B2 (en) | 2001-11-21 | 2004-10-12 | Sierra Monolithics, Inc. | Single and multiple layer packaging of high-speed/high-density ICs |
US20030095014A1 (en) * | 2001-11-21 | 2003-05-22 | Lao Binneg Y. | Connection package for high-speed integrated circuit |
JP2003258178A (ja) * | 2002-02-27 | 2003-09-12 | Sanyo Electric Co Ltd | 半導体装置 |
JP2003258179A (ja) * | 2002-02-28 | 2003-09-12 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
US20040105244A1 (en) * | 2002-08-06 | 2004-06-03 | Ilyas Mohammed | Lead assemblies with offset portions and microelectronic assemblies with leads having offset portions |
CN1315186C (zh) * | 2004-05-01 | 2007-05-09 | 江苏长电科技股份有限公司 | 微型倒装晶体管的制造方法 |
US10390455B2 (en) * | 2017-03-27 | 2019-08-20 | Raytheon Company | Thermal isolation of cryo-cooled components from circuit boards or other structures |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL275288A (ko) * | 1961-02-28 | |||
DE1244257B (de) * | 1961-05-25 | 1967-07-13 | Emi Ltd | Schaltungsanordnung zur rueckwirkungsfreien Verkopplung zweier Spannungen zu einer Summenspannung mit drei einem geerdeten gemeinsamen Leiter gegenueberliegenden Bandleitern |
US3218584A (en) * | 1964-01-02 | 1965-11-16 | Sanders Associates Inc | Strip line connection |
US3303439A (en) * | 1965-06-14 | 1967-02-07 | Western Electric Co | Strip transmission line interboard connection |
US3614832A (en) * | 1966-03-09 | 1971-10-26 | Ibm | Decal connectors and methods of forming decal connections to solid state devices |
FR1534329A (fr) * | 1966-08-16 | 1968-07-26 | Signetics Corp | Procédé de montage de circuits intégrés |
US3417294A (en) * | 1966-12-19 | 1968-12-17 | Emc Technology Inc | Mounting circuit elements in printed circuit boards |
JPS4947713B1 (ko) * | 1970-04-27 | 1974-12-17 | ||
DE2346924A1 (de) * | 1973-09-18 | 1975-03-27 | Siemens Ag | Abschlusswiderstand fuer eine microstripleitung |
US3895435A (en) * | 1974-01-23 | 1975-07-22 | Raytheon Co | Method for electrically interconnecting multilevel stripline circuitry |
US3886505A (en) * | 1974-04-29 | 1975-05-27 | Rca Corp | Semiconductor package having means to tune out output capacitance |
US3959874A (en) * | 1974-12-20 | 1976-06-01 | Western Electric Company, Inc. | Method of forming an integrated circuit assembly |
US3984620A (en) * | 1975-06-04 | 1976-10-05 | Raytheon Company | Integrated circuit chip test and assembly package |
JPS54131851A (en) * | 1978-04-04 | 1979-10-13 | Mitsubishi Electric Corp | Multi-layer transmission line assembly |
DE2838317C2 (de) * | 1978-09-01 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Richtungskoppler |
US4276558A (en) * | 1979-06-15 | 1981-06-30 | Ford Aerospace & Communications Corp. | Hermetically sealed active microwave integrated circuit |
SE426894B (sv) * | 1981-06-30 | 1983-02-14 | Ericsson Telefon Ab L M | Impedansriktig koaxialovergang for mikrovagssignaler |
EP0070104A3 (en) * | 1981-07-10 | 1985-05-15 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Circuit matching elements |
FR2529385B1 (fr) * | 1982-06-29 | 1985-12-13 | Thomson Csf | Microboitier d'encapsulation de circuits integres logiques fonctionnant en tres haute frequence |
JPS5931042A (ja) * | 1982-08-12 | 1984-02-18 | Mitsubishi Electric Corp | 高周波高出力半導体装置 |
US4551746A (en) * | 1982-10-05 | 1985-11-05 | Mayo Foundation | Leadless chip carrier apparatus providing an improved transmission line environment and improved heat dissipation |
FR2535110B1 (fr) * | 1982-10-20 | 1986-07-25 | Radiotechnique Compelec | Procede d'encapsulation d'un composant semi-conducteur dans un circuit electronique realise sur substrat et application aux circuits integres rapides |
US4538170A (en) * | 1983-01-03 | 1985-08-27 | General Electric Company | Power chip package |
US4593243A (en) * | 1984-08-29 | 1986-06-03 | Magnavox Government And Industrial Electronics Company | Coplanar and stripline probe card apparatus |
-
1984
- 1984-12-11 KR KR1019840007835A patent/KR900001273B1/ko not_active IP Right Cessation
- 1984-12-21 EP EP84402696A patent/EP0148083B1/en not_active Expired - Lifetime
- 1984-12-21 DE DE8484402696T patent/DE3482353D1/de not_active Expired - Lifetime
-
1986
- 1986-10-20 US US06/920,938 patent/US4751482A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR900001273B1 (ko) | 1990-03-05 |
EP0148083A2 (en) | 1985-07-10 |
DE3482353D1 (de) | 1990-06-28 |
US4751482A (en) | 1988-06-14 |
EP0148083B1 (en) | 1990-05-23 |
EP0148083A3 (en) | 1986-10-08 |
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