KR840009174A - 석판화 공정을 이용한 반도체 장치 제조방법 - Google Patents

석판화 공정을 이용한 반도체 장치 제조방법 Download PDF

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KR840009174A
KR840009174A KR1019840002453A KR840002453A KR840009174A KR 840009174 A KR840009174 A KR 840009174A KR 1019840002453 A KR1019840002453 A KR 1019840002453A KR 840002453 A KR840002453 A KR 840002453A KR 840009174 A KR840009174 A KR 840009174A
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coating material
semiconductor device
manufacturing
fluorescence
spray coating
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KR1019840002453A
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KR930000900B1 (ko
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카찌르 아브라함
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오레그 이. 엘버
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication of KR840009174A publication Critical patent/KR840009174A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
    • G01N2021/3166—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths using separate detectors and filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/122—Kinetic analysis; determining reaction rate
    • G01N2201/1222—Endpoint determination; reaction time determination

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

내용 없음

Description

석판화 공정을 이용한 반도체 장치 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 실행에 유용한 광학 시스템의 개략선도.
제4도 및 제5(a)-5(c)도는 실시예 1-4에서 기술된 포로 레지스트막의 에칭동안 검출된 형광강도 신호의 기록을 도시.

Claims (12)

  1. 기판상에 두매 코팅물질을 증착하고, 상기 코팅물질중 최소한 일부분이라도 에칭하는 단계를 구비한 장치를 제조하는 방법에 있어서,
    상기 코팅물질에 형광불질이 포함되고, 형광을 발하도록 부내에서 형광물질을 유도하는 에너지형태로 상기 일부분의 적어도 일부를 종속시킴으로써 상기 투매코팅물질의 에칭을 검사하고, 생겨난 형광을 감지하는 단계를 구비하는 것을 특징으로 하는 석판화 공정을 이용한 반도체장치 제조방법.
  2. 제1항에 따른 방법에 있어서,
    상기 투매코팅물질은 상기 기판에 증착된 제1층의 물질과상기 제1층상에 증착된 제2층의 물질을 포함하는 것을 특징으로 하는 석판화 공정을 이용한 반도체장치 제조방법.
  3. 제2항에 따른 방법에 있어서,
    상기 투매코팅물질은 또한 상기 제2층에 증착된 제3층의 물질을 포함하는 것을 특징으로 하는 석판화공정을 이용한 반도체 장치 제조방법.
  4. 제2항이나 제3항에 따른 방법에 있어서,
    상기 제1층의 물질을 상기 형광물질을 포함하는 것을 특징으로 하는 석판화공정을 이용한 반도체 장치 제조방법.
  5. 제1항에 따른 방법에 있어서,
    감지된 형광이 실제로 단절될 때 상기 에칭은 중단되는 것을 특징으로 하는 석판화 공정을 이용한 반도체장치 제조방법.
  6. 제4항에 따른 방법에 있어서,
    감지된 형광이 실제로 감소되는 것이 제일 먼저 관찰될 때 상기 에칭은 중단되는 것을 특징으로 하는 석판화 공정을 이용한 반도체 장치 제조방법.
  7. 제5항에 따른 방법에 있어서,
    상기 형광의 단절이 검출된 시간은 약 10nm보다 적거나 약 1nm보다 적은 상기 투매코팅물질의 등가 두께에 의해 상기 투매코팅물질의 실제 에팅과는 다른것을 특징으로 하는 석판화 공정을 이용한 반도체 장치 제조방법.
  8. 제1항에 따른 방법에 있어서,
    상기 투매코팅물질에서 상기 형광물질의 농도는 약 0.001% 보다 큰 것을 특징으로 하는 석판화공정을 이용한 반도체장치 제조방법.
  9. 제1항에 따른 방법에 있어서,
    상기 투매코팅물질에서 상기 형광물질의 양자효율은 약 0.01% 보다 큰것을 특징으로하는 석판화공정을 이용한 반도체장치 제조방법.
  10. 제1항에 따른 방법에 있어서,
    상기 코팅물질은 입사형광유도 에너지의 약 0.01% 보다는 많지만 약 50% 보다는 적게 흡수되는 것을 특징으로 하는 석판화공정을 이용한 반도체장치 제조방법.
  11. 제1항에 따른 방법에 있어서,
    상기 형광물질은 4-다이시노메틸렌-2-메틸-6-P-다이에틸아미노스틸릴-4H-피턴을 포함하는 것을 특징으로 하는 석판화공정을 이용한 반도체장지 제조방법.
  12. 선행된 항중 어느 한 항에 따라서,
    생성물은 상기 공정에 의해서 만들어지는 것을 특징으로 하는 석판화 공정을 이용한 반도체장치 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840002453A 1983-05-06 1984-05-04 리소그래픽 프로세스를 이용한 디바이스 제조방법 KR930000900B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US429,433 1983-05-06
US06/492,433 US4482424A (en) 1983-05-06 1983-05-06 Method for monitoring etching of resists by monitoring the flouresence of the unetched material
US492433 1983-05-06

Publications (2)

Publication Number Publication Date
KR840009174A true KR840009174A (ko) 1984-12-24
KR930000900B1 KR930000900B1 (ko) 1993-02-11

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KR1019840002453A KR930000900B1 (ko) 1983-05-06 1984-05-04 리소그래픽 프로세스를 이용한 디바이스 제조방법

Country Status (9)

Country Link
US (1) US4482424A (ko)
JP (1) JPS59208724A (ko)
KR (1) KR930000900B1 (ko)
CA (1) CA1209723A (ko)
DE (1) DE3416819A1 (ko)
FR (1) FR2545622B1 (ko)
GB (1) GB2139151B (ko)
HK (1) HK53287A (ko)
NL (1) NL189631C (ko)

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Also Published As

Publication number Publication date
GB8411122D0 (en) 1984-06-06
DE3416819C2 (ko) 1991-02-14
CA1209723A (en) 1986-08-12
KR930000900B1 (ko) 1993-02-11
JPS59208724A (ja) 1984-11-27
FR2545622B1 (fr) 1987-04-17
NL189631C (nl) 1993-06-01
FR2545622A1 (fr) 1984-11-09
US4482424A (en) 1984-11-13
NL8401430A (nl) 1984-12-03
DE3416819A1 (de) 1984-11-08
GB2139151A (en) 1984-11-07
HK53287A (en) 1987-07-24
NL189631B (nl) 1993-01-04
GB2139151B (en) 1986-07-30

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