JPS57138634A - X-ray sensitive resin and formation of ultrathin line pattern using this resin - Google Patents

X-ray sensitive resin and formation of ultrathin line pattern using this resin

Info

Publication number
JPS57138634A
JPS57138634A JP56023157A JP2315781A JPS57138634A JP S57138634 A JPS57138634 A JP S57138634A JP 56023157 A JP56023157 A JP 56023157A JP 2315781 A JP2315781 A JP 2315781A JP S57138634 A JPS57138634 A JP S57138634A
Authority
JP
Japan
Prior art keywords
resin
ray
sensitive resin
line pattern
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56023157A
Other languages
Japanese (ja)
Inventor
Takanori Kaizuka
Yoshihisa Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56023157A priority Critical patent/JPS57138634A/en
Publication of JPS57138634A publication Critical patent/JPS57138634A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists

Abstract

PURPOSE:To obtain an X-ray-sensitive resin capable of forming an ultrathin line pattern without operational trouble, by adding a specified fluorescent substance to said resin. CONSTITUTION:A fluorescent substance, such as BaSiO5:Pb phoshor for absorbing irradiated X-ray and emitting ultraviolet ray is used. Said phosphor is mixed with an ultraviolet sensitive resin, such as polyvinyl cinnamate in an amount of 1-5wt% to form an X-ray-sensitive resin.
JP56023157A 1981-02-20 1981-02-20 X-ray sensitive resin and formation of ultrathin line pattern using this resin Pending JPS57138634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56023157A JPS57138634A (en) 1981-02-20 1981-02-20 X-ray sensitive resin and formation of ultrathin line pattern using this resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56023157A JPS57138634A (en) 1981-02-20 1981-02-20 X-ray sensitive resin and formation of ultrathin line pattern using this resin

Publications (1)

Publication Number Publication Date
JPS57138634A true JPS57138634A (en) 1982-08-27

Family

ID=12102758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56023157A Pending JPS57138634A (en) 1981-02-20 1981-02-20 X-ray sensitive resin and formation of ultrathin line pattern using this resin

Country Status (1)

Country Link
JP (1) JPS57138634A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208724A (en) * 1983-05-06 1984-11-27 アメリカン・テレフオン・アンド・テレグラフ・カムパニ− Method of producing device
EP1193553A2 (en) * 2000-09-27 2002-04-03 Mitsubishi Denki Kabushiki Kaisha Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure
JP2014087686A (en) * 2008-03-11 2014-05-15 Immunolight Llc Plasmonic assisted system and method for interior energy-activation from exterior source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837126A (en) * 1971-09-09 1973-06-01
JPS5283062A (en) * 1975-12-30 1977-07-11 Fujitsu Ltd Photoetching method
JPH064148A (en) * 1992-06-23 1994-01-14 Kubota Corp Hot/cold water mixing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837126A (en) * 1971-09-09 1973-06-01
JPS5283062A (en) * 1975-12-30 1977-07-11 Fujitsu Ltd Photoetching method
JPH064148A (en) * 1992-06-23 1994-01-14 Kubota Corp Hot/cold water mixing device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208724A (en) * 1983-05-06 1984-11-27 アメリカン・テレフオン・アンド・テレグラフ・カムパニ− Method of producing device
EP1193553A2 (en) * 2000-09-27 2002-04-03 Mitsubishi Denki Kabushiki Kaisha Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure
EP1193553A3 (en) * 2000-09-27 2004-12-29 Mitsubishi Denki Kabushiki Kaisha Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure
US10201796B2 (en) 2007-04-08 2019-02-12 Immunolight, Llc. Plasmonic assisted systems and methods for interior energy-activation from an exterior source
US10213763B2 (en) 2007-04-08 2019-02-26 Immunolight, Llc. Plasmonic assisted systems and methods for interior energy-activation from an exterior source
US9498643B2 (en) 2007-04-08 2016-11-22 Immunolight, Llc Systems and methods for interior energy-activation from an exterior source
US9579523B2 (en) 2007-04-08 2017-02-28 Immunolight, Llc Plasmonic assisted systems and methods for interior energy-activation from an exterior source
US9630022B2 (en) 2007-04-08 2017-04-25 Immunolight, Llc. Plasmonic assisted systems and methods for interior energy-activation from an exterior source
US9682250B2 (en) 2007-04-08 2017-06-20 Immunolight, Llc Systems and methods for interior energy-activation from an exterior source
US10029117B2 (en) 2007-04-08 2018-07-24 Immunolight, Llc Systems and methods for interior energy-activation from an exterior source
JP2017136591A (en) * 2008-03-11 2017-08-10 イミュノライト・エルエルシー Plasmonic assisted systems and methods for interior energy-activation from exterior radiation source
JP2014087686A (en) * 2008-03-11 2014-05-15 Immunolight Llc Plasmonic assisted system and method for interior energy-activation from exterior source
JP2019104012A (en) * 2008-03-11 2019-06-27 イミュノライト・エルエルシー Plasmonic assisted systems and methods for interior energy-activation from exterior radiation source
US10363541B2 (en) 2008-03-11 2019-07-30 Immunolight, Llc. Systems and methods for interior energy-activation from an exterior source
US10682624B2 (en) 2008-03-11 2020-06-16 Immunolight, Llc Plasmonic assisted systems and methods for interior energy-activation from an exterior source
US10717062B2 (en) 2008-03-11 2020-07-21 Immunolight, Llc Plasmonic assisted systems and methods for interior energy-activation from an exterior source
US11173467B2 (en) 2008-03-11 2021-11-16 Immunolight, Llc Systems and methods for interior energy-activation from an exterior source
US11278861B2 (en) 2008-03-11 2022-03-22 Immunolight, Llc Plasmonic assisted systems and methods for interior energy-activation from an exterior source

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