JPS5726438A - Etching measuring apparatus - Google Patents

Etching measuring apparatus

Info

Publication number
JPS5726438A
JPS5726438A JP9995780A JP9995780A JPS5726438A JP S5726438 A JPS5726438 A JP S5726438A JP 9995780 A JP9995780 A JP 9995780A JP 9995780 A JP9995780 A JP 9995780A JP S5726438 A JPS5726438 A JP S5726438A
Authority
JP
Japan
Prior art keywords
light
etching
chamber
etched
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9995780A
Other languages
Japanese (ja)
Inventor
Toru Otsubo
Susumu Aiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9995780A priority Critical patent/JPS5726438A/en
Publication of JPS5726438A publication Critical patent/JPS5726438A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To accurately measure the etching state even if the rate of the etching area is small by collecting light in a direction perpendicular to the etching surface and enabling to collect the light only at the objective part efficiently via a lens and a slit. CONSTITUTION:An object 3 to be etched is placed on a high frequency electrode 1, etching gas is supplied from a source 13, is then evacuated via a tube 14 to maintain a chamber 2 under the prescribed pressure, a glow discharge is generated in the chamber, and the object is etched. A reaction product is excited by ions and electrons in the glow discharge and emits a light of specific spectrum. Since the gas pressure in the etching chamber is in the range of viscous flow, the light at the position several mm. above the object 3 exhibits the etching state of the surface. This light is condensed via a lens 5, is effectively collected via a slit 6 at the image of the light emitting range 11, and the light collecting region is accurately limited. It is received via a monochrometer 7 on a photomultiplier 8, and when the variation is recorded by a pen recorder 10, the etching state can be measured.
JP9995780A 1980-07-23 1980-07-23 Etching measuring apparatus Pending JPS5726438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9995780A JPS5726438A (en) 1980-07-23 1980-07-23 Etching measuring apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9995780A JPS5726438A (en) 1980-07-23 1980-07-23 Etching measuring apparatus

Publications (1)

Publication Number Publication Date
JPS5726438A true JPS5726438A (en) 1982-02-12

Family

ID=14261163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9995780A Pending JPS5726438A (en) 1980-07-23 1980-07-23 Etching measuring apparatus

Country Status (1)

Country Link
JP (1) JPS5726438A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
US4609426A (en) * 1984-05-23 1986-09-02 Hitachi, Ltd. Method and apparatus for monitoring etching
JPH01227440A (en) * 1988-03-08 1989-09-11 Hitachi Ltd Plasma treatment device
US5223914A (en) * 1989-04-28 1993-06-29 International Business Machines Corporation Follow-up system for etch process monitoring

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
US4609426A (en) * 1984-05-23 1986-09-02 Hitachi, Ltd. Method and apparatus for monitoring etching
JPH01227440A (en) * 1988-03-08 1989-09-11 Hitachi Ltd Plasma treatment device
US5223914A (en) * 1989-04-28 1993-06-29 International Business Machines Corporation Follow-up system for etch process monitoring

Similar Documents

Publication Publication Date Title
US4245154A (en) Apparatus for treatment with gas plasma
US6225633B1 (en) Photo-ionization detector for volatile gas measurement and a method for self-cleaning the same
US6791692B2 (en) Method and device utilizing plasma source for real-time gas sampling
US6757061B2 (en) Method and device utilizing real-time gas sampling
KR19980042293A (en) End point detection method and apparatus thereof for plasma processing
US4902631A (en) Monitoring the fabrication of semiconductor devices by photon induced electron emission
JPS5726438A (en) Etching measuring apparatus
GB1326051A (en) Elemental analyzing apparatus
US3996010A (en) Breathing gas analyzer
US3011390A (en) Optical linear condensation nuclei device
CN211238175U (en) End point detection device and end point detection system
JPS5647572A (en) Etching method of indium oxide film
JP2906752B2 (en) Dry etching method
JPS55118637A (en) Plasma etching apparatus
KR920000675B1 (en) Flasma treatment ending point decision method ant its device
JPH0261140B2 (en)
KR950010713A (en) End point detection method and apparatus of plasma treatment
Healy et al. Hydrogen counter for analysis of dilute tritium oxide
JPS599874B2 (en) Low speed electronic measuring device
US2463544A (en) Mass spectrometry
JPS61133387A (en) Etching device
JPS5864384A (en) Detection for end point of etching
SU121965A1 (en) Mass spectrometer
JPS55149004A (en) Measuring method and measuring apparatus of film thickness
JPS57161643A (en) Measuring device for work function