KR830008404A - 광반응 특성을 지니는 비결정 게르마늄 합금을 제조하는 방법과 장치 - Google Patents

광반응 특성을 지니는 비결정 게르마늄 합금을 제조하는 방법과 장치 Download PDF

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KR830008404A
KR830008404A KR1019810003326A KR810003326A KR830008404A KR 830008404 A KR830008404 A KR 830008404A KR 1019810003326 A KR1019810003326 A KR 1019810003326A KR 810003326 A KR810003326 A KR 810003326A KR 830008404 A KR830008404 A KR 830008404A
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alloy
component
photoreaction
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오브신스키 스탠포드
이주 마사추구
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오브신스키 스탠포드
에너지 컨버션 디바이시즈, 인코포레이티드
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Abstract

내용 없음

Description

광반응 특성을 지니는 비결정 게르마늄 합금을 제조하는 방법과 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 활성화수소를 이전에 석출된 비결정 합금속에 확산하는 실시하는 장치를 도시하는 도면
제6도는 본 발명의 방법에 의해서 제조된 비정질 반도체 광수입 합금의 한 실시를 도시하도록 쇼트키 장벽 태양전지의 실시예의 부분 단면도.
제7도는 본 발명의 방법에 의해서 제조된 도우핑 비결정 반도체 합금을 지니는 p-n 접합 태양 전지 장치의 부분 단면도.
제8도는 본 발명의 방법에 의해서 제조된 비결정 반도체 합금을 지니는 광검출장치의 부분 단면도.
제9도는 본 발명의 방법에 의하여 제조된 비결정 반도체 합금을 지니는 제로스식 드럼의 부분 단면도.
제10도는 p-i-n 접합 태양전지 장치의 부분 단면도.
제11도는 n-i-p 접합 태양전지 장치의 부분 단면도.
제12도는 비결정 합금을 석출하는 플라즈마 활성 증기 석출장치와 이와 결합되는 본 발명의 조절 요소부를 도시하는 도면.

Claims (35)

  1. 적어도 실리콘을 지니는 재료를 기질위에 석출시키고 적어도 하나의 밀도의 상태 감소 성분을 상기 재료에 결합시키는 방법에 있어서, 특수한 광반응 파장기능을 위해 조절되는 밴드 간격을 지니는 합금을 생성시키도록 밴드 간격속의 상태를 증가시키지 않고 적어도 하나의 밴드 간격 조절성분을 상기 재료속에 주입시키는 것을 특징으로 하는 개선된 광반응 비결정 합금을 제조하는 방법.
  2. 상기 조절 성분이 게르마늄인 것을 특징으로 하는 1항의 방법.
  3. 상기 합금이 적어도 SiF4, H2및 GeH4의 혼합물로부터 글로우 방전 석출되는 것을 특징으로 하는 1항의 방법.
  4. 상기 혼합물이 1퍼센트 이상의 GeH4를 지니는 3항의 방법.
  5. 상기 SiF4및 H2의 혼합물이 4대 1내지 10대 1의 비율을 지니는 4항의 방법.
  6. 상기 합금이 활성 광반응 영역을 지니며 석출되고 상기 조절 성분이 적어도 상기 영역속에 주입되는 1항 내지 5항의 어느 것의 방법.
  7. 상기 재료속에 수소인 제2밀도의 상태 감소성분을 주입시키는 것을 특징으로 하는 1항 내지 6항중 어느 것의 방법.
  8. 상기의 2개의 밀도의 상태 감소성분이 상기 밴드 간격 조절 성분과 함께 동시에 상기 석출 합금속에 결합되는 것을 특징으로 하는 7항의 방법.
  9. 상기 감소성분이 석출후에 상기 합금속에 결합되는 것을 특징으로 하는 1항 내지 9항중 어느 것의 방법.
  10. 상기 조절성분이 불연속층의 상기 합금속에 주입되는 것을 특징으로 하는 1항 내지 9항중 하나의 방법.
  11. 상기 조절성분이 변화된 양으로 상기 합금속에 주입되는 것을 특징으로 하는 1항 내지 9항중 어느 것의 방법.
  12. 상기 조절성분이 상기 합금속으로 주입되기 전에 증발시키는 것을 특징으로 하는 1항 내지 11항중 어느 것의 방법.
  13. 상기 조절성분이 상기 합금속에 주입될때 플라즈마 활성화되는 것을 특징으로 하는 1항 내지 12항중 어느 것의 방법.
  14. 상기 조절성분을 플라즈마 활성 증기 석출에 의해서 활성화되는 것을 특징으로 하는 13항의 방법.
  15. 상기 합금이 1항 내지 14항의 방법중 어느 것에 따라 제조되는 것을 특징으로 하는 비결정 합금.
  16. 실리콘을 지니고 적어도 하나의 밀도의 상태 감소성분을 결합시키며 사이성분이 불소인 합금에 있어서, 간격속의 상태를 증가시키지 않고 밴드간격 조절성분을 지니며, 특수한 광반응 파장 기능을 위해서 조절된 밴드 간격을 지니는 합금(146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220).
  17. 상기 조절성분이 게르마늄인 것을 특징으로 하는 16항의 합금.
  18. 상기 합금이 활성 광반응 영역(150, 170, 172, 180, 186, 194, 208, 216) 을 지니며 상기 조절 성분이 적어도 상기 영역을 지니는 것을 특징으로 하는 16항 또는 17항의 합금.
  19. 제2의 밀도의 상태 감소성분이 수소인 것을 특징으로 하는 16항 내지 18항중어느 것의 합금.
  20. 상기 합금이 글로우 방전 석출에 의해서 석출되는 것을 특징으로 하는 16항 내지19항중 어느 것의 합금.
  21. 상기 조절성분이 불연속층 속에 석출되는 것을 특징으로 하는 16항 내지 20항중 어느 것의 합금.
  22. 상기 조절성분이 변화하는 양으로 함유되는 것을 특징으로 하는 16항 내지 21항중 어느 것의 합금.
  23. 전하 반송파를 발생시키기 위해 방사능이 층돌하는 밴드 간격을 지니는 활서 광반응 영역을 지니는 비결정 반도체 합금 몸체를 지니는 여러기지 재료의 적재층을 지니고 상기 비결정 합금이 적어도 하나의 밀도의 상태 감소성분을 지니며 상기 성분이 불소인 개선된 광반응 장치에 있어서, 간격속의 상태를 즐가시키지 않고 방사능 흡수를 증진시키도록 적어도 상기 광반응 영역(150,170,172,180,186,194,208,216)속의 밴드간격 조절성분을 지니고 상기 합금의 밴드간격이 특수한 광반응 파장기능을 위하여 조절되는 것을 특징으로 하는 합금(146, 168, 180, 194, 206, 2.8, 210, 214, 216, 218,220).
  24. 상기 광반응 영역의 밴드 간격이 1.6aV이하인 것을 특징으로 하는 23항의 장치.
  25. 상기 조절성분이 게르마늄인 것을 특징으로 하는 23항 또는 24항의 장치.
  26. 제2도의 밀도의 상태 감소성분이 수소인 것을 특징으로 하는 23항 내지 25항 중 어느 것의 장치.
  27. 상기 합금 몸체(146, 168, 180, 194, 206, 2.8, 210, 214, 216, 218,220)가 글로우 방전석출에 의해서 석출되는 23항 내지 26항중 어느 것의 장치.
  28. 상기 합금 몸체가 불연속층 속에 상기의 조절성분을 지니는 것을 특징으로 하는 23항 내지 27항중 어느 것의 장치.
  29. 상기 합금 몸체가 변화되는 양으로 상기 조절성분을 지니는 23항 내지 28항중 어느 것의 장치.
  30. 상기 합금 몸체가 쇼트키 장벽 태양 전지(142)의 일부를 형성하는 것을 특징으로 하는 23항 내지 25항중 어느 것의 장치.
  31. 상기 합금 몸체가 MIS 태양전지(142)의 일부를 형성하는 것을 특징으로 하는 29항 내지 31항중 어느 것의 장치.
  32. 상기 합금 몸체가 p-n접합장치(164,118,166)의 일부를 형성하는 것을 특징으로 하는 23항 내지 25항중 것의 장치.
  33. 상기 합금 몸체가 p-i-n장치(198,212)의 일부를 옇성하는 것을 특징으로 하는 23항 내지 29항중 어느 것의 장치.
  34. 상기 합금 몸체가 광검출기(178)의 일부를 형성하는 것을 특징으로 하는 23항 내지 29항중 어느 것의 장치.
  35. 상기 합금 몸체가 정전기상 발생장치(192)의 일부를 형성하는 23항 내지 29항중 어느 것의 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019810003326A 1980-09-09 1981-09-07 광응답 비정질 합금을 최적화하는 방법 및 디바이스 KR860002031B1 (ko)

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US06/185,520 US4342044A (en) 1978-03-08 1980-09-09 Method for optimizing photoresponsive amorphous alloys and devices
US185520 1980-09-09

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