ES8304612A1 - Metodo para preparar una aleacion amorfa fotosensible mejo- rada - Google Patents
Metodo para preparar una aleacion amorfa fotosensible mejo- radaInfo
- Publication number
- ES8304612A1 ES8304612A1 ES505266A ES505266A ES8304612A1 ES 8304612 A1 ES8304612 A1 ES 8304612A1 ES 505266 A ES505266 A ES 505266A ES 505266 A ES505266 A ES 505266A ES 8304612 A1 ES8304612 A1 ES 8304612A1
- Authority
- ES
- Spain
- Prior art keywords
- devices
- alloys
- adjusting
- adjusting element
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 title abstract 10
- 229910045601 alloy Inorganic materials 0.000 title abstract 10
- 229910052731 fluorine Inorganic materials 0.000 abstract 4
- 239000011737 fluorine Substances 0.000 abstract 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1604—Amorphous materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
METODO PARA PREPARAR UNA ALEACION AMORFA FOTOSENSIBLE DE UN MATERIAL QUE INCLUYE SILICIO Y QUE INCORPORA POR LO MENOS UN ELEMENTO REDUCTOR DE DENSIDAD DE ESTADOS, SIENDO DICHO ELEMENTO EL FLUOR. COMPRENDE LAS SIGUIENTES OPERACIONES: PRIMERA, SE DEPOSITA SOBRE UN SUSTRATO, MEDIANTE DEPOSICION A VACIO, UN MATERIAL QUE INCLUYE POR LO MENOS SILICIO Y QUE INCORPORA POR LO MENOS UN ELEMENTO REDUCTOR DE LA DENSIDAD DE ESTADOS, SIENDO DICHO ELEMENTO EL FLUOR; SEGUNDA, AL CITADO MATERIAL SE LE AÑADE POR LO MENOS UN ELEMENTO DE AJUSTE DE INTERVALO DE BANDA; Y POR ULTIMO, LA REACCION DE LA COMPOSICION FORMADA QUE CONTIENE SILICIO, PROVOCADA POR LA DEPOSICION A VACIO, ES CONTROLADA HASTA LA OBTENCION DE LA ALEACION BUSCADA. DE APLICACION EN DISPOSITIVOS FOTORRECEPTORES, EN MEDIOS FOTOCONDUCTORES Y EN DISPOSITIVOS FOTODETECTORES.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8304612A1 true ES8304612A1 (es) | 1983-02-01 |
ES505266A0 ES505266A0 (es) | 1983-02-01 |
Family
ID=22681321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES505266A Granted ES505266A0 (es) | 1980-09-09 | 1981-09-07 | Metodo para preparar una aleacion amorfa fotosensible mejo- rada |
Country Status (18)
Country | Link |
---|---|
US (1) | US4342044A (es) |
JP (5) | JPS5779672A (es) |
KR (1) | KR860002031B1 (es) |
AU (1) | AU541974B2 (es) |
BR (1) | BR8105745A (es) |
CA (1) | CA1192818A (es) |
DE (1) | DE3135393C2 (es) |
ES (1) | ES505266A0 (es) |
FR (1) | FR2490016B1 (es) |
GB (1) | GB2083702B (es) |
IE (1) | IE52205B1 (es) |
IL (1) | IL63752A (es) |
IN (1) | IN157589B (es) |
IT (1) | IT1195053B (es) |
NL (1) | NL190256C (es) |
PH (2) | PH19596A (es) |
SE (1) | SE455553B (es) |
ZA (5) | ZA815983B (es) |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4492810A (en) * | 1978-03-08 | 1985-01-08 | Sovonics Solar Systems | Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices |
IL61678A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
US4522663A (en) * | 1980-09-09 | 1985-06-11 | Sovonics Solar Systems | Method for optimizing photoresponsive amorphous alloys and devices |
DE3135411C2 (de) * | 1980-09-09 | 1994-07-07 | Energy Conversion Devices Inc | Fotoempfindliche Anordnung mit übereinanderliegenden pin-Schichten eines amorphen Siliciumlegierungsmaterials |
SE451353B (sv) * | 1980-09-09 | 1987-09-28 | Energy Conversion Devices Inc | Fotokensligt, amorft flercellsdon |
GB2086135B (en) * | 1980-09-30 | 1985-08-21 | Nippon Telegraph & Telephone | Electrode and semiconductor device provided with the electrode |
JPS5772370A (en) * | 1980-10-23 | 1982-05-06 | Canon Inc | Photoelectric converter |
US4499557A (en) * | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
US4891074A (en) * | 1980-11-13 | 1990-01-02 | Energy Conversion Devices, Inc. | Multiple cell photoresponsive amorphous alloys and devices |
US4441113A (en) * | 1981-02-13 | 1984-04-03 | Energy Conversion Devices, Inc. | P-Type semiconductor material having a wide band gap |
JPS57160123A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Semiconductor device |
US4523214A (en) * | 1981-07-03 | 1985-06-11 | Fuji Photo Film Co., Ltd. | Solid state image pickup device utilizing microcrystalline and amorphous silicon |
US4407710A (en) * | 1981-10-15 | 1983-10-04 | Exxon Research And Engineering Co. | Hybrid method of making an amorphous silicon P-I-N semiconductor device |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
JPS58128778A (ja) * | 1982-01-28 | 1983-08-01 | Seiko Epson Corp | 半導体装置 |
JPS58192044A (ja) * | 1982-05-06 | 1983-11-09 | Konishiroku Photo Ind Co Ltd | 感光体 |
JPS5954276A (ja) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | 光起電力装置 |
JPS5955077A (ja) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | 光起電力装置 |
JPS5954274A (ja) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | 光起電力装置 |
US4520039A (en) * | 1982-09-23 | 1985-05-28 | Sovonics Solar Systems | Compositionally varied materials and method for synthesizing the materials |
JPS5961078A (ja) * | 1982-09-29 | 1984-04-07 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
US4490733A (en) * | 1982-10-15 | 1984-12-25 | Sperry Corporation | Josephson device with tunneling barrier having low density of localized states and enhanced figures of merit |
NL8204056A (nl) * | 1982-10-21 | 1984-05-16 | Oce Nederland Bv | Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen. |
JPH0588390A (ja) * | 1982-11-01 | 1993-04-09 | Kanegafuchi Chem Ind Co Ltd | 感光体用半導体素子 |
JPH077843B2 (ja) * | 1982-11-01 | 1995-01-30 | 鐘淵化学工業株式会社 | アモルフアス多元系半導体素子 |
JPS5983916A (ja) * | 1982-11-01 | 1984-05-15 | Kanegafuchi Chem Ind Co Ltd | アモルフアス多元系半導体 |
JPS5990959A (ja) * | 1982-11-16 | 1984-05-25 | Sanyo Electric Co Ltd | アモルフアスシリコン電界効果型トランジスタ |
JPH0644638B2 (ja) * | 1982-12-29 | 1994-06-08 | 圭弘 濱川 | 異質単位セル同士のスタック形光起電力素子 |
GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
DE3308269A1 (de) * | 1983-03-09 | 1984-09-13 | Licentia Patent-Verwaltungs-Gmbh | Solarzelle |
US4471155A (en) * | 1983-04-15 | 1984-09-11 | Energy Conversion Devices, Inc. | Narrow band gap photovoltaic devices with enhanced open circuit voltage |
JPH0614553B2 (ja) * | 1983-04-26 | 1994-02-23 | 日本電装株式会社 | アモルファス炭化シリコン系半導体およびその製造方法 |
FR2545275B1 (fr) * | 1983-04-27 | 1987-03-06 | Rca Corp | Photodetecteur tandem |
JPS59204274A (ja) * | 1983-05-06 | 1984-11-19 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
US4532198A (en) * | 1983-05-09 | 1985-07-30 | Canon Kabushiki Kaisha | Photoconductive member |
ES8602301A1 (es) * | 1983-07-18 | 1985-11-01 | Energy Conversion Devices Inc | Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas |
JPS6046079A (ja) * | 1983-08-23 | 1985-03-12 | Daihen Corp | 光起電力素子の製造方法 |
JPS6046078A (ja) * | 1983-08-23 | 1985-03-12 | Daihen Corp | 光起電力素子及びその製造方法 |
US4569697A (en) * | 1983-08-26 | 1986-02-11 | Energy Conversion Devices, Inc. | Method of forming photovoltaic quality amorphous alloys by passivating defect states |
JPH0658970B2 (ja) * | 1983-08-31 | 1994-08-03 | 工業技術院長 | 半導体装置 |
JPS6062166A (ja) * | 1983-09-14 | 1985-04-10 | Kanegafuchi Chem Ind Co Ltd | 光導電材料 |
US4860069A (en) * | 1983-09-24 | 1989-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-cry stal semiconductor light emitting device |
US4598164A (en) * | 1983-10-06 | 1986-07-01 | Exxon Research And Engineering Co. | Solar cell made from amorphous superlattice material |
JPS60107872A (ja) * | 1983-11-16 | 1985-06-13 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
JPS60152971A (ja) * | 1984-01-20 | 1985-08-12 | Fuji Electric Corp Res & Dev Ltd | 半導体放射線検出器 |
JPS60214572A (ja) * | 1984-04-11 | 1985-10-26 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池およびその製造方法 |
US4547621A (en) * | 1984-06-25 | 1985-10-15 | Sovonics Solar Systems | Stable photovoltaic devices and method of producing same |
JPS61133676A (ja) * | 1984-12-03 | 1986-06-20 | Showa Alum Corp | a−Si太陽電池用基板 |
US4603471A (en) * | 1984-09-06 | 1986-08-05 | Fairchild Semiconductor Corporation | Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions |
US4728998A (en) * | 1984-09-06 | 1988-03-01 | Fairchild Semiconductor Corporation | CMOS circuit having a reduced tendency to latch |
US4849315A (en) * | 1985-01-21 | 1989-07-18 | Xerox Corporation | Processes for restoring hydrogenated and halogenated amorphous silicon imaging members |
JPS61232685A (ja) * | 1985-04-09 | 1986-10-16 | Agency Of Ind Science & Technol | アモルフアスシリコン太陽電池およびその製造方法 |
JPH0624238B2 (ja) * | 1985-04-16 | 1994-03-30 | キヤノン株式会社 | フォトセンサアレイの製造方法 |
JPS62111477A (ja) * | 1985-11-09 | 1987-05-22 | Agency Of Ind Science & Technol | アモルフアスシリコン太陽電池 |
GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
US4725889A (en) * | 1986-07-15 | 1988-02-16 | Ovonic Imaging Systems, Inc. | Photosensitive line imager utilizing a movable scanning arm |
JPS6384075A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |
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1980
- 1980-09-09 US US06/185,520 patent/US4342044A/en not_active Expired - Lifetime
-
1981
- 1981-08-28 ZA ZA815983A patent/ZA815983B/xx unknown
- 1981-08-28 ZA ZA815985A patent/ZA815985B/xx unknown
- 1981-08-28 ZA ZA815982A patent/ZA815982B/xx unknown
- 1981-08-28 ZA ZA815986A patent/ZA815986B/xx unknown
- 1981-08-28 ZA ZA815984A patent/ZA815984B/xx unknown
- 1981-09-07 NL NLAANVRAGE8104137,A patent/NL190256C/xx not_active IP Right Cessation
- 1981-09-07 JP JP56140834A patent/JPS5779672A/ja active Pending
- 1981-09-07 IN IN1001/CAL/81A patent/IN157589B/en unknown
- 1981-09-07 ES ES505266A patent/ES505266A0/es active Granted
- 1981-09-07 JP JP56140835A patent/JPS5779673A/ja active Pending
- 1981-09-07 KR KR1019810003326A patent/KR860002031B1/ko active
- 1981-09-07 IE IE2061/81A patent/IE52205B1/en not_active IP Right Cessation
- 1981-09-07 IL IL63752A patent/IL63752A/xx not_active IP Right Cessation
- 1981-09-07 GB GB8126965A patent/GB2083702B/en not_active Expired
- 1981-09-07 JP JP56140836A patent/JPS5779674A/ja active Granted
- 1981-09-07 SE SE8105275A patent/SE455553B/sv not_active IP Right Cessation
- 1981-09-07 JP JP56140831A patent/JPS5778184A/ja active Pending
- 1981-09-07 PH PH26164A patent/PH19596A/en unknown
- 1981-09-07 DE DE3135393A patent/DE3135393C2/de not_active Expired
- 1981-09-07 JP JP56140830A patent/JPS5778183A/ja active Pending
- 1981-09-07 IT IT23826/81A patent/IT1195053B/it active
- 1981-09-07 FR FR8116954A patent/FR2490016B1/fr not_active Expired
- 1981-09-08 BR BR8105745A patent/BR8105745A/pt not_active IP Right Cessation
- 1981-09-08 AU AU75017/81A patent/AU541974B2/en not_active Expired
- 1981-09-08 CA CA000385391A patent/CA1192818A/en not_active Expired
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1984
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