KR20220132673A - 반도체 디바이스 제작에서의 주석 옥사이드 막들 - Google Patents

반도체 디바이스 제작에서의 주석 옥사이드 막들 Download PDF

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KR20220132673A
KR20220132673A KR1020227032676A KR20227032676A KR20220132673A KR 20220132673 A KR20220132673 A KR 20220132673A KR 1020227032676 A KR1020227032676 A KR 1020227032676A KR 20227032676 A KR20227032676 A KR 20227032676A KR 20220132673 A KR20220132673 A KR 20220132673A
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South Korea
Prior art keywords
substrate
tin oxide
layer
plasma
etching
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KR1020227032676A
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Korean (ko)
Inventor
정이 유
사만다 탄
유 지앙
후이-정 우
리처드 와이즈
양 판
네이더 샴마
보리스 볼로스키
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램 리써치 코포레이션
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Priority to KR1020247002427A priority Critical patent/KR102829108B1/ko
Publication of KR20220132673A publication Critical patent/KR20220132673A/ko
Abandoned legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
KR1020227032676A 2017-02-17 2018-02-13 반도체 디바이스 제작에서의 주석 옥사이드 막들 Abandoned KR20220132673A (ko)

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