JP7427155B2 - 別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング - Google Patents
別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング Download PDFInfo
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- JP7427155B2 JP7427155B2 JP2022506570A JP2022506570A JP7427155B2 JP 7427155 B2 JP7427155 B2 JP 7427155B2 JP 2022506570 A JP2022506570 A JP 2022506570A JP 2022506570 A JP2022506570 A JP 2022506570A JP 7427155 B2 JP7427155 B2 JP 7427155B2
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- 239000000463 material Substances 0.000 title claims description 194
- 239000010936 titanium Substances 0.000 title claims description 94
- 229910052719 titanium Inorganic materials 0.000 title claims description 86
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims description 82
- 238000001020 plasma etching Methods 0.000 title claims description 14
- 229910052751 metal Inorganic materials 0.000 title description 5
- 239000002184 metal Substances 0.000 title description 5
- 239000003989 dielectric material Substances 0.000 title description 4
- 150000002739 metals Chemical class 0.000 title description 4
- 238000000034 method Methods 0.000 claims description 217
- 230000008569 process Effects 0.000 claims description 163
- 238000005530 etching Methods 0.000 claims description 133
- 239000007789 gas Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 96
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 23
- 229910052721 tungsten Inorganic materials 0.000 claims description 23
- 239000010937 tungsten Substances 0.000 claims description 23
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052736 halogen Inorganic materials 0.000 claims description 16
- 150000002367 halogens Chemical class 0.000 claims description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 14
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000000859 sublimation Methods 0.000 claims description 10
- 230000008022 sublimation Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
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- 239000012808 vapor phase Substances 0.000 claims description 8
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
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- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 3
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims description 3
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- 230000001276 controlling effect Effects 0.000 description 7
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- 229910052786 argon Inorganic materials 0.000 description 3
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- 150000003254 radicals Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
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- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- AQZYBQIAUSKCCS-UHFFFAOYSA-N perfluorotripentylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AQZYBQIAUSKCCS-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01J2237/32—Processing objects by plasma generation
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- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
本出願は、2019年8月23日に出願された「NON-PLASMA ETCH OF TITANIUM-CONTAINING MATERIAL LAYERS WITH TUNABLE SELECTIVITY TO ALTERNATE METALS AND DIELECTRICS」と題する米国仮特許出願第62/891,115号の優先権を主張し、その全体が参照として本明細書に組み込まれる。
Claims (21)
- チタン含有材料層及び少なくとも1つの追加の材料層を含む露出した材料層を有する基板をプロセスチャンバ内に収容することと、
ハロゲン含有ガスを含む制御された環境に前記基板を曝すことにより、前記チタン含有材料層と比較して前記少なくとも1つの追加の材料層を選択性エッチングすることと、
前記選択性エッチングの後、第2の制御された環境で非選択性エッチングを実行することであって、前記非選択性エッチングでは、前記少なくとも1つの追加の材料層及び前記チタン含有材料層の両方がエッチングされる、ことと、を含み、
前記選択性エッチングは前記非選択性エッチングの少なくとも一部よりも低い温度で実行され、前記少なくとも1つの追加材料層はタングステン含有層を含む、エッチングの方法。 - 前記選択性エッチングは、気相エッチング又はリモートプラズマエッチングのうちの少なくとも1つを使用する、請求項1に記載の方法。
- 前記チタン含有材料層はチタン又は窒化チタンを含む、請求項1に記載の方法。
- 前記少なくとも1つの追加の材料層は、タングステン、酸化タングステン、酸化ハフニウム、酸化ケイ素、ケイ素-ゲルマニウム、ケイ素、窒化ケイ素、又は酸化アルミニウムのうちの少なくとも1つを含む、請求項1に記載の方法。
- 前記選択性エッチング中の前記プロセスチャンバに関するプロセスパラメータを制御して目標エッチングパラメータを実現することを更に含む、請求項1に記載の方法。
- 前記選択性エッチング中の前記プロセスチャンバ内の温度を制御して、摂氏35度~摂氏150度の温度範囲にすることを更に含む、請求項1に記載の方法。
- 前記ハロゲン含有ガスは、三フッ化塩素、フッ素、又は三フッ化窒素を含む、請求項1に記載の方法。
- 前記基板を第2のプロセスチャンバ内に収容し、前記第2のプロセスチャンバ内に前記第2の制御された環境を形成することを更に含む、請求項1に記載の方法。
- 前記プロセスチャンバ内のプロセスパラメータを調整することにより、前記プロセスチャンバ内に前記第2の制御された環境を形成することを更に含む、請求項1に記載の方法。
- チタン含有材料層及びタングステン含有材料層を含む露出した材料層を有する基板をプロセスチャンバ内に収容することと、
ハロゲン含有ガスを含む制御された環境に前記基板を曝すことにより、前記チタン含有材料層と比較して前記タングステン含有材料層を選択性エッチングすることと、
前記タングステン含有材料層の選択性エッチングの後、昇華を行って前記チタン含有材料層の一部を除去することと、
を含むエッチングの方法。 - 前記チタン含有材料層はチタン又は窒化チタンを含み、前記タングステン含有材料層はタングステン又は酸化タングステンを含む、請求項10に記載の方法。
- 前記選択性エッチング中の前記プロセスチャンバ内の温度を制御して摂氏100度未満にすることを更に含み、前記ハロゲン含有ガスはフッ素ベースのガスを含む、請求項10に記載の方法。
- 前記昇華は、前記プロセスチャンバ内の温度を増加させて、摂氏100度を超える温度、又は摂氏80度~摂氏150度の温度範囲にすることを含む、請求項10に記載の方法。
- 前記チタン含有材料層の前記昇華は、前記基板上に露出された前記タングステン含有材料層もエッチングする、請求項10に記載の方法。
- 前記選択性エッチングは、前記少なくとも1つの追加材料層と反応する前記ハロゲン含有ガスによって行われ、前記少なくとも1つの追加材料層を除去し、
前記非選択性エッチングは昇華によって行われる、
請求項1に記載の方法。 - 前記昇華は、前記選択性エッチングよりも高い温度の窒素環境で行われる、
請求項15に記載の方法。 - チタン含有材料層及び少なくとも1つの追加の材料層を含む露出した材料層を有する基板をプロセスチャンバ内に収容することと、
ハロゲン含有ガスを含む第1の制御された環境に前記基板を曝すことにより、前記チタン含有材料層と比較して前記少なくとも1つの追加の材料層を選択性エッチングすることと、
前記選択性エッチングの後、第2の制御された環境で非選択性エッチングを実行することであって、前記非選択性エッチングでは、前記少なくとも1つの追加の材料層及び前記チタン含有材料層の両方がエッチングされる、ことと、
を含み、
前記選択性エッチングは、非プラズマ環境で行われ、
前記非選択性エッチングは不活性ガス環境で行われ、前記非選択性エッチングの前に吸着されたプロセスガスが前記チタン含有材料層及び他の材料層のうちの少なくとも一つを活性化し、前記非選択性エッチングで温度が上昇すると、前記チタン含有材料層及び前記他の材料層のうちの一部が昇華によって除去される、
エッチングの方法。 - 前記選択性エッチングは、気相エッチング又はリモートプラズマエッチングのうちの少なくとも1つで行われ、
前記昇華は、前記選択性エッチングよりも高い温度の窒素環境で行われる、
請求項10に記載の方法。 - 前記昇華中に、前記タングステン含有材料層及び前記チタン含有材料層の両方が非選択性エッチングで除去される、
請求項18に記載の方法。 - 前記選択性エッチング中に、前記チタン含有材料層の一部をガス吸着によって活性化して活性化部分を提供し、前記活性化部分を昇華中に除去する、
請求項18に記載の方法。 - 前記非選択性エッチングは、前記選択性エッチングよりも高い温度で実行される、
請求項17に記載の方法。
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PCT/US2020/031666 WO2021040823A1 (en) | 2019-08-23 | 2020-05-06 | Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics |
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JP2018006715A (ja) | 2016-07-08 | 2018-01-11 | 関東化學株式会社 | エッチング液組成物およびエッチング方法 |
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