KR20160134667A - 산소 플라즈마 에칭용 레지스트 재료, 레지스트막 및 그것을 사용한 적층체 - Google Patents

산소 플라즈마 에칭용 레지스트 재료, 레지스트막 및 그것을 사용한 적층체 Download PDF

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KR20160134667A
KR20160134667A KR1020167025006A KR20167025006A KR20160134667A KR 20160134667 A KR20160134667 A KR 20160134667A KR 1020167025006 A KR1020167025006 A KR 1020167025006A KR 20167025006 A KR20167025006 A KR 20167025006A KR 20160134667 A KR20160134667 A KR 20160134667A
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South Korea
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group
meth
acrylate
film
resist
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KR1020167025006A
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English (en)
Korean (ko)
Inventor
나오토 야기
다케시 이베
히사시 다니모토
마코토 야다
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디아이씨 가부시끼가이샤
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Publication of KR20160134667A publication Critical patent/KR20160134667A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/442—Block-or graft-polymers containing polysiloxane sequences containing vinyl polymer sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G81/00—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers
    • C08G81/02—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C08G81/024—Block or graft polymers containing sequences of polymers of C08C or C08F and of polymers of C08G
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/10—Block or graft copolymers containing polysiloxane sequences
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020167025006A 2014-03-14 2015-03-12 산소 플라즈마 에칭용 레지스트 재료, 레지스트막 및 그것을 사용한 적층체 KR20160134667A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014051740 2014-03-14
JPJP-P-2014-051740 2014-03-14
PCT/JP2015/057282 WO2015137438A1 (ja) 2014-03-14 2015-03-12 酸素プラズマエッチング用レジスト材料、レジスト膜、及びそれを用いた積層体

Publications (1)

Publication Number Publication Date
KR20160134667A true KR20160134667A (ko) 2016-11-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167025006A KR20160134667A (ko) 2014-03-14 2015-03-12 산소 플라즈마 에칭용 레지스트 재료, 레지스트막 및 그것을 사용한 적층체

Country Status (5)

Country Link
JP (1) JP5871203B1 (zh)
KR (1) KR20160134667A (zh)
CN (1) CN106104753A (zh)
TW (1) TW201540782A (zh)
WO (1) WO2015137438A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI630458B (zh) 2015-12-14 2018-07-21 奇美實業股份有限公司 感光性樹脂組成物、保護膜以及液晶顯示元件
WO2017169459A1 (ja) * 2016-04-01 2017-10-05 株式会社カネカ 複合樹脂の製造方法
US10509313B2 (en) * 2016-06-28 2019-12-17 Canon Kabushiki Kaisha Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography
US11360387B2 (en) * 2017-08-04 2022-06-14 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
JP6903146B2 (ja) 2017-09-27 2021-07-14 富士フイルム株式会社 インプリント用硬化性組成物、硬化物パターンの製造方法、回路基板の製造方法および硬化物
US11415880B2 (en) * 2018-05-09 2022-08-16 Facebook Technologies, Llc Nanoimprint lithography material with switchable mechanical properties
JP7398550B2 (ja) 2019-08-21 2023-12-14 インテグリス・インコーポレーテッド 高度に選択的な窒化ケイ素エッチングのための改良された配合物
US20240004294A1 (en) * 2020-10-07 2024-01-04 Dai Nippon Printing Co., Ltd. Curable resin composition for silicon-containing resist, pattern forming method, method for producing imprint mold, and method for producing semiconductor device
WO2022168804A1 (ja) * 2021-02-05 2022-08-11 東亞合成株式会社 無機物質層積層用アンダーコート剤組成物、その硬化物及びその製造方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2003100609A (ja) 2001-09-26 2003-04-04 Japan Science & Technology Corp Ｓｏｇを用いた室温ナノ−インプリント−リソグラフィー
JP2011213921A (ja) 2010-03-31 2011-10-27 Jsr Corp シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法
JP2013131762A (ja) 2007-11-07 2013-07-04 Showa Denko Kk 転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法

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EP1857479B1 (en) * 2005-03-08 2011-10-19 DIC Corporation Ultraviolet-curable resin composition, ultraviolet-curable coating material, and coated article
CN101855598B (zh) * 2007-11-13 2012-08-08 株式会社Adeka 正型感光性组合物、正型永久抗蚀膜及正型永久抗蚀膜的制造方法
JP4656264B2 (ja) * 2009-05-29 2011-03-23 Ｄｉｃ株式会社 表面処理された基材、それを使用した太陽電池用受光面側保護シート、及び太陽電池モジュール
JP4985879B2 (ja) * 2010-06-08 2012-07-25 Ｄｉｃ株式会社 表面に微細な凹凸を有する成形体及びその製造方法
JP5035651B2 (ja) * 2010-07-12 2012-09-26 Ｄｉｃ株式会社 無機微粒子用分散剤、それを使用した無機微粒子分散体
WO2012111656A1 (ja) * 2011-02-15 2012-08-23 Dic株式会社 ナノインプリント用硬化性組成物、ナノインプリント成形体及びパターン形成方法
JP5983151B2 (ja) * 2011-07-29 2016-08-31 Dic株式会社 ドライエッチングレジスト材料、レジスト膜及びパターン形成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100609A (ja) 2001-09-26 2003-04-04 Japan Science & Technology Corp Ｓｏｇを用いた室温ナノ−インプリント−リソグラフィー
JP2013131762A (ja) 2007-11-07 2013-07-04 Showa Denko Kk 転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法
JP2011213921A (ja) 2010-03-31 2011-10-27 Jsr Corp シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法

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Publication number Publication date
WO2015137438A1 (ja) 2015-09-17
JP5871203B1 (ja) 2016-03-01
TW201540782A (zh) 2015-11-01
CN106104753A (zh) 2016-11-09
JPWO2015137438A1 (ja) 2017-04-06

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