KR20140026278A - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents
반도체 장치 및 반도체 장치의 제조 방법 Download PDFInfo
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- KR20140026278A KR20140026278A KR1020130099326A KR20130099326A KR20140026278A KR 20140026278 A KR20140026278 A KR 20140026278A KR 1020130099326 A KR1020130099326 A KR 1020130099326A KR 20130099326 A KR20130099326 A KR 20130099326A KR 20140026278 A KR20140026278 A KR 20140026278A
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- Prior art keywords
- layer
- oxide semiconductor
- semiconductor layer
- transistor
- gate insulating
- Prior art date
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2012-185332 | 2012-08-24 | ||
JP2012185332A JP6013084B2 (ja) | 2012-08-24 | 2012-08-24 | 半導体装置及び半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
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KR20140026278A true KR20140026278A (ko) | 2014-03-05 |
Family
ID=50147202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020130099326A KR20140026278A (ko) | 2012-08-24 | 2013-08-21 | 반도체 장치 및 반도체 장치의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (3) | US9082643B2 (ja) |
JP (1) | JP6013084B2 (ja) |
KR (1) | KR20140026278A (ja) |
CN (1) | CN103632921B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2884542A3 (en) * | 2013-12-10 | 2015-09-02 | IMEC vzw | Integrated circuit device with power gating switch in back end of line |
TWI656631B (zh) * | 2014-03-28 | 2019-04-11 | 日商半導體能源研究所股份有限公司 | 攝像裝置 |
KR102582740B1 (ko) | 2014-05-30 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
CN104617132B (zh) * | 2014-12-31 | 2017-05-10 | 深圳市华星光电技术有限公司 | 低温多晶硅薄膜晶体管及其制造方法 |
TWI577032B (zh) * | 2015-04-24 | 2017-04-01 | 群創光電股份有限公司 | 顯示裝置 |
US10644123B2 (en) | 2016-09-30 | 2020-05-05 | Intel Corporation | Systems, methods, and apparatuses for implementing a high mobility low contact resistance semiconducting oxide in metal contact vias for thin film transistors |
US10770286B2 (en) * | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10943953B2 (en) | 2017-08-31 | 2021-03-09 | Micron Technology, Inc. | Semiconductor devices, hybrid transistors, and related methods |
EP3676877A4 (en) | 2017-08-31 | 2021-09-01 | Micron Technology, Inc. | SEMICONDUCTOR COMPONENTS, TRANSISTORS AND ASSOCIATED METHODS FOR CONTACTING METAL OXIDE SEMICONDUCTOR COMPONENTS |
US10541361B2 (en) * | 2017-11-30 | 2020-01-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic random access memory and manufacturing method thereof |
KR102451538B1 (ko) | 2017-12-05 | 2022-10-07 | 삼성디스플레이 주식회사 | 표시 패널 및 그 제조 방법 |
US11017146B2 (en) * | 2018-07-16 | 2021-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of forming the same |
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JP3025385B2 (ja) * | 1993-01-21 | 2000-03-27 | シャープ株式会社 | 半導体装置 |
JP2000049352A (ja) * | 1998-07-28 | 2000-02-18 | Asahi Kasei Microsystems Kk | 半導体装置及びその製造方法 |
JP4979154B2 (ja) * | 2000-06-07 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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-
2012
- 2012-08-24 JP JP2012185332A patent/JP6013084B2/ja not_active Expired - Fee Related
-
2013
- 2013-08-21 KR KR1020130099326A patent/KR20140026278A/ko not_active Application Discontinuation
- 2013-08-21 US US13/972,804 patent/US9082643B2/en active Active
- 2013-08-23 CN CN201310379457.3A patent/CN103632921B/zh not_active Expired - Fee Related
-
2015
- 2015-05-12 US US14/710,111 patent/US9230865B2/en not_active Expired - Fee Related
- 2015-11-24 US US14/950,267 patent/US20160148845A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP6013084B2 (ja) | 2016-10-25 |
CN103632921B (zh) | 2017-05-24 |
US9230865B2 (en) | 2016-01-05 |
US20140054584A1 (en) | 2014-02-27 |
CN103632921A (zh) | 2014-03-12 |
US20150243562A1 (en) | 2015-08-27 |
US9082643B2 (en) | 2015-07-14 |
JP2014045009A (ja) | 2014-03-13 |
US20160148845A1 (en) | 2016-05-26 |
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