KR20120089542A - 사용자 단말의 자원 관리를 수행하는 서비스 브로커 장치 및 그 방법 - Google Patents

사용자 단말의 자원 관리를 수행하는 서비스 브로커 장치 및 그 방법 Download PDF

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Publication number
KR20120089542A
KR20120089542A KR20110037503A KR20110037503A KR20120089542A KR 20120089542 A KR20120089542 A KR 20120089542A KR 20110037503 A KR20110037503 A KR 20110037503A KR 20110037503 A KR20110037503 A KR 20110037503A KR 20120089542 A KR20120089542 A KR 20120089542A
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South Korea
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resource management
user terminal
management server
user
resource
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KR20110037503A
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Korean (ko)
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정상진
남기혁
신명기
김형준
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한국전자통신연구원
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07552—Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
KR20110037503A 2010-12-13 2011-04-21 사용자 단말의 자원 관리를 수행하는 서비스 브로커 장치 및 그 방법 Withdrawn KR20120089542A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45952710P 2010-12-13 2010-12-13
KR1020100127187 2010-12-13
US13/034,519 US8587101B2 (en) 2010-12-13 2011-02-24 Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections

Publications (1)

Publication Number Publication Date
KR20120089542A true KR20120089542A (ko) 2012-08-13

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR20110037503A Withdrawn KR20120089542A (ko) 2010-12-13 2011-04-21 사용자 단말의 자원 관리를 수행하는 서비스 브로커 장치 및 그 방법
KR1020110044073A Active KR101281660B1 (ko) 2010-12-13 2011-05-11 전기적 상호접속을 위해 리드프레임을 이용한 멀티-칩 모듈(ｍｃｍ) 리드없는 전력 쿼드 플랫 반도체 패키지
KR1020130064141A Active KR101372900B1 (ko) 2010-12-13 2013-06-04 전기적 상호접속을 위해 리드프레임을 이용한 멀티-칩 모듈(ｍｃｍ) 리드없는 전력 쿼드 플랫 반도체 패키지

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020110044073A Active KR101281660B1 (ko) 2010-12-13 2011-05-11 전기적 상호접속을 위해 리드프레임을 이용한 멀티-칩 모듈(ｍｃｍ) 리드없는 전력 쿼드 플랫 반도체 패키지
KR1020130064141A Active KR101372900B1 (ko) 2010-12-13 2013-06-04 전기적 상호접속을 위해 리드프레임을 이용한 멀티-칩 모듈(ｍｃｍ) 리드없는 전력 쿼드 플랫 반도체 패키지

Country Status (5)

Country Link
US (4) US8587101B2 (https=)
EP (1) EP2463904B1 (https=)
JP (2) JP2012129489A (https=)
KR (3) KR20120089542A (https=)
CN (1) CN102569241B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190060087A (ko) * 2017-11-24 2019-06-03 주식회사 케이티 데이터 트래픽 분석을 통한 자원 할당 방법 및 그 장치

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
US9659845B2 (en) * 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US9362215B2 (en) 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9324646B2 (en) 2010-12-13 2016-04-26 Infineon Technologies America Corp. Open source power quad flat no-lead (PQFN) package
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9717146B2 (en) 2012-05-22 2017-07-25 Intersil Americas LLC Circuit module such as a high-density lead frame array (HDA) power module, and method of making same
US9698143B2 (en) 2012-09-07 2017-07-04 Fairchild Semiconductor Corporation Wireless module with active devices
JP2014090006A (ja) * 2012-10-29 2014-05-15 Mitsubishi Electric Corp パワーモジュール
KR102071078B1 (ko) * 2012-12-06 2020-01-30 매그나칩 반도체 유한회사 멀티 칩 패키지
US9202811B2 (en) * 2012-12-18 2015-12-01 Infineon Technologies Americas Corp. Cascode circuit integration of group III-N and group IV devices
JP2014143271A (ja) * 2013-01-23 2014-08-07 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
US9379048B2 (en) * 2013-02-28 2016-06-28 Semiconductor Components Industries, Llc Dual-flag stacked die package
EP2775520B1 (en) * 2013-03-07 2021-05-05 Infineon Technologies Americas Corp. Open source Power Quad Flat No-Lead (PQFN) leadframe
EP2775519A3 (en) * 2013-03-07 2017-11-15 International Rectifier Corporation Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
EP2775521A3 (en) * 2013-03-07 2017-12-13 International Rectifier Corporation Power Quad Flat No-Lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
EP2775518A3 (en) * 2013-03-07 2017-11-08 International Rectifier Corporation Power Quad Flat No-Lead (PQFN) package in a single shunt inverter circuit
TWI538138B (zh) * 2013-03-12 2016-06-11 國際整流器股份有限公司 在功率四邊扁平無引線（ｐｑｆｎ）之引線框上的控制及驅動器電路
TWI557863B (zh) * 2013-03-12 2016-11-11 國際整流器股份有限公司 具有控制及驅動器電路的功率四邊扁平無引線（ｐｑｆｎ）之封裝
EP2779227A3 (en) * 2013-03-13 2017-11-22 International Rectifier Corporation Semiconductor package having multi-phase power inverter with internal temperature sensor
JP5921491B2 (ja) * 2013-06-13 2016-05-24 三菱電機株式会社 電力用半導体装置
US9147664B2 (en) * 2013-10-11 2015-09-29 Mediatek Inc. Semiconductor package
CN104681526B (zh) * 2013-11-28 2017-07-04 无锡华润华晶微电子有限公司 一种用于可调光led恒流驱动电路的封装结构
JP6261309B2 (ja) 2013-12-02 2018-01-17 三菱電機株式会社 パワーモジュール
US9536800B2 (en) 2013-12-07 2017-01-03 Fairchild Semiconductor Corporation Packaged semiconductor devices and methods of manufacturing
CN110654958B (zh) 2014-03-06 2021-03-23 奥的斯电梯公司 纤维增强的电梯带及制造方法
KR101555301B1 (ko) * 2014-05-13 2015-09-23 페어차일드코리아반도체 주식회사 반도체 패키지
WO2016094718A1 (en) * 2014-12-10 2016-06-16 Texas Instruments Incorporated Power field-effect transistor (fet), pre-driver, controller, and sense resistor integration
CN105118818B (zh) 2015-07-20 2018-08-21 东南大学 一种方形扁平无引脚封装结构的功率模块
TWI657554B (zh) * 2015-09-30 2019-04-21 Delta Electronics, Inc. 封裝結構
EP3555914B1 (en) * 2016-12-16 2021-02-03 ABB Schweiz AG Power semiconductor module with low gate path inductance
US10396774B2 (en) 2017-09-14 2019-08-27 Hestia Power Inc. Intelligent power module operable to be driven by negative gate voltage
TWI640151B (zh) * 2017-09-20 2018-11-01 瀚薪科技股份有限公司 Negative voltage gate driven smart power module
US10714411B2 (en) 2018-03-15 2020-07-14 Globalfoundries Inc. Interconnected integrated circuit (IC) chip structure and packaging and method of forming same
US10742217B2 (en) 2018-04-12 2020-08-11 Apple Inc. Systems and methods for implementing a scalable system
CN112005372B (zh) 2018-04-19 2023-09-22 罗姆股份有限公司 半导体装置
US10840164B2 (en) * 2018-05-18 2020-11-17 Infineon Technologies Ag Wire bonded package with single piece exposed heat slug and leads
EP3703123B1 (en) 2019-02-27 2024-08-14 Infineon Technologies Austria AG Semiconductor component and semiconductor package
TWI693682B (zh) * 2019-08-28 2020-05-11 財團法人工業技術研究院 電子元件封裝結構
US11145609B2 (en) 2019-12-05 2021-10-12 Nxp Usa, Inc. Doherty amplifier with surface-mount packaged carrier and peaking amplifiers
JP7268637B2 (ja) * 2020-05-11 2023-05-08 三菱電機株式会社 半導体パッケージ
EP3975225A1 (en) 2020-09-24 2022-03-30 Infineon Technologies Austria AG Semiconductor module
EP3982404A1 (en) 2020-10-07 2022-04-13 Infineon Technologies Austria AG Semiconductor module
JP2022143167A (ja) * 2021-03-17 2022-10-03 ローム株式会社 半導体装置

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3384399B2 (ja) 1995-06-28 2003-03-10 富士電機株式会社 高耐圧ｉｃの高耐圧レベルシフト回路
JP3130239B2 (ja) 1995-08-02 2001-01-31 松下電子工業株式会社 樹脂封止型半導体装置およびその製造方法
JP3394377B2 (ja) 1996-01-09 2003-04-07 三菱電機株式会社 半導体装置および半導体モジュール
JP3337224B2 (ja) * 1996-11-28 2002-10-21 三菱電機株式会社 半導体装置
JP3431467B2 (ja) 1997-09-17 2003-07-28 株式会社東芝 高耐圧半導体装置
JP3674333B2 (ja) * 1998-09-11 2005-07-20 株式会社日立製作所 パワー半導体モジュール並びにそれを用いた電動機駆動システム
US6249024B1 (en) * 1998-12-09 2001-06-19 International Rectifier Corp. Power module with repositioned positive and reduced inductance and capacitance
US6137165A (en) 1999-06-25 2000-10-24 International Rectifier Corp. Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
JP2001135765A (ja) 1999-11-05 2001-05-18 Hitachi Cable Ltd 複合リードフレームの製造方法および製造装置
JP3813775B2 (ja) 1999-11-05 2006-08-23 ローム株式会社 マルチチップモジュール
US6465875B2 (en) 2000-03-27 2002-10-15 International Rectifier Corporation Semiconductor device package with plural pad lead frame
JP2002217416A (ja) 2001-01-16 2002-08-02 Hitachi Ltd 半導体装置
JP4286465B2 (ja) 2001-02-09 2009-07-01 三菱電機株式会社 半導体装置とその製造方法
DE10107386C1 (de) 2001-02-16 2002-08-22 Infineon Technologies Ag Schaltungsanordnung mit Temperaturschutz und Verfahren
JP4450530B2 (ja) 2001-07-03 2010-04-14 三菱電機株式会社 インバータモジュール
US20030107120A1 (en) * 2001-12-11 2003-06-12 International Rectifier Corporation Intelligent motor drive module with injection molded package
KR100833934B1 (ko) 2002-01-24 2008-05-30 삼성테크윈 주식회사 다층도금 리드프레임 및 이 리드프레임의 제조방법
JP4127014B2 (ja) 2002-10-23 2008-07-30 株式会社豊田自動織機 電流検出装置および電流検出機能付きインバータ装置
US20040227476A1 (en) * 2002-12-19 2004-11-18 International Rectifier Corp. Flexible inverter power module for motor drives
US7215012B2 (en) * 2003-01-03 2007-05-08 Gem Services, Inc. Space-efficient package for laterally conducting device
JP4044861B2 (ja) 2003-04-03 2008-02-06 三菱電機株式会社 電力変換装置およびその電力変換装置を備える電力変換システム装置
JP4115882B2 (ja) 2003-05-14 2008-07-09 株式会社ルネサステクノロジ 半導体装置
KR100536898B1 (ko) 2003-09-04 2005-12-16 삼성전자주식회사 반도체 소자의 와이어 본딩 방법
JP4004460B2 (ja) 2003-12-16 2007-11-07 三菱電機株式会社 半導体装置
JP2005217072A (ja) 2004-01-28 2005-08-11 Renesas Technology Corp 半導体装置
JP4489485B2 (ja) 2004-03-31 2010-06-23 株式会社ルネサステクノロジ 半導体装置
JP4565879B2 (ja) 2004-04-19 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置
AU2005249993B2 (en) 2004-05-27 2009-06-18 Siemens Industry, Inc. System and method for cooling the power electronics of a mining machine
US7298027B2 (en) 2004-09-02 2007-11-20 International Rectifier Corporation SMT three phase inverter package and lead frame
JP4426955B2 (ja) * 2004-11-30 2010-03-03 株式会社ルネサステクノロジ 半導体装置
JP4624170B2 (ja) * 2005-04-25 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101321361B1 (ko) 2005-09-05 2013-10-22 페어차일드코리아반도체 주식회사 모터구동용 인버터 모듈 및 이를 구비한 모터구동장치와인버터 집적회로 패키지
JP2007082036A (ja) 2005-09-16 2007-03-29 Rohm Co Ltd 半導体集積回路装置、電源装置、電気機器
JP2007082365A (ja) 2005-09-16 2007-03-29 Rohm Co Ltd 温度保護回路、電源装置、電子機器
TWI288801B (en) 2005-11-23 2007-10-21 Delta Electronics Inc Fan system and temperature-sensing protecting device thereof
US7943431B2 (en) 2005-12-02 2011-05-17 Unisem (Mauritius) Holdings Limited Leadless semiconductor package and method of manufacture
JP5291864B2 (ja) 2006-02-21 2013-09-18 ルネサスエレクトロニクス株式会社 Ｄｃ／ｄｃコンバータ用半導体装置の製造方法およびｄｃ／ｄｃコンバータ用半導体装置
JP4875380B2 (ja) 2006-02-24 2012-02-15 ルネサスエレクトロニクス株式会社 半導体装置
DE102006012781B4 (de) 2006-03-17 2016-06-16 Infineon Technologies Ag Multichip-Modul mit verbessertem Systemträger und Verfahren zu seiner Herstellung
JP4916745B2 (ja) * 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101340966B1 (ko) 2006-05-24 2013-12-13 페어차일드코리아반도체 주식회사 3상 인버터 모듈 및 이를 이용한 모터구동장치와 인버터집적회로 패키지
JP2008034567A (ja) 2006-07-27 2008-02-14 Fujitsu Ltd 半導体装置及びその製造方法
US7830104B2 (en) 2006-09-19 2010-11-09 Seiko Epson Corporation Brushless motor
JP2008160933A (ja) 2006-12-21 2008-07-10 Sharp Corp チョッパレギュレータ回路
DE102007013186B4 (de) 2007-03-15 2020-07-02 Infineon Technologies Ag Halbleitermodul mit Halbleiterchips und Verfahren zur Herstellung desselben
US8427235B2 (en) * 2007-04-13 2013-04-23 Advanced Analogic Technologies, Inc. Power-MOSFETs with improved efficiency for multi-channel class-D audio amplifiers and packaging thereof
JP4973359B2 (ja) 2007-07-23 2012-07-11 富士電機株式会社 半導体装置
US7732917B2 (en) 2007-10-02 2010-06-08 Rohm Co., Ltd. Power module
US20090189261A1 (en) 2008-01-25 2009-07-30 Lay Yeap Lim Ultra-Thin Semiconductor Package
TWI347737B (en) 2008-02-27 2011-08-21 Prolific Technology Inc Method and pwm system of adjusting the width of pulses through collecting information of a three-phase current
US20090261462A1 (en) * 2008-04-16 2009-10-22 Jocel Gomez Semiconductor package with stacked die assembly
JP5107839B2 (ja) * 2008-09-10 2012-12-26 ルネサスエレクトロニクス株式会社 半導体装置
JP4620151B2 (ja) 2008-12-12 2011-01-26 東光株式会社 非接触電力伝送回路
JP5284077B2 (ja) 2008-12-26 2013-09-11 株式会社日立製作所 半導体装置ならびにそれを用いた電力変換装置
US20100301464A1 (en) 2009-05-26 2010-12-02 Mohamad Ashraf Bin Mohd Arshad Asterisk pad
JP2011029262A (ja) 2009-07-22 2011-02-10 Daikin Industries Ltd 電力変換装置
US8362598B2 (en) 2009-08-26 2013-01-29 Amkor Technology Inc Semiconductor device with electromagnetic interference shielding
US8456794B2 (en) 2009-11-12 2013-06-04 Infineon Technologies Ag Clock-pulsed safety switch
CN101814480B (zh) 2010-04-16 2011-08-31 杭州矽力杰半导体技术有限公司 一种芯片封装结构及其封装方法
US20120126378A1 (en) 2010-11-24 2012-05-24 Unisem (Mauritius ) Holdings Limited Semiconductor device package with electromagnetic shielding
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9324646B2 (en) 2010-12-13 2016-04-26 Infineon Technologies America Corp. Open source power quad flat no-lead (PQFN) package
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
US9362215B2 (en) 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US8803499B2 (en) 2011-02-23 2014-08-12 International Recifier Corporation Power supply circuitry and adaptive transient control
JP2012175070A (ja) 2011-02-24 2012-09-10 Panasonic Corp 半導体パッケージ
CN102184917B (zh) 2011-03-25 2013-04-03 锐迪科创微电子（北京）有限公司 采用四方扁平无引脚封装的gsm射频发射前端模块
JP5757145B2 (ja) 2011-04-19 2015-07-29 富士電機株式会社 半導体装置
JP5805513B2 (ja) 2011-12-14 2015-11-04 三菱電機株式会社 電力用半導体装置
JP2014099547A (ja) 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
US20140272094A1 (en) 2013-03-12 2014-09-18 Advanced Food Systems, Inc. Textured vegetable protein as a meat substitute and method and composition for making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190060087A (ko) * 2017-11-24 2019-06-03 주식회사 케이티 데이터 트래픽 분석을 통한 자원 할당 방법 및 그 장치

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