KR20120032024A - 감방사선성 수지 조성물 - Google Patents

감방사선성 수지 조성물 Download PDF

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Publication number
KR20120032024A
KR20120032024A KR1020127003205A KR20127003205A KR20120032024A KR 20120032024 A KR20120032024 A KR 20120032024A KR 1020127003205 A KR1020127003205 A KR 1020127003205A KR 20127003205 A KR20127003205 A KR 20127003205A KR 20120032024 A KR20120032024 A KR 20120032024A
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KR
South Korea
Prior art keywords
group
formula
carbon atoms
pattern
resin composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127003205A
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English (en)
Korean (ko)
Inventor
아츠시 나카무라
즈토무 시모카와
준이치 다카하시
다카요시 아베
도모키 나가이
도모히로 가키자와
Original Assignee
제이에스알 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시끼가이샤 filed Critical 제이에스알 가부시끼가이샤
Publication of KR20120032024A publication Critical patent/KR20120032024A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020127003205A 2007-05-23 2008-05-21 감방사선성 수지 조성물 Ceased KR20120032024A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007136669 2007-05-23
JPJP-P-2007-136669 2007-05-23
JPJP-P-2007-246847 2007-09-25
JP2007246847 2007-09-25

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020097025687A Division KR101597366B1 (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물

Publications (1)

Publication Number Publication Date
KR20120032024A true KR20120032024A (ko) 2012-04-04

Family

ID=40031995

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020127003205A Ceased KR20120032024A (ko) 2007-05-23 2008-05-21 감방사선성 수지 조성물
KR1020147015408A Ceased KR20140095541A (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
KR1020097025687A Expired - Fee Related KR101597366B1 (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020147015408A Ceased KR20140095541A (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
KR1020097025687A Expired - Fee Related KR101597366B1 (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물

Country Status (5)

Country Link
US (3) US8211624B2 (https=)
JP (3) JPWO2008143301A1 (https=)
KR (3) KR20120032024A (https=)
TW (2) TW200905399A (https=)
WO (1) WO2008143301A1 (https=)

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JP5251985B2 (ja) * 2008-09-19 2013-07-31 Ｊｓｒ株式会社 レジストパターンコーティング剤及びレジストパターン形成方法
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KR101729350B1 (ko) 2009-06-16 2017-04-21 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JP5698923B2 (ja) * 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 自己整合型スペーサー多重パターニング方法
TWI474378B (zh) * 2009-06-26 2015-02-21 羅門哈斯電子材料有限公司 形成電子裝置的方法
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CN104698745B (zh) * 2015-02-11 2019-04-12 广州中国科学院先进技术研究所 一种尺寸可控制的纳米块制作方法
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Also Published As

Publication number Publication date
US20100190104A1 (en) 2010-07-29
JPWO2008143301A1 (ja) 2010-08-12
TW201300943A (zh) 2013-01-01
KR101597366B1 (ko) 2016-02-24
TWI476518B (zh) 2015-03-11
US20120156621A1 (en) 2012-06-21
US8211624B2 (en) 2012-07-03
KR20100017727A (ko) 2010-02-16
US20140363773A1 (en) 2014-12-11
WO2008143301A1 (ja) 2008-11-27
JP2015062072A (ja) 2015-04-02
JP2012108529A (ja) 2012-06-07
TW200905399A (en) 2009-02-01
KR20140095541A (ko) 2014-08-01

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