WO2008143301A1 - パターン形成方法及びそれに用いる樹脂組成物 - Google Patents

パターン形成方法及びそれに用いる樹脂組成物 Download PDF

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Publication number
WO2008143301A1
WO2008143301A1 PCT/JP2008/059386 JP2008059386W WO2008143301A1 WO 2008143301 A1 WO2008143301 A1 WO 2008143301A1 JP 2008059386 W JP2008059386 W JP 2008059386W WO 2008143301 A1 WO2008143301 A1 WO 2008143301A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
resin composition
coating
developing
pattern formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059386
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Atsushi Nakamura
Tsutomu Shimokawa
Junichi Takahashi
Takayoshi Abe
Tomoki Nagai
Tomohiro Kakizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to JP2009515265A priority Critical patent/JPWO2008143301A1/ja
Priority to US12/601,011 priority patent/US8211624B2/en
Priority to KR1020147015408A priority patent/KR20140095541A/ko
Publication of WO2008143301A1 publication Critical patent/WO2008143301A1/ja
Anticipated expiration legal-status Critical
Priority to US13/403,036 priority patent/US20120156621A1/en
Priority to US14/465,320 priority patent/US20140363773A1/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
PCT/JP2008/059386 2007-05-23 2008-05-21 パターン形成方法及びそれに用いる樹脂組成物 Ceased WO2008143301A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009515265A JPWO2008143301A1 (ja) 2007-05-23 2008-05-21 パターン形成方法及びそれに用いる樹脂組成物
US12/601,011 US8211624B2 (en) 2007-05-23 2008-05-21 Method for pattern formation and resin composition for use in the method
KR1020147015408A KR20140095541A (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
US13/403,036 US20120156621A1 (en) 2007-05-23 2012-02-23 Radiation-sensitive resin composition
US14/465,320 US20140363773A1 (en) 2007-05-23 2014-08-21 Pattern-forming method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-136669 2007-05-23
JP2007136669 2007-05-23
JP2007246847 2007-09-25
JP2007-246847 2007-09-25

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/601,011 A-371-Of-International US8211624B2 (en) 2007-05-23 2008-05-21 Method for pattern formation and resin composition for use in the method
US13/403,036 Continuation US20120156621A1 (en) 2007-05-23 2012-02-23 Radiation-sensitive resin composition

Publications (1)

Publication Number Publication Date
WO2008143301A1 true WO2008143301A1 (ja) 2008-11-27

Family

ID=40031995

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059386 Ceased WO2008143301A1 (ja) 2007-05-23 2008-05-21 パターン形成方法及びそれに用いる樹脂組成物

Country Status (5)

Country Link
US (3) US8211624B2 (https=)
JP (3) JPWO2008143301A1 (https=)
KR (3) KR20120032024A (https=)
TW (2) TW200905399A (https=)
WO (1) WO2008143301A1 (https=)

Cited By (8)

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Publication number Priority date Publication date Assignee Title
WO2010123101A1 (ja) * 2009-04-24 2010-10-28 Jsr株式会社 感放射線性樹脂組成物
KR20110002797A (ko) * 2009-06-26 2011-01-10 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 전자 디바이스 형성방법
KR20110002796A (ko) * 2009-06-26 2011-01-10 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 자기 정렬 스페이서 다중 패터닝 방법
CN102074462A (zh) * 2009-11-19 2011-05-25 罗门哈斯电子材料有限公司 形成电子器件的方法
US20110123936A1 (en) * 2008-09-19 2011-05-26 Jsr Corporation Resist pattern coating agent and resist pattern-forming method
JP2011215371A (ja) * 2010-03-31 2011-10-27 Toshiba Corp マスクの製造方法
US20130200500A1 (en) * 2006-09-26 2013-08-08 Fujitsu Limited Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same
JP2016048374A (ja) * 2010-03-31 2016-04-07 Jsr株式会社 感放射線性樹脂組成物

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TWI452444B (zh) * 2008-07-14 2014-09-11 Jsr股份有限公司 光阻圖型不溶化樹脂組成物及使用其之光阻圖型形成方法
KR101729350B1 (ko) 2009-06-16 2017-04-21 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
KR20110043466A (ko) * 2009-10-21 2011-04-27 스미또모 가가꾸 가부시키가이샤 포토레지스트 패턴의 제조방법
JP5741589B2 (ja) * 2010-09-08 2015-07-01 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
US20130213894A1 (en) * 2012-02-17 2013-08-22 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
JP5914241B2 (ja) * 2012-08-07 2016-05-11 株式会社ダイセル 高分子化合物の製造方法、高分子化合物、及びフォトレジスト用樹脂組成物
CN102832168A (zh) * 2012-09-11 2012-12-19 上海华力微电子有限公司 一种沟槽优先铜互连制作方法
CN103197513A (zh) * 2013-03-15 2013-07-10 上海华力微电子有限公司 防止光刻胶在湿法刻蚀中产生缺陷的工艺方法
US9360758B2 (en) * 2013-12-06 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device process filter and method
JP6531397B2 (ja) * 2014-03-07 2019-06-19 Jsr株式会社 パターン形成方法及びこれに用いられる組成物
CN104698745B (zh) * 2015-02-11 2019-04-12 广州中国科学院先进技术研究所 一种尺寸可控制的纳米块制作方法
JP2016148777A (ja) * 2015-02-12 2016-08-18 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 下層膜形成用組成物、およびそれを用いた下層膜の形成方法
WO2017065207A1 (ja) * 2015-10-16 2017-04-20 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
TWI696891B (zh) * 2015-12-09 2020-06-21 日商住友化學股份有限公司 光阻組成物及光阻圖案之製造方法
US10691023B2 (en) * 2017-08-24 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for performing lithography process with post treatment
JP7257142B2 (ja) * 2018-12-27 2023-04-13 東京応化工業株式会社 化学増幅型感光性組成物、感光性ドライフィルム、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法

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JPH0471222A (ja) * 1990-07-12 1992-03-05 Oki Electric Ind Co Ltd パターン形成方法
JPH0588375A (ja) * 1991-09-27 1993-04-09 Oki Electric Ind Co Ltd レジストパタンの形成方法
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TWI505046B (zh) * 2008-01-24 2015-10-21 Jsr股份有限公司 光阻圖型之形成方法及微細化光阻圖型之樹脂組成物
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JPH0471222A (ja) * 1990-07-12 1992-03-05 Oki Electric Ind Co Ltd パターン形成方法
JPH0588375A (ja) * 1991-09-27 1993-04-09 Oki Electric Ind Co Ltd レジストパタンの形成方法
JPH07326562A (ja) * 1994-06-01 1995-12-12 Ryoden Semiconductor Syst Eng Kk 微細パターンの形成方法
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US8945822B2 (en) * 2006-09-26 2015-02-03 Fujitsu Limited Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same
US20130200500A1 (en) * 2006-09-26 2013-08-08 Fujitsu Limited Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same
US20110123936A1 (en) * 2008-09-19 2011-05-26 Jsr Corporation Resist pattern coating agent and resist pattern-forming method
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KR101967189B1 (ko) 2009-06-26 2019-04-09 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 자기 정렬 스페이서를 포함하는 기판
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KR101671289B1 (ko) 2009-06-26 2016-11-16 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 전자 장비 형성 방법
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KR20160123272A (ko) * 2009-06-26 2016-10-25 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 자기 정렬 스페이서 다중 패터닝 방법
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JP2011109059A (ja) * 2009-11-19 2011-06-02 Rohm & Haas Electronic Materials Llc 電子デバイスを形成する方法
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JP2016048374A (ja) * 2010-03-31 2016-04-07 Jsr株式会社 感放射線性樹脂組成物
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US8211624B2 (en) 2012-07-03
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US20140363773A1 (en) 2014-12-11
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